VLSI PROCESS TECHNOLOGY

PROFESSIONAL ELECTIVES IV
Course Code Category Hours / Week Credits Maximum Marks
L T P C CIA SEE Tota
17CD04209 Core
4 0 - 4 40 60 100
l
Contact Classes: Tutorial Classes: Nil Practical Classes: Nil Total Classes: 60
OBJECTIVES:
60
 To introduce the fundamentals of multi rate signal processing and cognitive
Radio.
 To provide rigorous foundation in MOS and CMOS fabrication process.
OUTCOMES:
 Able to understand various techniques involved in the VLSI fabrication process.
 Able to understand the different lithography methods and etching process
 Analyze the deposition and diffusion mechanisms.
 Analyze the fabrication of NMOS, CMOS memory and bipolar devices
 Understand the nuances of assembly and packaging of VLSI devices.
UNIT - I ELECTRON GRADE SILICON Classes: 15
Crystal growth. Wafer preparation. Vapour phase and molecular beam epitaxy. SOI. Epitaxial
evaluation. Oxidation techniques, systems and properties. Oxidation defects. Ch 1, 2, 3
UNIT - II LITHOGRAPHY Classes: 10
Optical, electron, X-ray and ion lithography methods. Plasma properties, size, control, etch
mechanism, etch techniques and equipments ch 4, 5
UNIT - III DEPOSITION PROCESS AND METHODS Classes: 10
Diffusion in solids. Diffusion equation and diffusion mechanisms ch 7
UNIT-IV ION IMPLANTATION AND METALLIZATION Classes: 15
Process simulation of ion implementation, diffusion, oxidation, epitaxy, lithography, etching and
deposition. NMOS, CMOS, MOS memory and bipolar IC technologies. IC fabrication ch 10, 11
UNIT-V ANALYTICAL AND ASSEMBLY TECHNIQUES Classes: 10
Packaging of VLSI devices ch 13
Text Books:
1. S.M.Sze, “VLSI Technology (2/e)” , McGraw Hill, 1988
Reference Books:
1. W. Wolf, “Modern VLSI Design”, (3/e), Pearson,2002