Supporting Information to

Atomic layer deposition of

antimony oxide and antimony sulfide

by Ren Bin Yang, Julien Bachmann, Manfred Reiche,

Jürgen W. Gerlach, Ulrich Gösele, and Kornelius Nielsch

Figure S1. Growth rate dependence of Sb2O5 ALD on the deposition temperature.

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Figure S2. Main graph: Growth of an antimony sulfide thin film by ALD on a Si substrate at 120°C,
determined by ellipsometry. Pulse, exposure and purge durations of Sb(NMe2)3 are 1.4 s, 15 s and 10 s.
Inset: temperature dependence of the growth rate (apparent thicknesses measured after 400 cycles).

Figure S3. Optical properties of the Sb2O5 and Sb2S3 thin films, determined by spectroscopic
ellipsometry.