Electronics Engineering Lab

Lab Report 09

Bipolar Junction Transistor (BJT) Characteristics

4th SEMESTER

Submitted to: Engr. Ali Hassan

Session: 2023 Section:c Group:
SUBMITTED BY
Name CMS Lab Lab VIVA
Performance Reports (2) Total
(4) (4)
MUHAMMAD ZORAIN 366729
HAIDER
Muhammad Ibrahim 365711
Muhammad Usman 373472
Waleed Nasir 394281

School of Mechanical and Manufacturing Engineering

 Conclusion
(Muhammad Zorain Haider):

In this lab we observed the characteristics of bipolar junction transistors. Value of IC , α, β and IE are
calculated from the measured values of VRC and VBE at the given IB values of 10 μA, 20 μA, 30 μA,
40 μA and 50 μA. The maximum calculated β value is 263.40 in region of IB= 20 μA at IC = 5.285 mA
and VCE = 14 V. The minimum value of β in 50 μA region at IC = 10.336 mA and VCE = 2 V is
234.9. The value of VBE varies between 0.644V to 0.694V which is very close to threshold voltage of
silicon so if we know that the given BJT is made of silicon the value of VBE can be approximated to
0.7V.
(Muhammad Ibrahim):
This lab involved examining the characteristics of bipolar junction transistors by calculating the values of
IC, α, β, and IE using measured values of VRC and VBE at different IB values. The maximum β value was
found to be 263.4 at IB = 20 μA, IC = 5.285 mA, and VCE = 14 V, while the minimum β value was 234.9
at IC = 10.336 mA and VCE = 2 V in the 50 μA region. The estimated value of VBE ranged from 0.644V
to 0.694V, which closely approximates the threshold voltage of silicon. It was observed that an increase in
Ic and Vce results in an increase in β, although the effects of each are interrelated.

(Muhammad Usman):
This lab focused on the properties of bipolar junction transistors, with values of IC and IE being determined
from measured values of VRC and VBE at different IB values. The maximum β value was found to be
263.4 at IB = 20 μA, IC = 5.285 mA, and VCE = 14 V, while the minimum β value was 234.9 at IC =
10.336 mA and VCE = 2 V in the 50 μA region. If the BJT is made of silicon, the estimated value of VBE
can be assumed to be 0.7V. The value of α was roughly estimated to be 0.996.

(Waleed Nasir):
In this lab, we investigated the characteristics of bipolar junction transistors by measuring VRC and VBE
values at different IB values and using them to calculate IC and IE. The maximum values were found at IB
= 20 μA, IC = 5.285 mA, and VCE = 14 V with a β value of 263.4, while the minimum β value was 234.9
at IC = 10.336 mA and VCE = 2 V in the 50 μA region. Assuming the provided BJT is made of silicon, the
estimated value of VBE was 0.7V, which falls within the threshold voltage range for silicon.