AIKQ120N60CT

TRENCHSTOPTMSeries

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology
withsoft,fastrecoveryantiparallelEmitterControlleddiode

Features: C

•AutomotiveAEC-Q101qualified
•DesignedforDC/ACconvertersforAutomotiveApplication
•VerylowVCE(sat)1.5V(typ.)
•Maximumjunctiontemperature175°C
•Dynamicallystresstested G
•Shortcircuitwithstandtime5µs E
•100%shortcircuittested
•100%ofthepartsaredynamicallytested
•PositivetemperaturecoefficientinVCE(sat)
•LowEMI
•LowgatechargeQG
•Greenpackage
•Verysoft,fastrecoveryantiparallelEmitterControlledHE
diode
•TRENCHSTOPTMandFieldstoptechnologyfor600V
applicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-veryhighswitchingspeed

Applications:

•Maininverter
•Climatecompressor
•PTCheater
•Motordrives

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
AIKQ120N60CT 600V 120A 1.5V 175°C AK120DCT PG-TO247-3-46

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1

www.infineon.com 2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 2 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

MaximumRatings

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire IC 160.0 A
TC=135°C 120.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 480.0 A
Turn off safe operating area
- 480.0 A
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire IF 160.0 A
TC=124°C 120.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 480.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=150°C 5
PowerdissipationTC=25°C Ptot 833.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
1)
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,2)
Rth(j-c) - - 0.18 K/W
junction - case
Diode thermal resistance,2)
Rth(j-c) - - 0.30 K/W
junction - case
Thermal resistance
Rth(j-a) - - 40 K/W
junction - ambient

1)
Package not recommended for surface mount application
2)
Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet 3 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
VGE=15.0V,IC=120.0A
Collector-emitter saturation voltage VCEsat Tvj=25°C - 1.50 2.00 V
Tvj=175°C - 1.90 -
VGE=0V,IF=120.0A
Diode forward voltage VF Tvj=25°C - 1.65 2.05 V
Tvj=175°C - 1.60 -
Gate-emitter threshold voltage VGE(th) IC=1.90mA,VCE=VGE 4.1 4.9 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40 µA
Tvj=175°C - 3000 -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=120.0A - 75.0 - S
Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 7530 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 446 - pF
Reverse transfer capacitance Cres - 206 -
VCC=480V,IC=120.0A,
Gate charge QG - 772.0 - nC
VGE=15V
Short circuit collector current VGE=15.0V,VCC≤400V,
Max. 1000 short circuits IC(SC) tSC≤5µs - - A
846
Time between short circuits: ≥ 1.0s Tvj=150°C

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 33 - ns
Rise time tr VCC=400V,IC=120.0A, - 43 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=3.0Ω,RG(off)=3.0Ω, - 310 - ns
Fall time tf Lσ=63nH,Cσ=31pF - 33 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 4.10 - mJ
Turn-off energy Eoff diode reverse recovery. - 2.80 - mJ
Total switching energy Ets - 6.90 - mJ

Datasheet 4 V2.1
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AIKQ120N60CT

TRENCHSTOPTMSeries

DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 280 - ns
Diode reverse recovery charge Qrr VR=400V, - 3.50 - µC
IF=120.0A,
Diode peak reverse recovery current Irrm diF/dt=1100A/µs - 25.0 - A
Diode peak rate of fall of reverse
dirr/dt - -500 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 33 - ns
Rise time tr VCC=400V,IC=120.0A, - 51 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=3.0Ω,RG(off)=3.0Ω, - 355 - ns
Fall time tf Lσ=63nH,Cσ=31pF - 43 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 6.70 - mJ
Turn-off energy Eoff diode reverse recovery. - 4.10 - mJ
Total switching energy Ets - 10.80 - mJ

DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr Tvj=175°C, - 410 - ns
Diode reverse recovery charge Qrr VR=400V, - 10.80 - µC
IF=120.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 45.0 - A
Diode peak rate of fall of reverse
dirr/dt - -520 - A/µs
recoverycurrentduringtb

Datasheet 5 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

900 180

800 160

700 140

IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

600 120

500 100

400 80

300 60

200 40

100 20

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase Figure 2. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

360 360
VGE=20V VGE=20V

320 15V 320 15V

13V 13V
280 280
11V 11V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

9V 9V
240 240
8V 8V
200 7V 200 7V

6V 6V
160 160

120 120

80 80

40 40

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicaloutputcharacteristic Figure 4. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

Datasheet 6 V2.1
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AIKQ120N60CT

TRENCHSTOPTMSeries

360 3.0
Tj=25°C IC=38A
Tj=175°C IC=75A
320 IC=120A

VCE(sat),COLLECTOR-EMITTERSATURATION[A]
IC=150A
2.5
280
IC,COLLECTORCURRENT[A]

240 2.0

200
1.5
160

120 1.0

80
0.5
40

0 0.0
0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 5. Typicaltransfercharacteristic Figure 6. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

1000 1E+4
td(off)
tf
td(on)
tr

td(off)
tf
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]

td(on)
tr 1000

100

100

10 10
0 25 50 75 100 125 150 175 200 0 5 10 15 20 25
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 7. Typicalswitchingtimesasafunctionof Figure 8. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(inductiveload,Tj=175°C,VCE=400V, (inductiveload,Tj=175°C,VCE=400V,
VGE=15/0V,rG=3Ω,Dynamictestcircuitin VGE=15/0V,IC=120A,Dynamictestcircuitin
Figure E) Figure E)
Datasheet 7 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

1000 8
td(off) typ.
tf min.

VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(on) 7 max.
tr

6
t,SWITCHINGTIMES[ns]

100 4

10 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V, (IC=1,9mA)
IC=120A,rG=3Ω,DynamictestcircuitinFigure
E)

30 40
Eoff Eoff
Eon Eon
Ets 35 Ets
25
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

30

20
25

15 20

15
10

10

5
5

0 0
0 40 80 120 160 200 240 0 5 10 15 20 25
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 11. Typicalswitchingenergylossesasa Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(inductiveload,Tj=175°C,VCE=400V, (inductiveload,Tj=175°C,VCE=400V,
VGE=15/0V,rG=3Ω,Dynamictestcircuitin VGE=15/0V,IC=120A,Dynamictestcircuitin
Figure E) Figure E)
Datasheet 8 V2.1
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AIKQ120N60CT

TRENCHSTOPTMSeries

16 16
Eoff Eoff
Eon Eon
14 Ets 14 Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
12 12

10 10

8 8

6 6

4 4

2 2

0 0
25 50 75 100 125 150 175 200 300 400 500
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(inductiveload,VCE=400V,VGE=15/0V, (inductiveload,Tj=175°C,VGE=15/0V,
IC=120A,rG=3Ω,Dynamictestcircuitin IC=120A,RG=3Ω,Dynamictestcircuitin
Figure E) Figure E)

16
120V Cies
480V Coes
14 Cres
1E+4
VGE,GATE-EMITTERVOLTAGE[V]

12
C,CAPACITANCE[pF]

10

1000
8

100
4

0 10
0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge Figure 16. Typicalcapacitanceasafunctionof
(IC=120A) collector-emittervoltage
(VGE=0V,f=1MHz)

Datasheet 9 V2.1
2017-02-09
 AIKQ120N60CT

TRENCHSTOPTMSeries

1600 12
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

1400

tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10

1200

8
1000

800 6

600
4

400

2
200

0 0
12 14 16 18 20 10 11 12 13 14 15
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 17. Typicalshortcircuitcollectorcurrentasa Figure 18. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤400V,startatTj≤150°C) (VCE=400V,startatTj=25°C,Tjmax≤150°C)

0.1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

0.1

D=0.5 D=0.5
0.2 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
0.01 single pulse single pulse
0.01

i: 1 2 3 4 i: 1 2 3 4
ri[K/W]: 0.02686799 0.0369369 0.1151423 3.0E-3 ri[K/W]: 0.05464681 0.08604638 0.1607048 4.1E-3
τi[s]: 2.1E-4 1.6E-3 0.01573455 0.2126417 τi[s]: 2.1E-4 2.6E-3 0.01504089 0.2133931

0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 19. IGBTtransientthermalimpedanceasa Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidthfordifferentduty functionofpulsewidthfordifferentduty
cyclesD cyclesD
(D=tp/T) (D=tp/T)
Datasheet 10 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

800 12
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
700
10

Qrr,REVERSERECOVERYCHARGE[µC]
trr,REVERSERECOVERYTIME[ns]

Tj=25°C, IF = 120A
600 Tj=175°C, IF = 120A

8
500

400 6

300
4

200

2
100

0 0
500 700 900 1100 1300 1500 500 700 900 1100 1300 1500
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverytimeasafunction Figure 22. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE) (VR=400V,DynamictestcircuitinFigureE)

70 0
Tj=25°C, IF = 120A Tj=25°C, IF = 120A
Tj=175°C, IF = 120A Tj=175°C, IF = 120A

60
-200
Irr,REVERSERECOVERYCURRENT[A]

dIrr/dt,diodepeakrateoffallofIrr[A/µs]

50
-400

40

-600

30

-800
20

-1000
10

0 -1200
500 700 900 1100 1300 1500 500 700 900 1100 1300 1500
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverycurrentasa Figure 24. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V,DynamictestcircuitinFigureE) currentslope
(VR=400V,DynamictestcircuitinFigureE)
Datasheet 11 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

360 4.0
Tj=25°C IF=38A
Tj=175°C IF=75A
3.5 IF=120A
IF=150A
300

3.0

VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

240
2.5

180 2.0

1.5
120

1.0

60
0.5

0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 25. Typicaldiodeforwardcurrentasafunction Figure 26. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

Datasheet 12 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

Package Drawing PG-TO247-3-46

MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 4.90 5.10 0.193 0.201 DOCUMENT NO.
A1 2.31 2.51 0.091 0.099 Z8B00174295
A2 1.90 2.10 0.075 0.083
SCALE 0
b 1.16 1.26 0.046 0.050
b1 1.96 2.25 0.077 0.089
b2 1.96 2.06 0.077 0.081

0 5 5
c 0.59 0.66 0.023 0.026 7.5mm
D 20.90 21.10 0.823 0.831
D1 16.25 16.85 0.640 0.663
EUROPEAN PROJECTION
D2 1.05 1.35 0.041 0.053
D3 0.58 0.78 0.023 0.031
E 15.70 15.90 0.618 0.626
E1 13.10 13.50 0.516 0.531
E3 1.35 1.55 0.053 0.061
e 5.44 (BSC) 0.214 (BSC)
ISSUE DATE
N 3 3 13-08-2014
L 19.80 20.10 0.780 0.791
L1 - 4.30 - 0.169 REVISION
R 1.90 2.10 0.075 0.083 01

Datasheet 13 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 14 V2.1
2017-02-09
AIKQ120N60CT

TRENCHSTOPTMSeries

RevisionHistory
AIKQ120N60CT

Revision:2017-02-09,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-02-09 Data sheet created

Datasheet 15 V2.1
2017-02-09
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