psmn009 100p

You might also like

Download as pdf or txt
Download as pdf or txt
You are on page 1of 14

PSMN009-100P

N-channel TrenchMOS SiliconMAX standard level FET


Rev. 4 — 27 December 2011 Product data sheet

1. Product profile

1.1 General description


SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits


 Low conduction losses due to low  Suitable for high frequency
on-state resistance applications due to fast switching
characteristics

1.3 Applications
 High frequency computer motherboard  OR-ing applicationss
DC-to-DC convertors

1.4 Quick reference data


Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V
ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; - - 75 A
see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 230 W
Static characteristics
RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; - 7.5 8.8 mΩ
see Figure 9; see Figure 10
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 75 A; VDS = 80 V; - 44 - nC
Tj = 25 °C; see Figure 11
Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source
G
mb D mounting base; connected to drain
mbb076 S

1 2 3

SOT78 (TO-220AB)

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PSMN009-100P TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 2 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 - 65 A
VGS = 10 V; Tmb = 25 °C; see Figure 1; - 75 A
see Figure 3
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 - 400 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 230 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
VGSM peak gate-source voltage pulsed; tp ≤ 50 µs; Tj ≤ 150 °C; δ = 25 % -30 30 V
Source-drain diode
IS source current Tmb = 25 °C - 75 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 400 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 35 A; - 120 mJ
avalanche energy Vsup = 15 V; unclamped; tp = 0.1 ms;
RGS = 50 Ω
IDS(AL)S non-repetitive drain-source VGS = 10 V; Vsup = 15 V; RGS = 50 Ω; - 75 A
avalanche current Tj(init) = 25 °C; unclamped

03ah99 03aa16
120 120
Ider
(%) Pder
100 (%)

80 80

60

40 40

20

0 0
0 30 60 90 120 150 180 0 50 100 150 200
Tmb (°C) Tmb (°C)

Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a
function of mounting base temperature function of mounting base temperature

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 3 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

03ai01
103
ID
(A) Limit RDSon = V DS / ID
tp =10 μ s
2
10
100 μ s

10

1 ms
DC

1 10 ms
100 ms

10-1
10-1 1 10 102 103
V DS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 4 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to mounting see Figure 4 - - 0.65 K/W
base
Rth(j-a) thermal resistance from junction to ambient vertical in free air - 60 - K/W

03af48
1

Zth(j-mb) δ = 0.5
(K/W)
0.2
10−1
0.1

0.05

0.02
tp
10−2 P δ=
T

single pulse
tp t
T
10−3
10−6 10−5 10−4 10−3 10−2 10−1 1 10
tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 5 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - - V
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V
see Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V
see Figure 8
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.4 V
see Figure 8
IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 175 °C - - 500 µA
VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA
RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; - 20.25 23.8 mΩ
see Figure 9; see Figure 10
VGS = 10 V; ID = 25 A; Tj = 25 °C; - 7.5 8.8 mΩ
see Figure 9; see Figure 10
Dynamic characteristics
QG(tot) total gate charge ID = 75 A; VDS = 80 V; VGS = 10 V; - 156 - nC
QGS gate-source charge Tj = 25 °C; see Figure 11 - 31 - nC
QGD gate-drain charge - 44 - nC
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 8250 - pF
Coss output capacitance Tj = 25 °C; see Figure 12 - 620 - pF
Crss reverse transfer capacitance - 300 - pF
td(on) turn-on delay time VDS = 15 V; RL = 1.25 Ω; VGS = 10 V; - 38 - ns
tr rise time RG(ext) = 6 Ω; Tj = 25 °C; ID = 12 A - 59 - ns
td(off) turn-off delay time - 120 - ns
tf fall time - 43 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.8 1.2 V
see Figure 13

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 6 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

03am54 03am56
50 80
10 V 6 V 5.6 V 5.4 V
ID Tj = 25 °C VDS > ID x R DSon
ID
(A) (A)
40 5.2 V
60

30 5V

40

20 4.8 V

4.6 V 20
10
4.4 V 175 °C Tj = 25 °C

VGS = 4.2 V
0 0
0 0.2 0.4 0.6 0.8 1 0 2 4 6
VDS (V) VGS (V)

Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values function of gate-source voltage; typical values

03aa35 03aa32
10−1 5
ID VGS(th)
(A) (V)
min typ max
10−2 4
max

10−3 3
typ

10−4 2 min

10−5 1

10−6 0
0 2 4 6 −60 0 60 120 180
VGS (V) Tj (°C)

Fig 7. Sub-threshold drain current as a function of Fig 8. Gate-source threshold voltage as a function of
gate-source voltage junction temperature

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 7 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

03ai03 03aa29
15 3
5V 5.5 V
RDSon
(mΩ) a
VGS = 6 V
12.5
2

10 8V

1
10 V 20 V
7.5

5 0
0 50 100 150 200 -60 0 60 120 180
ID (A) Tj (°C)

Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values factor as a function of junction temperature

03ai08 03ai07
10 105
VGS
C
(V)
(pF)
8

Ciss
104
6

4
103
Coss
2
Crss

0 102
0 50 100 150 200 10−1 1 10 102
QG (nC) VDS (V)

Fig 11. Gate-source voltage as a function of gate Fig 12. Input, output and reverse transfer capacitances
charge; typical values as a function of drain-source voltage; typical
values

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 8 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

03ai06
100
IS
(A)
80

Tj = 175 °C
60

25 °C
40

20

0
0 0.5 1.0 1.5
VSD (V)

Fig 13. Source current as a function of source-drain voltage; typical values

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 9 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

E A
p A1

q mounting
D1 base

L1(1) L2(1)

Q
b1(2)
L (3×)

b2(2)
(2×)
1 2 3

b(3×) c

e e

0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
L2(1)
UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q
max.
4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2

Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
08-04-23
SOT78 3-lead TO-220AB SC-46
08-06-13

Fig 14. Package outline SOT78 (TO-220AB)

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 10 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PSMN009-100P v.4 20111227 Product data sheet - PSMN009-100P v.3
Modifications: • Various changes to content.
PSMN009-100P v.3 20111121 Product data sheet - PSMN009-100P v.2

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 11 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

9. Legal information

9.1 Data sheet status


Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without
subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior
Nexperia does not give any representations or warranties as to to the publication hereof.
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information. Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or
internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected
modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental
representations or warranties as to the accuracy or completeness of damage. Nexperia accepts no liability for inclusion and/or use of
information included herein and shall have no liability for the consequences of Nexperia products in such equipment or applications and
use of such information. therefore such inclusion and/or use is at the customer’s own risk.

Short data sheet — A short data sheet is an extract from a full data sheet Quick reference data — The Quick reference data is an extract of the
with the same product type number(s) and title. A short data sheet is intended product data given in the Limiting values and Characteristics sections of this
for quick reference only and should not be relied upon to contain detailed and document, and as such is not complete, exhaustive or legally binding.
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales Applications — Applications that are described herein for any of these
office. In case of any inconsistency or conflict with the short data sheet, the products are for illustrative purposes only. Nexperia makes no
full data sheet shall prevail. representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between Customers are responsible for the design and operation of their applications
Nexperia and its customer, unless Nexperia and and products using Nexperia products, and Nexperia
customer have explicitly agreed otherwise in writing. In no event however, accepts no liability for any assistance with applications or customer product
shall an agreement be valid in which the Nexperia product is design. It is customer’s sole responsibility to determine whether the Nexperia
deemed to offer functions and qualities beyond those described in the product is suitable and fit for the customer’s applications and
Product data sheet. products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
9.3 Disclaimers applications and products.

Limited warranty and liability — Information in this document is believed to Nexperia does not accept any liability related to any default,
be accurate and reliable. However, Nexperia does not give any damage, costs or problem which is based on any weakness or default in the
representations or warranties, expressed or implied, as to the accuracy or customer’s applications or products, or the application or use by customer’s
completeness of such information and shall have no liability for the third party customer(s). Customer is responsible for doing all necessary
consequences of use of such information. testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental, the products or of the application or use by customer’s third party
punitive, special or consequential damages (including - without limitation - lost customer(s). Nexperia does not accept any liability in this respect.
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such Limiting values — Stress above one or more limiting values (as defined in
damages are based on tort (including negligence), warranty, breach of the Absolute Maximum Ratings System of IEC 60134) will cause permanent
contract or any other legal theory. damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
Notwithstanding any damages that customer might incur for any reason the Recommended operating conditions section (if present) or the
whatsoever, Nexperia’s aggregate and cumulative liability towards Characteristics sections of this document is not warranted. Constant or
customer for the products described herein shall be limited in accordance repeated exposure to limiting values will permanently and irreversibly affect
with the Terms and conditions of commercial sale of Nexperia. the quality and reliability of the device.

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 12 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

Terms and conditions of commercial sale — Nexperia In the event that customer uses the product for design-in and use in
products are sold subject to the general terms and conditions of commercial automotive applications to automotive specifications and standards, customer
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise (a) shall use the product without Nexperia’s warranty of the
agreed in a valid written individual agreement. In case an individual product for such automotive applications, use and specifications, and (b)
agreement is concluded only the terms and conditions of the respective whenever customer uses the product for automotive applications beyond
agreement shall apply. Nexperia hereby expressly objects to Nexperia’s specifications such use shall be solely at customer’s
applying the customer’s general terms and conditions with regard to the own risk, and (c) customer fully indemnifies Nexperia for any
purchase of Nexperia products by customer. liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
No offer to sell or license — Nothing in this document may be interpreted or standard warranty and Nexperia’s product specifications.
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights. 9.4 Trademarks
Export control — This document as well as the item(s) described herein may Notice: All referenced brands, product names, service names and trademarks
be subject to export control regulations. Export might require a prior are the property of their respective owners.
authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly


states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.

10. Contact information


For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

PSMN009-100P All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 4 — 27 December 2011 13 of 14


Nexperia PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

© Nexperia B.V. 2017. All rights reserved


For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 27 December 2011

You might also like