AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

HighspeedfastIGBTinTRENCHSTOPTM5technology

FeaturesandBenefits: C
HighspeedF5technologyoffering:
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowgatechargeQG G
•Maximumjunctiontemperature175°C E
•Dynamicallystresstested
•QualifiedaccordingtoAEC-Q101
•Greenpackage(RoHScompliant)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•Off-boardcharger
•On-boardcharger
•DC/DCconverter
•Power-factorcorrection

1
Packagepindefinition: 2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
AIGW50N65F5 650V 50A 1.66V 175°C AG50EF5 PG-TO247-3

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1

www.infineon.com 2017-06-27
AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Datasheet 2 V2.1
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AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

MaximumRatings

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire IC 80.0 A
TC=100°C 53.5
Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 150.0 A
Turn off safe operating area
- 150.0 A
VCE≤650V,Tvj≤175°C,tp=1µs1)
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±30
PowerdissipationTC=25°C 270.0
Ptot W
PowerdissipationTC=100°C 136.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
2)
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,
Rth(j-C) - - 0.55 K/W
junction - case
Thermal resistance
Rth(j-a) - - 40 K/W
junction - ambient

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
VGE=15.0V,IC=50.0A
Tvj=25°C - 1.66 2.10
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.90 -
Tvj=175°C - 2.03 -
Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V
VCE=650V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40 µA
Tvj=175°C - 600 -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S

1)
Defined by design. Not subject to production test.
2)
Package not recommended for surface mount applications
Datasheet 3 V2.1
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AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 2800 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 51 - pF
Reverse transfer capacitance Cres - 11 -
VCC=520V,IC=50.0A,
Gate charge QG - 108.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 21 - ns
Rise time tr VCC=400V,IC=25.0A, - 12 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, - 156 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 6 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.49 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.14 - mJ
Total switching energy Ets - 0.63 - mJ

Turn-on delay time td(on) Tvj=25°C, - 19 - ns

Rise time tr VCC=400V,IC=6.0A, - 4 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, - 173 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 10 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.10 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.03 - mJ
Total switching energy Ets - 0.13 - mJ

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AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) Tvj=150°C, - 21 - ns
Rise time tr VCC=400V,IC=25.0A, - 14 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, - 191 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 5 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.68 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.25 - mJ
Total switching energy Ets - 0.93 - mJ

Turn-on delay time td(on) Tvj=150°C, - 18 - ns

Rise time tr VCC=400V,IC=6.0A, - 5 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, - 229 - ns
Fall time tf Lσ=30nH,Cσ=30pF - 12 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.18 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.06 - mJ
Total switching energy Ets - 0.24 - mJ

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AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

270 90

240 80

210 70

IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

180 60

150 50

120 40

90 30

60 20

30 10

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase Figure 2. Collectorcurrentasafunctionofcase
temperature temperature
(Tvj≤175°C) (VGE≥15V,Tvj≤175°C)

150 150

135 135

120 120
VGE = 20V VGE = 20V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

105 18V 105 18V

15V 15V
90 90
12V 12V

75 10V 75 10V

8V 8V
60 60
7V 7V

45 6V 45 6V

5V 5V
30 30

15 15

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicaloutputcharacteristic Figure 4. Typicaloutputcharacteristic
(Tvj=25°C) (Tvj=150°C)

Datasheet 6 V2.1
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Highspeedswitchingseriesfifthgeneration

150 2.50
Tvj=25°C IC=6.25A
Tvj=150°C IC=12.5A
135 IC=25A
2.25

VCEsat,COLLECTOR-EMITTERSATURATION[V]
IC=50A
120
2.00
IC,COLLECTORCURRENT[A]

105

1.75
90

75 1.50

60
1.25

45
1.00
30

0.75
15

0 0.50
4 5 6 7 8 9 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 5. Typicaltransfercharacteristic Figure 6. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

1000 1000
td(off) td(off)
tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]

100 100

10 10

1 1
0 30 60 90 120 150 5 15 25 35 45 55 65 75 85
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 7. Typicalswitchingtimesasafunctionof Figure 8. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(inductiveload,Tvj=150°C,VCE=400V, (inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic VGE=0/15V,IC=25A,dynamictestcircuitin
test circuit in Figure E) Figure E)
Datasheet 7 V2.1
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AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

1000 5.5
td(off) typ.
tf min.
5.0

VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(on) max.
tr

4.5
t,SWITCHINGTIMES[ns]

100 4.0

3.5

3.0

10 2.5

2.0

1.5

1 1.0
25 50 75 100 125 150 175 0 25 50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V, (IC=0.4mA)
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamictest
circuit in Figure E)

11 2.4
Eoff Eoff
10 Eon 2.2 Eon
Ets Ets

9 2.0
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

1.8
8
1.6
7
1.4
6
1.2
5
1.0
4
0.8
3
0.6

2 0.4

1 0.2

0 0.0
0 30 60 90 120 150 5 15 25 35 45 55 65 75 85
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 11. Typicalswitchingenergylossesasa Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V, (inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω, VGE=0/15V,IC=25A,dynamictestcircuitin
dynamic test circuit in Figure E) Figure E)
Datasheet 8 V2.1
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Highspeedswitchingseriesfifthgeneration

1.0 1.2
Eoff Eoff
Eon 1.1 Eon
0.9 Ets Ets
1.0
0.8
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
0.9
0.7
0.8

0.6
0.7

0.5 0.6

0.5
0.4

0.4
0.3
0.3
0.2
0.2

0.1
0.1

0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450 500
Tvj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(inductiveload,VCE=400V,VGE=0/15V, (inductiveload,Tvj=150°C,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E) test circuit in Figure E)

16
VCC=130V Cies
VCC=520V 1E+4 Coes
14 Cres
VGE,GATE-EMITTERVOLTAGE[V]

12
1000
C,CAPACITANCE[pF]

10

8
100

4
10

0 1
0 20 40 60 80 100 120 0 5 10 15 20 25 30
QG,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge Figure 16. Typicalcapacitanceasafunctionof
(IC=50A) collector-emittervoltage
(VGE=0V,f=1MHz)

Datasheet 9 V2.1
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 AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

1
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]

D = 0.5
0.2

0.1 0.1
0.05
0.02
0.01
single pulse

0.01

i: 1 2 3 4 5
ri[K/W]: 0.026138 0.118331 0.159109 0.181217 0.065204
τi[s]: 3.3E-5 2.5E-4 3.9E-3 0.044084 0.191225

0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)

Datasheet 10 V2.1
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AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

Package Drawing PG-TO247-3

Datasheet 11 V2.1
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AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 12 V2.1
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AIGW50N65F5

Highspeedswitchingseriesfifthgeneration

RevisionHistory
AIGW50N65F5

Revision:2017-06-27,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-06-27 Data sheet created

Datasheet 13 V2.1
2017-06-27
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InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2017.
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(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
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