Professional Documents
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N11M 120
N11M 120
Step-and-Repeat System
NSR/MCSV Series
Nikon has prepared this manual for use by Nikon personnel and customers as a guide for the
proper operation or maintenance of Nikon equipment and software. The drawings, specifications
and information contained herein are the exclusive property of Nikon. They shall not be used in
whole or part as the basis for manufacture or sale of any equipment or computer programs. Any
copying, use or disclosure of any drawings, specifications or information in this manual must
conform strictly to the licensing agreement between customer and Nikon.
The information in this manual is subject to change without notice. Nikon assumes no
responsibility for any errors that may appear in this manual. Nikon reserves the right to publish
updated versions of this manual or portions hereof, without notice and without obligation to
update, nor to keep current the information contained in this manual.
4/93
N7BR705-501J94h(H)
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Version 1.0 ii
N11MCS-120 • Nikon
The following describes the revised pages that should be in this document. All documents are
originally issued as Version 1.0. Revisions to selected pages within a document are issued as
Version 1.1, 1.2, and so on. Revisions to an entire document are issued as new Versions
(Version 2.0, 3.0, etc.). As an example, the third revision (0.3) to the second version (2.0) of a
document would be Version 2.3.
Nikon uses the Document Revision Status page to keep track of, and to provide you with, the
most recent or updated version of this document.
REVISION DESCRIPTION
DATE
SAFETY INFORMATION
In an effort to protect users from personal harm and to protect the system from damage, Nikon
has adopted the use of warnings, CAUTIONS, and NOTES in all training manuals.
• WARNINGS indicate that personal harm is possible if the warning is not heeded.
• CAUTIONS indicate that the system may be damaged if the caution is not heeded.
• NOTES contain additional support information.
The following is a listing of WARNINGS, CAUTIONS, and NOTES that should be observed
throughout NSR system operation. Additional WARNINGS, CAUTIONS, and NOTES appear in
the text of this manual.
Warning – Mercury arc lamps operate under high pressure and emit
ultraviolet (UV)radiation that is dangerous to the eyes and skin. Always follow
rigid safety precautions when working around mercury arc lamps. Ensure the
lamp housings are in place before the lamp is turned ON. Wear suitable eye and
skin protection to protect yourself from ultraviolet radiation and high intensity light.
Warning – Use EXTREME CAUTION when working around any power supply
areas. High voltage exists throughout the system. Observe standard electrical
safety precautions to avoid personal injury or damage to the equipment.
Warning – DO NOT remove any covers or touch any lead wires to avoid
electrical shock.
Warning – Lasers used in Nikon alignment systems emit radiation that can cause
eye damage. DO NOT stare into the laser beams. All NSRs with Class 3b or
higher laser subsystems must have its work area (i.e., chamber) secured from
any stray laser light emissions at all times. This requirement is in adherence to
nationally recognized standards for the safe use of lasers. To eliminate the
possibility of anyone coming in contact with any laser emission, ensure that the
appropriate laser light covers are properly secured in place whenever a system is
left unattended. When working on any system which is illuminated with a laser,
the proper use of safety eyewear is a requirement.
Version 1.0 iv
N11MCS-120 • Nikon
Warning – Keep hands, hair, tools, and loose clothing away from any moving
parts to avoid personal injury or damage to the equipment.
Warning – Prolonged operation of the keyboard and monitor may cause fatigue.
Frequent short breaks and appropriate seating should be used to reduce fatigue.
CAUTIONS
DO NOT operate the system when temperature specifications have been
exceeded to avoid damage to the system and unreliable performance.
Mercury arc lamps may explode or fail if skin oils or contaminants are
deposited on the lamps. Always wear clean room gloves when handling
mercury arc lamps.
Ensure a high level of cleanliness is maintained at all times for all wafer
handling subassemblies to avoid wafer handling failures. Errors may
occur if there is contamination on the wafer handling subassemblies.
NOTE
There are no operator-serviceable parts on Nikon systems. Please refer any
servicing requirements to qualified service personnel.
Version 1.0 v
N11MCS-120 • Nikon
The Nikon NSR systems are equipped with an Emergency Machine Off (EMO) circuit. This circuit
uses four EMO buttons:
Applying power to the main input power circuit breaker also applies power to the Transformer.
The 24 VAC secondary from the transformer goes to terminal block and out through the EMO
buttons. Power flows through the EMO buttons to the ON/OFF buttons on the NEMA box on the
rear of the system. Pushing the ON button closes relay MC, allowing the Emergency Power
Dropout Contactor to close, applying power to the NSR.
Pressing any of the EMO buttons or the OFF button on the NEMA box opens the 24 VAC circuit,
BREAKER
Emergency Power
Main Input
Dropout Contactor
Power Circuit
U1
From AC 200 V
Facility V1 3ø
To System
W1
Circuit MC
Protection Terminal
Block
Main Body
200/24 V Emergency OFF
Transformer
EMO1
ON OFF
which opens MC and the Emergency Power Dropout Contactor, shutting off power to the NSR.
Figure 1 shows the typical EMO circuit.
Figure 1
EMO Circuit
Version 1.0 vi
N11MCS-120 • Nikon
TABLE OF CONTENTS
SECTION 1 -- OVERVIEW
Version 1.0 ix
N11MCS-120 • Nikon
FIGURES
Version 1.0 x
N11MCS-120 • Nikon
TABLES
Version 1.0 xi
N11MCS-120 • Nikon
SECTION 1
OVERVIEW
The NSR R2205HA and HB Version 7.0 series test reticles can be used for the
NSR-2005G8/i8 series or higher with an exposure area of 21.2 x 21.2 mm or 22 x
22 mm. However, these test reticles are currently used for evaluation and are
supported only for the NSR2205i11 series or Higher. These test reticles can also
be used for Excimer steppers in addition to g-line and i-line steppers.
With test reticles of Version 7.0 or higher, reticle A, which was a single reticle in
previous versions, is divided into two reticles reticles A and B. These two reticles
are switched depending on the types of evaluations required. Version 7.0 series
test reticles are not compatible with Version 6 series test reticles because the
configuration and placement of measurement marks have been changed.
However, for reticle A which evaluates overlay accuracy, the measurement
marks on the wafer are compatible among Version 7 series regardless of the lens
type.
1 Reticle A
Measures overlay accuracy, stepping accuracy, reticle rotation
repeatability accuracy, and moving mirror bow.
2 Reticle B
Measures lens controller accuracy, reticle blind accuracy, and
orthogonality.
3 CD Reticle
Evaluates lens image formation performance (except contact holes.)
4 DIS Reticle (Distortion)
Used for lens distortion measurement, reticle rotation accuracy, and
distortion matching.
5 MF Reticle (Measure Focus)
Automatically measures focus in an exposure area.
NOTES
This manual is for test reticles of R2205HA Version 7 series and R2205HB
Version 7 series, and describes only the information of the patterns placed on
these reticles
Actual usage of the test reticles is not described in this manual. For more details
about how to use the test reticles refer to the NSR Acceptance Test Methods and
Conditions.
Warning – Prolonged operation of the keyboard and monitor may cause fatigue.
Frequent short breaks and appropriate seating should be used to reduce fatigue.
SECTION 2
R2205HA VERSION 7.0 SERIES TEST RETICLE
This section describes the information of the patterns placed on the R2205HA
Version 7.0 series test reticle (called reticle A). Table 2-1 lists the patterns placed
on reticle A.
No. Item
1 Overlay measurement unit
2 Measurement unit for stepping
3 Wafer global alignment mark
4 LIA alignment mark
5 FIA alignment mark
6 FIA two-dimensional alignment mark
7 TTR alignment mark (2 types)
8 Reticle multi-point ISS mark
In addition, alignment marks such as the TTR alignment mark, intra-shot multi-
point measurement mark and FIA two-dimensional mark which are not supported
in Version 6 are included in Version 7.
The overlay measurement unit has a dimension of 1000 µm (vertical) and 1000
µm (horizontal) on a wafer. This unit contains the main scales and subscales of
various measurement patterns. The main scale and subscale are placed (160 µm
160 µm) apart. Thus, an offset of (160 µm, 160 µm) is added to the first pattern
during overlay evaluation.
In addition, standard alignment marks such as LSA (Single, 7 Multi), FIA and LIA
are included in this unit. A resolution chart and a stepping unit may be included in
this unit depending on the input position. For the profiles of the overlay
measurement unit and the stepping unit in the overlay measurement unit, see
Appendix A.1 and A.2.
Reticle A is arranged so that adjacent patterns are not overlaid even if X and Y
coordinates are shifted 2000 µm before exposure.
For profiles of the various measurement marks in the overlay measurement unit,
see Appendix A.3. Table 2-3 lists various measurement mark positions in the
overlay measurement unit.
NOTE
Manual read vernier (+0.5 to -0.5 µm, 0.02 µm reading) is also available.
The figure numbers in the remark field correspond to the figures in Appendix A.
N o. Item X Y Remark
1 LSA X Positive 0 60
2 LSA Y Positive 60 0
3 LSA X Negative 450 380
4 LSA X Negative 310 220
5 LSA Y Negative 380 450
6 LSA Y Negative 220 310
7 LSA X 7 multi Positive 400 -350 Figure A-9
8 LSA X 7 multi Negative 400 -450
9 LSA Y 7 multi Positive -350 400
10 LSA Y 7 multi Negative -450 400
11 LIA X 6 µm pitch 1:1 Positive -240 450 Figure A-10
12 LIA X 6 µm pitch 1:1 Negative -240 -450
13 LIA Y 6 µm pitch 1:1 Positive 450 -240
14 LIA X 6 µm pitch 1:1 Negative -450 -240
15 FIA X 12 µm pitch 9 lines Positive 180 -350 Figure A-11
16 FIA X 12 µm pitch 9 lines Positive 180 -450
17 FIA X 12 µm pitch 9 lines Positive -350 180
18 FIA X 12 µm pitch 9 lines Positive -450 180
NOTE
The figure numbers in the remark field correspond to the figures in Appendix A.
The measurement unit for stepping is placed at the coordinates shown in Table
2-5, and contains patterns within a square area of (20, 20) to (-400, -400) for
input coordinate values. For the profile of the measurement unit for stepping, see
Appendix A.5.
The patterns shown in Table 2-6 are the same as those in the overlay
measurement unit.
The patterns shown in Table 2-7 are the same as those in overlay measurement
unit.
Some of the wafer global alignment marks placed on the test reticle are not
currently supported, but may be supported in the future. For the profile of each
alignment mark, see Appendix A.6. Table 2-8 lists the wafer global alignment
mark positions.
NOTE
The figure numbers in the remark field correspond to the figures in Appendix A.
The alignment marks in the overlay measurement unit can also be used for multi-
point measurement alignment in a wafer. For the coordinates, see Section 2.1,
“Overlay Measurement Unit.” For the profile of each alignment mark, see
Appendix A.6.6. Table 2-9 lists the unit coordinates.
NOTE
X Coordinate Y Coordinate
-10000 10000
10000 10000
0 0
-10000 -10000
10000 -1000
The figure numbers in the remark field correspond to the figures in Appendix A.
NOTE
Arrangement: 6 [µm] pitch 19*19; 8 [µm] pitch 15*15
The figure numbers in the remark field correspond to the figures in Appendix.
For the profiles of the TTR alignment marks, see Appendix A.7.
The alignment mark coordinates (TTR Type mark positions) shown in Table 2-13
indicate the wafer mark coordinates when a wafer is shifted (160 µm, 160 µm)
during the second exposure.
The unit combining reticle and wafer marks is placed at the coordinates shown in
Table 2-14 (TTR Type II mark positions). The alignment mark coordinates shown
in Table 2-14 indicate the wafer mark coordinates when a wafer is shifted (160
µm, 160 µm) during the second exposure.
For the profile of the reticle alignment mark, see Appendix A.8.
The reticle multi-point ISS unit contains twenty 1 -[µm] negative lines arranged on
a wafer, and supports both areas of 21.2 x 21.2 mm and 22 x 22 mm. All units
are arranged with the same lines.
X Coordinate Y coordinate
-5600 13100
5600 13100
-11120 8600
11120 8600
-11120 -8600
X Coordinate Y coordinate
-200 200
200 200
0 0
-200 -200
200 -200
X Coordinate Y coordinate
-200 0
200 0
Alignment may be performed on the NSR-2005EX. Table 2-19 lists the NSR-
2005EX ISS mark positions.
This resolution chart is not used for lens evaluation, but used to determine
exposure conditions and to check a focus shift during exposure. This chart is
placed inside several overlay accuracy evaluation units so that the chart does not
overlay with other patterns if shifted by (160 µm 160 µm).For the profile of the
resolution chart for exposure condition setting, see Appendix A-9. Table 2-20 lists
the coordinates of the resolution chart.
X coordinate Y coordinate
-10250 9700
9750 9700
-250 -300
-10250 -10300
9750 -10300
There are 12 different dimensions for the resolution chart. They are 0.50, 0.45,
0.40, 0.35, 0.32, 0.30, 0.26, 0.26, 0.25, 0.24, 0.22 and 0.20 µm, and the chart
contains negative and positive patterns.
SECTION 3
R2205HB VERSION 7.0 SERIES TEST RETICLE
This section describes the information of the patterns placed on the R2205HB
Version 7.0 series test reticle (called reticle B). Table 3-l lists the patterns placed
on reticle B.
No. Item
1 Lens controller reduction change measurement unit
2 Focus measurement unit
3 Orthogonality measurement unit
4 Wafer global alignment mark
Reticle B is used to evaluate the control accuracy of the lens controller. Since
reticle A is produced not to transmit exposure light, reticle B has been produced
to compensate for reticle A. Reticle B is mainly used for evaluation of relative
values: thus, the original plate is created with an EB drawing unit which was used
to create test reticles of previous versions.
This unit is the same as the stepping accuracy evaluation unit for reticle A,
except placement positions. Table 3-2 lists the lens controller reduction change
measurement unit positions.
Main Sub
Item Item Item Item
X step -10000 8000 10000 8000
X step -10000 4000 10000 4000
X step -10000 0 10000 0
X step -10000 -4000 10000 -4000
X step -10000 -8000 10000 -8000
Y step -8000 -12000 -8000 12000
Y step -4000 -12000 -4000 12000
Y step 0 -12000 0 12000
Y step 4000 -12000 4000 12000
Y step 8000 -12000 8000 12000
Y step -8000 -10000 -8000 10000
Y step -4000 -10000 -4000 10000
Y step 0 -10000 0 10000
Y step 4000 -10000 4000 10000
Y step 8000 -10000 -8000 10000
All measurement marks in the unit have (62.5, -62.5) as the relative position of
the Y scan mark against the X scan mark. In addition, an L & S pattern is
provided to check exposure conditions visually. Table 3-4 lists the measurement
mark positions in the unit.
X scan Y scan
X Y X Y
0.5 µm 0°, 90° -87.5 162.5 -25 100
0.5 µm 45°, 135° -212.5 162.5 -150 100
0.45 µm 0°, 90° 162.5 162.5 225 100
0.45 µm 45°, 135° 37.5 162.5 100 100
0.40 µm 0°, 90° -87.5 37.5 -25 -25
0.40 µm 45°, 135° 212.5 37.5 -150 -25
0.35 µm 0°, 90° 162.5 37.5 225 -25
0.35 µm 45°, 135° 37.5 37.5 100 -25
0.30 µm 0°, 90° 162.5 -87.5 225 -150
0.30 µm 45°, 135° 37.5 -87.5 100 -150
For the profile of the reticle blind setting accuracy evaluation scale, see Appendix
A.1 0. Tables 3-5 and 3-6 list the X scale and Y scale positions, respectively.
X coordinate Y coordinate
±7000 12500
±7000 ±11000
±6000 ±1 0000
±6000 ±8000
±4000 ±6000
±2000 ±3000
±6000 0
±7000 -12700
X coordinate Y coordinate
0 ±9000
±11000 ±7000
±10000 ±6000
±8000 ±6000
±6000 ±4000
±3000 ±2000
The orthogonality measurement unit has the same structure as the measurement
unit for stepping. Tables 3-7 lists the orthogonality measurement unit positions.
The reticle ISS mark consists of twenty 1 -µm negative lines which are arranged
on a wafer, and support both areas of 21.2 x 21.2 mm and 22 x 22 mm. All units
are arranged with the same lines (different from the design drawing).
X coordinate Y coordinate
-5800 13100
5800 13100
-11320 8600
-10920 8600
10920 8600
11320 8600
-11320 -8600
-10920 -8600
10920 -8600
11320 -8600
-5800 -13300
5800 -13300
X coordinate Y coordinate
-5600 13100
5600 13100
-11320 8400
-10920 8400
10920 8400
11320 8400
-11320 -8400
-10920 -8400
10920 -8400
11320 -8400
-5600 -13300
5600 -13300
Alignment may also be performed on the NSR-2005EX. Table 3-14 lists the
NSR-2005EX ISS mark positions.
A total of seven conventional resolution charts are placed at the reticle center
and its vicinity. For the profile of the normal resolution chart, see Appendix A.1 1.
Table 3-l 5 lists the coordinates of the normal resolution chart.
X coordinate Y coordinate
-10000 10000
10000 10000
-10000 1000
2000 1000
10000 1000
-10000 -10000
10000 -10000
A conventional long resolution chart is placed near the reticle center. For the
profile of the long resolution chart, see Appendix A.1 1. Table 3-16 lists the
coordinates of the long resolution chart.
SECTION 4
PROCESS DATA FILES
Process data files are used to check accuracy and performance of NSR2205i11
series or higher with an exposure area of 21.2 x 21.2 mm and 22 x 22 mm. The
R2205HA Version 7 series and R2205HB Version 7 series test reticles are used
together with process data files “22nUSRA” and “22nUSRB” for all types of
evaluations. However, process data files “VER10USRA” and “VER10USRB” are
used to display only the versions of process data files in the comment field in the
screen display, and cannot be used for exposure.
NOTES
This process program is not supported by machines prior to NSR-2205i11 series.
To improve functions, the specifications and contents of the process data files
may be changed without notice.
This section describes the process data which is included in process data file
“22nUSRA”.
X Vernier
Y Vernier
The MRB file is used to evaluate moving mirror bow correction measurement.
The REG1 file is used for the first exposure when measurement is evaluated with
WGA, EGA, DD (LSA), and FIA.
The WGA file is used for the second exposure of overlay accuracy evaluation
with EGA (Enhanced Global Alignment) of LSA. With the wafer global alignment,
the WGA marks are used to perform an LSA search alignment. Also, 3-shot EGA
measurements in a wafer are performed with LSA, and the second exposure is
performed with the baseline shift method using the measurement results.
The EGA file is used for the second exposure of overlay accuracy evaluation with
EGA of LSA. With the wafer global alignment, the WGA marks are used to
perform an LSA search alignment. Also, 1 O-shot EGA measurements in a wafer
are performed with LSA, and the second exposure is performed with the baseline
shift method using the measurement results.
The DD file is used for the second exposure of overlay accuracy evaluation with
Die by Die (D/D) alignment of LSA. With the wafer global alignment, the WGA
marks are used to perform an LSA search alignment. Also, 2-shot EGA
measurements in a wafer are performed with LSA, and the second exposure is
performed on all shots that may be aligned with the baseline shift method using
the D/D measurement result of LSA.
The FIA file is used for the second exposure of overlay accuracy evaluation with
EGA of FIA. With the wafer global alignment, the WGA marks are used to
perform an FIA search alignment. Also, 1 O-shot EGA measurements in a wafer
are performed with FIA, and the second exposure is performed with the baseline
shift method using the measurement results.
The MAT1 file is used for the first exposure of matching evaluation among the
same type of machines.
The MAT2 file is used for the second exposure of matching evaluation among the
same type of machines. With the wafer global alignment, the WGA marks are
used to perform an LSA search alignment. Test reticle A is used for both the first
and second exposure. The second exposure is performed with the baseline shift
method.
The THRPTl file is used for the first exposure during evaluations such as
THRPTW, THRPTE, THRPTD, THRPTF, ALRUN and ALRUNF.
The THRPTW file is used for the second exposure of throughput evaluation with
EGA of LSA. With the wafer global alignment, the WGA marks are used to
perform an LSA search alignment. Also, 3-shot EGA measurements in a wafer
are performed with LSA, and the second exposure is performed using the
measurement results.
The THRPTE file is used for the second exposure of throughput evaluation with
EGA of LSA. With the wafer global alignment, the WGA marks are used to
perform an LSA search alignment. Also, 10-shot EGA measurements in a wafer
are performed with LSA, and the second exposure is performed using the
measurement results.
The THRPTD file is used for the second exposure of throughput evaluation with
D/D alignment of LSA. With the wafer global alignment, the WGA marks are used
to perform an LSA search alignment. Also, 2-shot EGA measurements in a wafer
are performed with LSA, and the second exposure is performed on all shots that
may be aligned using the D/D measurement result of LSA.
The THRPTF file is used for the second exposure of throughput evaluation with
EGA of FIA. With the wafer global alignment, the WGA marks are used to
perform an FIA search alignment. Also, 10-shot EGA measurements in a wafer
are performed with FIA, and the second exposure is performed using the
measurement results.
The ALRUN file is used for operation tests such as wafer alignment, wafer loader
prealignment, and reticle blind operation. With the wafer global alignment, the
WGA marks are used to perform an LSA search alignment. Two types of reticle
blinds are specified for each wafer.
The ALRUNF file is used for operation tests such as wafer alignment, wafer
loader prealignment, and reticle blind operation. With the wafer global alignment,
the WGA marks are used to perform an FIA search alignment. Two types of
reticle blinds are specified for each wafer.
This section describes the process data which is included in process data file
“22nUSRB”.
The TPR file is used to calculate the proper focus and exposure time. Focus
offset 17 steps and exposure time 11 steps are used to stop the reticle blind and
to expose only the shot center. Because the TEST-2 wafer exposure mode is
used, a wafer is exposed by entering the center and step values of the exposure
time, and the center and step values of the focus offset. The exposure time and
focus offset value are increased or decreased by adjusting values from the map
center.
The RESO file is used to evaluate resolution on the entire wafer. The entire wafer
surface is exposed with the reticle blinds fully opened. The maximum exposure
area can also be evaluated at the same time. Because the NORMAL wafer
exposure mode is used, the exposure time and focus offset value are fixed.
The LCM file is used for collecting magnification data of lens controller accuracy
evaluation.
The LCH file is used for heat evaluation of lens controller accuracy.
The WLREP file is used for evaluation of wafer prealignment repeatability. With
the wafer global alignment, the triple WGA marks are used to perform an LSA
search alignment.
The WLRSlDE1 file is used for the first exposure of wafer prealignment
repeatability evaluation. This file is for use with the NSR in which the 90° OF
(orientation flat) is mounted on the wafer loader.
The WLRSIDE2 file is used for the second exposure of wafer prealignment
repeatability evaluation. This file is for use with the NSR in which the 90° OF is
mounted on the wafer loader. With the wafer global alignment, the triple WGA
marks are used to perform an LSA search alignment.
The ORT1 file is used for the first exposure of orthogonality and straightness
evaluations of shot arrays and the interferometer moving mirror.
The ORT2 file is used for the second exposure of orthogonality and straightness
evaluations of shot arrays and the interferometer moving mirror. For exposure for
orthogonality evaluation, a wafer is loaded on the wager loader by rotating 90
degrees in the counterclockwise direction when viewed from the top of the wafer.
For exposure for straightness evaluation, a wafer is loaded on the wager loader
by rotating 180 degrees when viewed from the top of the wafer. In either case,
with the wafer global alignment, the single WGA mark is used to perform an LSA
search alignment.
The ORTSIDE file is used for the second exposure of orthogonality evaluations
of shot arrays and the interferometer moving mirror. This file is for use with the
NSR in which the 90° OF is mounted on the wafer loader. With the wafer global
alignment, the single WGA mark is used to perform an LSA search alignment.
The ORTM and ORTM90 files are used for orthogonality measurements of shot
arrays and the interferometer moving mirror. To evaluate orthogonality, load the
first wafer (ORT1) for orthogonality measurement with the ORTM placing the OF
side in front, execute t-EGA measurement (FIA), and record the orthogonality
correction value (A).Next, load a wafer on the wafer holder with the ORTM90 by
rotating the wafer 90 degrees in counterclockwise direction when viewed from
the top, execute t-EGA measurement (FIA), and record the orthogonality
correction value (B). The orthogonality can be calculated using the following
equation:
The ORTMSIDE file is used to measure orthogonality of shot arrays and the
interferometer moving mirror. This file is for use with the NSR in which the 90°
OF is mounted on the wafer loader. The functions are the same as those of the
ORTM90.
APPENDIX A
PROFILES OF THE MARKS
The profiles of the marks descibed in the previos sections are shown below.
20
Main Mark
Sub Mark
Input Coordinates
Shield Area
NOTE
Magnifications of photos in Figures A-28 and A-29 are different.