AOT10T60P/AOB10T60P/AOTF10T60P

600V,10A N-Channel MOSFET

General Description Product Summary

• Trench Power AlphaMOS-II technology VDS @ Tj,max 700V

• Low RDS(ON) IDM 40A
• Low Ciss and Crss
RDS(ON),max < 0.7Ω
• High Current Capability
• RoHS and Halogen Free Compliant Qg,typ 26nC
Eoss @ 400V 3.5µJ

Applications 100% UIS Tested

100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer,
and Telecom

Top View
TO-263 D
TO-220 TO-220F D2PAK
D
D

S S S G
D D
G G G
AOT10T60P S
AOTF10T60P AOB10T60P

Orderable Part Number Package Type Form Minimum Order Quantity

AOT10T60PL TO-220 Green Tube 1000
AOB10T60PL TO-263 Green Tape & Reel 800
AOTF10T60P TO-220F Pb Free Tube 1000
AOTF10T60PL TO-220F Green Tube 1000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT(B)10T60P AOTF10T60P AOTF10T60PL Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 10 10* 10*
ID
Current TC=100°C 6.6 6.6* 6.6* A
C
Pulsed Drain Current IDM 40
C
Avalanche Current L=1mH IAR 10 A
C
Repetitive avalanche energy EAR 50 mJ
Single pulsed avalanche energy G EAS 480 mJ
MOSFET dv/dt ruggedness 50
dv/dt V/ns
Peak diode recovery dv/dt J 15
TC=25°C 208 43 33 W
B PD
Power Dissipation Derate above 25°C 1.7 0.3 0.26 W/°C
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C

Thermal Characteristics
Parameter Symbol AOT(B)10T60P AOTF10T60P AOTF10T60PL Units
A,D
Maximum Junction-to-Ambient RθJA 65 65 65 °C/W
Maximum Case-to-sink A RθCS 0.5 -- -- °C/W
Maximum Junction-to-Case RθJC 0.6 2.9 3.8 °C/W
* Drain current limited by maximum junction temperature.

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 600
BVDSS Drain-Source Breakdown Voltage V
ID=250µA, VGS=0V, TJ=150°C 700
BVDSS Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V 0.56 V/ oC
/∆TJ
VDS=600V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=480V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nA
VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 3 4.3 5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A 0.58 0.7 Ω
gFS Forward Transconductance VDS=40V, ID=5A 8.8 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 10 A
ISM Maximum Body-Diode Pulsed Current C 40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1595 pF
VGS=0V, VDS=100V, f=1MHz
Coss Output Capacitance 56 pF
Effective output capacitance, energy
Co(er) 42 pF
related H
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
Co(tr) 74 pF
related I
Crss Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 11 pF
Rg Gate resistance f=1MHz 1.7 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 26 40 nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=10A 8.1 nC
Qgd Gate Drain Charge 8.2 nC
tD(on) Turn-On DelayTime 42 ns
tr Turn-On Rise Time VGS=10V, VDS=300V, ID=10A, 54 ns
tD(off) Turn-Off DelayTime RG=25Ω 52 ns
tf Turn-Off Fall Time 24 ns
trr Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V 497 ns
Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 7.3 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. ISD≤ID, di/dt≤200A/µs, VDD=400V, TJ≤TJ(MAX).

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 100

10V VDS=40V -55°C

16

10
12 7V

ID(A)
ID (A)

125°C
8
6.5V 1

4 25°C
VGS=5.5V 6V

0 0.1
0 5 10 15 20 25 30 2 4 6 8 10

VDS (Volts) VGS(Volts)

Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

2 3

2.5

Normalized On-Resistance
1.6

2 VGS=10V
RDS(ON) (Ω)

1.2 ID=5A
VGS=10V 1.5
0.8
1

0.4
0.5

0 0
0 5 10 15 20 25 -100 -50 0 50 100 150 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.3 1E+02

1.2 1E+01
BVDSS (Normalized)

1.1 1E+00
125°C
IS (A)

1 1E-01

0.9 1E-02 25°C

0.8 1E-03

0.7
1E-04
-100 -50 0 50 100 150 200
0.0 0.2 0.4 0.6 0.8 1.0
TJ (°C)
VSD (Volts)
Figure 5: Break Down vs. Junction Temperature
Figure 6: Body-Diode Characteristics

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000

VDS=480V Ciss
12 ID=10A
1000

Capacitance (pF)
VGS (Volts)

9
100 Coss
6
Crss
10
3

0 1
0 8 16 24 32 40 0.1 1 10 100 1000

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

7.5 15

6 Current rating ID(A) 12

4.5 9
Eoss(uJ)

Eoss
3 6

1.5 3

0 0
0 100 200 300 400 500 600 0 25 50 75 100 125 150
VDS (Volts) TCASE (°C)
Figure 9: Coss stored Energy Figure 10: Current De-rating (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 100

10µs 10µs
RDS(ON) RDS(ON)
10 limited 10 limited
100µs 100µs
ID (Amps)

ID (Amps)
1 1ms 1 1ms
DC
10ms DC 10ms

0.1 0.1s
0.1
1s
TJ(Max)=150°C TJ(Max)=150°C
TC=25°C TC=25°C
0.01 0.01
1 10 100 1000 1 10 100 1000
VDS(Volts) VDS(Volts)
Figure 11: Maximum Forward Biased Safe Operating Figure 12: Maximum Forward Biased Safe Operating
Area for TO-220/TO-263 (Note F) Area for TO-220F Pb Free (Note F)

100

RDS(ON) 10µs
10 limited

100µs
ID (Amps)

1 1ms

10ms
DC
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
0.01
1 10 100 1000
VDS(Volts)
Figure 13: Maximum Forward Biased Safe Operating
Area for TO-220F Green (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=0.6°C/W
Thermal Resistance

0.1
PD
Single Pulse
0.01 Ton
T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 14: Normalized Maximum Transient Thermal Impedance for TO-220/TO-263 (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=2.9°C/W
Thermal Resistance

0.1
PD

0.01 Single Pulse Ton

T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance for TO-220F Pb Free (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=3.8°C/W
Thermal Resistance

0.1
PD

0.01 Single Pulse Ton

T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for TO-220F Green (Note F)

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 Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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