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Cmn-Lab Session-4rm
Cmn-Lab Session-4rm
1. SAED
Open program Digital Micrograph. Open file Image1. Spots in this image correspond to a Si substrate.
With centre tool (a circle in a cross) choose two centrosymmetrical spots so that the program can
automatedly find the central spot. Then with spot indexing tool (an angle) explore all the spots in the
diffraction; the program will assign a number to each of them and then the reciprocal space distance
and the real space distance of the corresponding plane family, and the angle to the first spot will
With program Carine (Calcul/Identificaction of planes) and the obtained information determine the
zone axis of the Si substrate and index the diffraction (make a figure). The d’s in program Carine will
be similar to the experimental. In order to refine the calibration of the diffraction in Digital Micrograph,
assign the theoretical d’s to the experimental spots using Microscope/Calibrate Image.
Open file Image2. In this case, we have the diffraction corresponding to pollycrystalline Au, that was
already hinted in previous image added to the substrate one. As images 1 and 2 are the diffractions of
the substrate and the layer of the same sample (in PV geometry) and in the same magnification, we
can transfer the calibration from the substrate SAED to the layer SAED (using Difpack/Image/Transfer
Calibration). Find the d’s of the rings and index them with program Carine (Calcul/Plane spacing list).
2. HRTEM
Now we have a HRTEM image of a Si NW. With program Digital Micrograph, open file Image3. Select a
zone in the NW before its bending with zone selection tool (discontinuous square), keeping “Alt”
Departament of Egineering: Electronics
MASTER: Nanoscience and Nanotechnology
SUBJECT: Characterisation and manipulation at the nanoscale
pressed so that it will have the proper dimensions. Use Ctrl+F to get its local FFT (digital Fourier
Select a zone in the NW after the bending and get a local FFT. Then index it. Find the growth direction
In one FFT of the NW, choose two centrosymmetrical spots and mask them with the appropriated tool
(two spots separated by central spot) and command “process/apply mask”. What do you find by doing
so? And if repeating the process with another pair of centrosymmetrical spots?