IAUC28N08S5L230

OptiMOS™-5 Power-Transistor
Product Summary

VDS 80 V
Features
RDS(on) 23 mW
• OptiMOS™ - power MOSFET for automotive applications
ID 28 A
• N-channel - Enhancement mode - Logic Level

• MSL1 up to 260°C peak reflow PG-TDSON-8

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Quality Features 1
• Infineon Automotive Quality
1
• Extended qualification beyond AEC Q101

• Enhanced testing

• Advanced adhesion against delamination

• Complementary testing for board level reliability

Type Package Marking

IAUC28N08S5L230 PG-TDSON-8 5N08L230

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continous drain current ID T C=25°C, V GS=10V 28 A

T C=100 °C,
20
V GS=10 V1)
Pulsed drain current1) I D,pulse T C=25°C 112

Avalanche energy, single pulse1) E AS I D=14 A 28 mJ

Avalanche current, single pulse I AS - 14 A

Gate source voltage V GS - ±20 V

Power dissipation P tot T C=25 °C 38 W

Operating and storage temperature T j, T stg - -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

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Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics1)

Thermal resistance, junction - case R thJC - - - 3.9 K/W

Thermal resistance,
R thJA - - 28.5 -
junction - ambient2)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

V GS=0 V,
Drain-source breakdown voltage V (BR)DSS 80 - - V
I D=1 mA

Gate threshold voltage V GS(th) V DS=V GS, I D=11 µA 1.2 1.6 2.0

V DS=80 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 1 µA
T j=25 °C

V DS=80 V, V GS=0 V,
- - 100
T j=85 °C1)

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

Drain-source on-state resistance RDS(on) V GS=4.5 V, I D=14 A - 21 28 mΩ

V GS=10 V, I D=14 A - 15 23

Gate resistance1) RG - - 0.9 - W

 IAUC28N08S5L230

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics1)

Input capacitance C iss - 667 867 pF

V GS=0 V, V DS=40 V,
Output capacitance C oss - 118 153
f =1 MHz
Reverse transfer capacitance Crss - 9.3 14

Turn-on delay time t d(on) - 2 - ns

Rise time tr V DD=40 V, V GS=10 V, - 1 -

Turn-off delay time t d(off) I D=28 A, R G=3.5 W - 6 -

Fall time tf - 4 -

Gate Charge Characteristics1)

Gate to source charge Q gs - 2.1 2.7 nC

Gate to drain charge Q gd V DD=40 V, I D=14 A, - 2.5 3.7

Qg V GS=0 to 10 V
Gate charge total - 11.6 15.1

Gate plateau voltage V plateau - 3.1 - V

Reverse Diode

Diode continous forward current1) IS - - 28 A

T C=25 °C
Diode pulse current1) I S,pulse - - 70

V GS=0 V, I F=14 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25 °C

Reverse recovery time1) t rr V R=40 V, I F=28A, - 30 - ns

di F/dt =100 A/µs
Reverse recovery charge1) Q rr - 22 - nC
1)
The parameter is not subject to production test - verified by design/chracterization.
2)
Device on four layer 2s2p PCB defined in accordance with JEDEC standards (JESD51-5-7).
PCB is vertical in still air.

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1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V

45 30

40
25
35

30 20

25
Ptot [W]

ID [A]
15
20

15 10

10
5
5

0 0
0 50 100 150 200 0 50 100 150 200

TC [°C] TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p)
parameter: t p parameter: D =t p/T

1000 101

0.5

100 1 µs 100
0.1
ZthJC [K/W]
ID [A]

10 µs
0.05

100 µs
0.01
150 µs
10 10-1

single pulse

1 10-2
0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]

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5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C
parameter: V GS parameter: V GS

90

10 V
120 80
7V 3V
3.5 V
70 4V 4.5 V
100

60

RDS(on) [mW]
80
4.5 V
ID [A]

50

60
4V 40

40
30
3.5 V 7V

20 20
3V
10 V

0 10
0 1 2 3 4 5 6 7 0 40 80 120

VDS [V] ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 14 A; V GS = 10 V
parameter: T j

140 40

120 25 °C 35
-55 °C

100 30
175 °C
RDS(on) [mW]

80 25
ID [A]

60 20

40 15

20 10

0 5
1.5 3 4.5 6 -55 -15 25 65 105 145

VGS [V] Tj [°C]

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9 Typ. gate threshold voltage 10 Typ. capacitances

V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D

2.5 103

Ciss

110 µA 102
1.5 Coss
VGS(th) [V]

C [pF]
11 µA

1
101

Crss

0.5

0
-60 -20 20 60 100 140 180 0 20 40 60 80

Tj [°C] VDS [V]

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(VSD) I AS = f(t AV)
parameter: T j parameter: Tj(start)

103 100

102 10
25 °C

100 °C
IAV [A]

175 °C
IF [A]

25 °C 150 °C

101 1

100 0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000

VSD [V] tAV [µs]

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13 Typical avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA
parameter: I D

120 87

86
3.5 A
100 85

84
80
83

VBR(DSS) [V]
EAS [mJ]

82
60
81
7A
80
40
79

14 A 78
20
77

0 76
25 75 125 175 -60 -20 20 60 100 140 180

Tj [°C] Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms

V GS = f(Q gate); I D = 14 A pulsed
parameter: V DD

10

9 V GS

Qg
8

7 16 V
64 V

6 40 V
VGS [V]

2
Q gate

1 Q gd
Q gs

0
0 5 10
Qgate [nC]

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PG-TDSON-8: Outline

Footprint

Dimensions in mm
Packaging

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Published by
Infineon Technologies AG
85579 Neubiberg, Germany

© Infineon Technologies AG 2019

All Rights Reserved.

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or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

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For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
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effectiveness of that device or system. Life support devices or systems are intended to be implanted
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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 9 2019-10-04