Chapter16

Semiconductor and diodes

First: What are the types of solid materials??
1-Conductors
2-Insulators
3-Semi conductors

Second: What are the difference between the 3 solid

materials?
It is determined by the atomic structure of the
material

Third what are the Semiconductors:

1-At very low temp, semiconductors have the
properties of an insulator
2-At high temp some electrons are free to move and
act as conductor
3-It has very interesting properties that make them
use full in the production of electronic devices

Silicon, germanium, gallium arsenide

Fourth the silicon??
At high temp free electrons that are able to move
throughout the crystal are generated

Fifth what is the doping and un doping (intrinsic

conduction)???
Un doping: it the form of conduct7##ion
Doping : it the addition of impurities to a
semiconductor……it can affects it’s properties
Ex of doping: phosphorus in silicon….(Ph) is a
pentavalent material that has five valence electrons in
it’s outer electron shell

Sixth What are the typing of doping??

N-type doping: when Ph atom is doped with lattice of
silicon
Ph is known as donor atom bec. they produce excess of
free electrons
They have free negative charge carries
P-type doping: when boron atom is doped with lattice
of silicon
Boron is known as acceptor atom bec. they produce
excess of positive holes
They have free positive charge carries
-Both N and P type have much greater conductivities
intrinsic material……the magnitude depending on the
doping level

Seventh What are the Majority and minority charge

carriers ??
Majority : the dominant ‫ االساسي‬charge carriers in a
doped semiconductor
‫اللي هي ال الكترونز ف ال ان طايب و ال هولز ف ال بي طايب‬
Minority : the other charge carries

Eighth what are the PN-junction ???

Holes diffuse from the P-type side to the N-type side
and compline with free electrons
Ninth the depletion layer ???
It is produced from the process of diffusion and
recombination of charge carriers produces a region
close the junction that has very few mobile charge
carriers

The charge carriers must overcome the potential

barrier ‫ حاجز‬produced by it to cross the junction

Tenth the diffusion current ???

Is produced by the majority chare carriers that
overcome the barrier……it’s produced in the junction
Eleventh the two types of PN junction ???
1-forward bias :
The P-type is connected to the positive part of the
battery and the N-type is connected to the negative
part of the battery as shown in the figure:

2-reverse bias :
‫عكس ال فورورد بياز‬
Forward and reverse currents :

12th the diode current ???

It is current produced in the junction
I=IS(ee*v/eta*k*T-1) A
IS is the reverse saturation
V is the voltage
T is the absolute temp
K is Boltzamann’s constant
Eta is Greek letter in the range of 1 to 2
If V is less about -0.1 v
Therefor I=-IS
If V is greater about +0.1v
Therefor I=IS(eev/kT)
At normal room temp:
I=IS*e40v
Current voltage characteristics of PN junction :

13th Diodes ???

Conducts electricity in one direction and not the other

It has two electrodes :Anode and Cathode

Special purpose diode :
 Zener diode regulate the voltage
 Schottky diodes :formed by junction metal and
semiconductor much faster than PN junction
 Tunnel diodes :strange behavior for current and
voltage

 Varactor diodes :store charge and may be used as

capacitor
 Led lights emit diodes
 Forward bias voltage for diode between 1.5 and
3.5 volt


Zener diode ???
In forward bias act as ordinary diode
In reverse bias :it regulate the voltage at a specific
breakdown voltage VZ
R used to control the current
 VOUT =VZ
R=(VIN-VZ)/IZ

Photodiodes ???

14th Ideal diode ???

 In reality no component has the properties of an
ideal diode

 PN junction is not an ideal diode

15th diode characteristics ??? ‫الخواص‬
 Breakdown voltage :
 The reverse current is constant as the reverse
voltage is is increased to a critical ‫ حرج‬voltage
called the reverse breakdown voltage
Diode equivalent circuits :

16th Diode circuit analysis ???

Apply kirchhoff’s voltage law :
E=VD+VR
E=VD+IR
Is=I*e40vd

17th load lines :

VD=E-IR

Using graph to solve the problem

Ex :

Sol :

18th diode circuits :

 Half wave rectifier

 Produce a steadier ‫ثابت‬output voltage

  A reservoir capacitor is added to the circuit

Full wave rectifier :

Full wave rectifier with transformer :

Signal clamping:

19th catch diodes ???

 Prevent back emf from inductive sources as motor
and solenoids
 Connect in reverse biased with voltage
 when the supply voltage ,is removed ……the
inductor will forward biased the diode …..then it
conducts