HiPerFASTTM IGBT IXGH 40N60C2 VCES = 600 V

C2-Class High Speed IGBTs IXGT 40N60C2 IC25 = 75 A

VCE(sat) = 2.7 V
tfi typ = 32 ns

TO-268 (IXGT)
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 600 V
G
VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB)

VGES Continuous ±20 V

VGEM Transient ±30 V
TO-247 (IXGH)
IC25 TC = 25°C (limited by leads) 75 A
IC110 TC = 110°C 40 A
ICM TC = 25°C, 1 ms 200 A
C (TAB)
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 80 A G
C
(RBSOA) Clamped inductive load @ ≤ 600 V E
PC TC = 25°C 300 W G = Gate, C = Collector,
TJ -55 ... +150 °C E = Emitter, TAB = Collector

TJM 150 °C
Tstg -55 ... +150 °C Features
Maximum lead temperature for soldering 300 °C z
Very high frequency IGBT
1.6 mm (0.062 in.) from case for 10 s z
Square RBSOA
Plastic body 200 °C z
High current handling capability
z
MOS Gate turn-on
Md Mounting torque (M3) 1.13/10Nm/lb.in. - drive simplicity
Weight TO-247 6 g
TO-268 4 g Applications

z
PFC circuits
Symbol Test Conditions Characteristic Values z
Uninterruptible power supplies (UPS)
(TJ = 25°C unless otherwise specified) z
Switched-mode and resonant-mode
min. typ. max. power supplies
z
AC motor speed control
VGE(th) IC = 250 μA, VCE = VGE 3.0 5.0 V z
DC servo and robot drives
z
DC choppers
ICES VCE = VCES TJ = 25°C 50 μA
VGE = 0 V TJ = 150°C 1 mA
Advantages
IGES VCE = 0 V, VGE = ±20 V ±100 nA
z
High power density
VCE(sat) IC = 30 A, VGE = 15 V TJ = 25°C 2.2 2.7 V z
Very fast switching speeds for high
TJ = 150°C 2.0 V frequency applications

© 2005 IXYS All rights reserved DS99042C(10/05)

 IXGH 40N60C2
IXGT 40N60C2
Symbol Test Conditions Characteristic Values TO-247 AD Outline
(TJ = 25°C unless otherwise specified)
min. typ. max.

gfs IC = 30 A; VCE = 10 V, 20 36 S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
∅P

Cies 2500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 180 pF
Cres 54 pF

Qg 95 nC
e
Qge IC = 30 A, VGE = 15 V, VCE = 300 V 14 nC
Dim. Millimeter Inches
Qgc 36 nC Min. Max. Min. Max.
A 4.7 5.3 .185 .209
td(on) 18 ns A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
tri Inductive load, TJ = 25°°C 20 ns b 1.0 1.4 .040 .055
td(off) IC = 30 A, VGE = 15 V 90 140 ns b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
VCE = 400 V, RG = Roff = 3 Ω
tfi 32 ns C .4 .8 .016 .031
D 20.80 21.46 .819 .845
Eoff 0.20 0.37 mJ E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
td(on) 18 ns L 19.81 20.32 .780 .800
L1 4.50 .177
tri 20 ns
Inductive load, TJ = 125°°C ∅P 3.55 3.65 .140 .144
Eon 0.3 mJ Q 5.89 6.40 0.232 0.252
IC = 30 A, VGE = 15 V
R 4.32 5.49 .170 .216
td(off) 130 ns
VCE = 400 V, RG = Roff = 3 Ω S 6.15 BSC 242 BSC
tfi 80 240 ns
Eoff 0.50 mJ TO-268 Outline

RthJC 0.42 K/W

RthCK (TO-247) 0.25 K/W

Min. Recommended Footprint

(Dimensions in inches and mm)

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
 IXGH 40N60C2
IXGT 40N60C2
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25 Deg. C @ 25 deg. C
60 210
VGE = 15V VG E = 15V
9V
13V 13V
180
50 11V
11V
9V
150
40
I C - Amperes

I C - Amperes
7V 120
30
90

20 7V
60

10
30
5V 5V
0 0
0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 6 7
V C E - Volts V C E - Volts

Fig. 3. Output Characteristics

Fig. 4. T emperature Dependence of V CE(sat)
@ 125 Deg. C
60 1.3
VG E = 15V 9V
13V 1.2
50 I C = 60A
11V
VC E (sat) - Normalized

1.1 VG E = 15V
40 7V
I C - Amperes

1
30
0.9
I C = 30A
20
0.8
5V
10
0.7 I C = 15A

0 0.6
0.5 1 1.5 2 2.5 3 25 50 75 100 125 150
V CE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

Fig. 6. Input Admittance
vs. Gate-to-Emitter voltage
4 210

T J = 25º C
180
3.5

150
3
I C - Amperes
VC E - Volts

120
2.5
I C = 60A 90
2
60 T J = 125º C
30A
25º C
1.5
30 -40º C
15A
1 0
5 6 7 8 9 10 11 12 13 14 15 4 5 6 7 8 9 10
V G E - Volts V G E - Volts

© 2005 IXYS All rights reserved

 IXGH 40N60C2
IXGT 40N60C2

Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG

70 1.8

60 1.6
T J = -40º C I C = 60A
25º C 1.4 TJ = 125º C
50 VGE = 15V
125º C

E off - milliJoules
g f s - Siemens

1.2 VC E = 400V
40
1
I C = 45A
30 0.8

0.6
20 I C = 30A
0.4
10
0.2 I C = 15A
0 0
0 30 60 90 120 150 180 2 4 6 8 10 12 14 16
I C - Amperes R G - Ohms

Fig. 9. Dependence of Eoff on IC Fig. 10. Dependence of Eoff on T emperature

1.6 1.6
R G = 3 Ohms R G = 3 Ohms
1.4 R G= 10 Ohms - - - - - 1.4 R G = 10 Ohms - - - - -
I C = 60A
VG E = 15V
VG E = 15V 1.2
1.2 VC E = 400V
E off - MilliJoules

VC E = 400V
E off - milliJoules

1 1

0.8 0.8 I C = 45A

T J = 125ºC
0.6 0.6

0.4 0.4
I C = 30A

0.2 0.2
T J = 25ºC I C = 15A
0 0
10 20 30 40 50 60 25 50 75 100 125
I C - Amperes TJ - Degrees Centigrade

Fig. 11. Gate Charge Fig. 12. Capacitance

15 10000
f = 1M Hz
VC E = 300V
I C = 30A
12
I G = 10mA
Capacitance - p F

C ies
1000
VG E - Volts

C oes
6
100

3
C res

0 10
0 20 40 60 80 100 0 5 10 15 20 25 30 35 40
Q G - nanoCoulombs V C E - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXGH 40N60C2
IXGT 40N60C2

F ig . 13. M aximu m Tran sien t Th ermal R esistan ce

0 .5

0 .4
R (th) J C - (ºC/W)

0 .3

0 .2

0 .1

0
1 10 100 10 0 0
Puls e W idth - millis ec onds

© 2005 IXYS All rights reserved

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