IKW15N120CS7

Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft and fast recovery Emitter
Controlled 7 diode

Features
• VCE=1200 V
• IC=15 A
• IGBT co-packed with full current, soft and low Qrr diode
• Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C
• Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...)
• Short circuit ruggedness 8 µsec
• Wide range of dv/dt controllability
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
G
Potential applications C
E
• Industrial Drives
• Industrial Power Supplies
• Solar Inverters
Product validation
• Product Validation: Qualified for industrial applications according to the relevant tests of
JEDEC47/20/22

Description

G
E
Type Package Marking
IKW15N120CS7 PG-TO247-3 K15MCS7

Datasheet Please read the Important Notice and Warnings at the end of this document 1.00
www.infineon.com 2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
Table of contents

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Datasheet 2 1.00
2021-03-17
IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
1 Package

1 Package
Table 1 Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Internal emitter inductance LE 13.0 nH
measured 5mm. (0.197in)
from case
Storage temperature Tstg -55 150 °C
Soldering temperature wave soldering 1.6mm (0.063in.) from case 260 °C
for 10s
Mounting torque , M3 screw M 0.6 Nm
Maximum of mounting
process: 3
Thermal resistance, Rth(j-a) 40 K/W
junction-ambient

2 IGBT
Table 2 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Collector-emitter voltage VCE Tvj ≥ 25 °C 1200 V
DC collector current, limited IC TC = 25 °C 36 A
by Tvjmax
TC = 100 °C 25
Pulsed collector current, tp ICpuls 45 A
limited by Tvjmax
Turn-off safe operating area VCE ≤ 1200 V, Tvj ≤ 175 °C 45 A
Gate-emitter voltage VGE ±20 V
Transient gate-emitter VGE tp ≤ 0.5 µs, D < 0.001 ±25 V
voltage
Short circuit withstand time tSC VCC ≤ 600 V, VGE = 15 V, Allowed number of 8 µs
short circuits < 1000, Time between short
circuits ≥ 1.0 s, Tvj = 150 °C
Power dissipation Ptot TC = 25 °C 176 W
TC = 100 °C 88

Table 3 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Collector-emitter saturation VCE sat IC = 15.0 A, VGE = 15 V Tvj = 25 °C 1.65 2.00 V
voltage
Tvj = 175 °C 2.00

Datasheet 3 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
2 IGBT

Table 3 Characteristic values (continued)

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Gate-emitter threshold VGEth IC = 0.30 mA, VCE = VGE, Tvj = 25 °C 5.15 5.70 6.45 V
voltage
Zero gate voltage collector ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 40 µA
current
Tvj = 175 °C 1000
Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V 100 nA
Transconductance gfs IC = 15.0 A, VCE = 20 V, Tvj = 175 °C 6.5 S
Short circuit collector ISC VCC ≤ 600 V, VGE = 15 V, tSC ≤ 8 µs, Allowed 95 A
current number of short circuits < 1000 , Time
between short circuits ≥ 1.0 s, Tvj = 25 °C
Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 100 kHz 2.2 nF
Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 100 kHz 55 pF
Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 100 kHz 10 pF
Gate charge QG IC = 15.0 A, VGE = 15 V, VCE = 960 V 95 nC
Turn-on delay time tdon VCE = 600 V, VGE = 15 V, Tvj = 25 °C, 23 ns
RGon = 10.0 Ω, IC = 15.0 A
RGoff = 10.0 Ω
Tvj = 175 °C, 20
IC = 15.0 A
Rise time (inductive load) tr VCE = 600 V, VGE = 15 V, Tvj = 25 °C, 11 ns
RGon = 10.0 Ω, IC = 15.0 A
RGoff = 10.0 Ω
Tvj = 175 °C, 14
IC = 15.0 A
Turn-off delay time tdoff VCE = 600 V, VGE = 15 V, Tvj = 25 °C, 170 ns
RGon = 10.0 Ω, IC = 15.0 A
RGoff = 10.0 Ω
Tvj = 175 °C, 250
IC = 15.0 A
Fall time (inductive load) tf VCE = 600 V, VGE = 15 V, Tvj = 25 °C, 100 ns
RGon = 10.0 Ω, IC = 15.0 A
RGoff = 10.0 Ω
Tvj = 175 °C, 270
IC = 15.0 A
Turn-on energy Eon VCE = 600 V, VGE = 15 V, Tvj = 25 °C, 0.75 mJ
RGon = 10.0 Ω, IC = 15.0 A
RGoff = 10.0 Ω
Tvj = 175 °C, 1.15
IC = 15.0 A
Turn-off energy Eoff VCE = 600 V, VGE = 15 V, Tvj = 25 °C, 0.70 mJ
RGon = 10.0 Ω, IC = 15.0 A
RGoff = 10.0 Ω
Tvj = 175 °C, 1.60
IC = 15.0 A

Datasheet 4 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
3 Diode

Table 3 Characteristic values (continued)

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Total switching energy Ets VCE = 600 V, VGE = 15 V, Tvj = 25 °C, 1.45 mJ
RGon = 10.0 Ω, IC = 15.0 A
RGoff = 10.0 Ω
Tvj = 175 °C, 2.75
IC = 15.0 A
IGBT thermal resistance, Rthjc 0.65 0.85 K/W
junction-case
Operating junction Tvj -40 175 °C
temperature

3 Diode
Table 4 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Repetitive peak reverse VRRM Tvj ≥ 25 °C 1200 V
voltage
Diode forward current, IF TC = 25 °C 30 A
limited by Tvjmax
TC = 100 °C 20
Diode pulsed current, IFpuls 45 A
limited by Tvjmax
Power dissipation Ptot TC = 25 °C 100 W
TC = 100 °C 50

Table 5 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Diode forward voltage VF IF = 15.0 A Tvj = 25 °C 1.65 2.15 V
Tvj = 175 °C 1.60
Reverse leakage current IR VR = 1200 V Tvj = 25 °C 40 µA
Tvj = 175 °C 1000
Diode reverse recovery time trr VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C, 135 ns
IF = 15.0 A
Tvj = 175 °C, 265
IF = 15.0 A
Diode reverse recovery Qrr VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C, 0.87 µC
charge IF = 15.0 A
Tvj = 175 °C, 2.15
IF = 15.0 A

Datasheet 5 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
3 Diode

Table 5 Characteristic values (continued)

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Diode peak reverse recovery Irrm VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C, 15.4 A
current IF = 15.0 A
Tvj = 175 °C, 19.7
IF = 15.0 A
Diode peak rate off fall of dIrr/dt VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C, -140 A/µs
reverse recovery current IF = 15.0 A
Tvj = 175 °C, -85
IF = 15.0 A
Reverse recovery energy Erec VR = 600 V, RGon = 10.0 Ω Tvj = 25 °C, 0.25 mJ
IF = 15.0 A
Tvj = 175 °C, 0.75
IF = 15.0 A
Diode thermal resistance, Rthjc 1.10 1.50 K/W
junction-case
Operating junction Tvj -40 175 °C
temperature

Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Dynamic test circuit, parasitic inductance Lσ = 30 nH, Cσ = 8 pF

Datasheet 6 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams

4 Characteristics diagrams
Reverse bias safe operating area, IGBT Typical output characteristic, IGBT
IC = f(VCE) IC = f(VCE)
Tvj≤175 °C, VGE = 15 V Tvj = 25 °C
100 45

40

35

10 30

25

20

1 15

10

0.1 0
1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Typical output characteristic, IGBT Typical transfer characteristic, IGBT

IC = f(VCE) IC = f(VGE)
Tvj = 150 °C VCE = 20 V
45 45

40 40

35 35

30 30

25 25

20 20

15 15

10 10

5 5

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4 5 6 7 8 9 10 11 12

Datasheet 7 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams

Typical collector-emitter saturation voltage as a Gate-emitter threshold voltage as a function of

function of junction temperature, IGBT junction temperature, IGBT
VCEsat = f(Tvj) VGEth = f(Tvj)
VGE = 15 V IC = 0.85 mA
4.0 8

3.5
7
3.0

2.5
6

2.0

5
1.5

1.0
4
0.5

0.0 3
-50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150

Typical switching times as a function of collector Typical switching times as a function of gate resistor,
current, IGBT IGBT
t = f(IC) t = f(RG)
VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω IC = 15.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V
1000 1000

100 100

10 10

1 1
0 5 10 15 20 25 30 0 10 20 30 40 50 60 70 80

Datasheet 8 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams

Typical switching times as a function of junction Typical switching energy losses as a function of
temperature, IGBT collector current, IGBT
t = f(Tvj) E = f(IC)
IC = 15.0 A, VCE = 600 V, VGE = 0/15 V, RG = 10.0 Ω VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω
1000 6

100 4

10 2

1 0
25 50 75 100 125 150 175 0 5 10 15 20 25 30

Typical switching energy losses as a function of gate Typical switching energy losses as a function of
resistor, IGBT junction temperature, IGBT
E = f(RG) E = f(Tvj)
IC = 15.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V IC = 15.0 A, VCE = 600 V, VGE = 0/15 V, RG = 10.0 Ω
5 3.0

2.5
4

2.0
3

1.5

2
1.0

1
0.5

0 0.0
10 20 30 40 50 60 70 80 25 50 75 100 125 150 175

Datasheet 9 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams

Typical switching energy losses as a function of Typical gate charge, IGBT

collector emitter voltage, IGBT VGE = f(QGE)
E = f(VCE) IC = 15.0 A
IC = 15.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω
4.0 16

3.5 14

3.0 12

2.5 10

2.0 8

1.5 6

1.0 4

0.5 2

0.0 0
400 450 500 550 600 650 700 750 800 0 10 20 30 40 50 60 70 80 90 100

Typical capacitance as a function of collector-emitter Typical short circuit collector current as a function of
voltage, IGBT gate-emitter voltage, IGBT
C = f(VCE) IC(SC) = f(VGE)
f = 100 kHz, VGE = 0 V Tvj = 150 °C, VCC = 600 V
10000 80

70

1000 60

50

100 40

30

10 20

10

1 0
0 5 10 15 20 25 30 12.0 12.5 13.0 13.5 14.0 14.5 15.0

Datasheet 10 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams

Short circuit withstand time as a function of gate- IGBT transient thermal impedance, IGBT
emitter voltage, IGBT Zth = f(tp)
tSC = f(VGE) D = tp/T
Tvj≤150 °C, VCC = 600 V
14 1

12

0.1
10

8
0.01
6

4
0.001

0 0.0001
12.0 12.5 13.0 13.5 14.0 14.5 15.0 1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 1

Diode transient thermal impedance as a function of Typical diode forward current as a function of forward
pulse width, Diode voltage, Diode
Zth = f(tp) IF = f(VF)
D = tp/T
10 45

40

1
35

30
0.1
25

20
0.01
15

0.001 10

0.0001 0
1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0

Datasheet 11 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams

Typical diode forward voltage as a function of Typical diode current slope as a function of gate
junction temperature, Diode resistor, Diode
VF = f(Tvj) diF/dt = f(RG)
IC = 15.0 A, VCE = 600 V, VGE = 0/15 V
3.00 1200

2.75

2.50 1000

2.25

2.00 800

1.75

1.50 600

1.25

1.00 400

0.75

0.50 200
-50 -25 0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80

Typical reverse recovery time as a function of diode Typical reverse recovery charge as a function of diode
current slope, Diode current slope, Diode
trr = f(diF/dt) Qrr = f(diF/dt)
VR = 600 V, IF = 15.0 A VR = 600 V, IF = 15.0 A
450 3.0

400
2.5

350
2.0

300
1.5
250

1.0
200

0.5
150

100 0.0
200 300 400 500 600 700 800 900 1000 1100 200 300 400 500 600 700 800 900 1000 1100

Datasheet 12 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
4 Characteristics diagrams

Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery
current slope, Diode current as a function of diode current slope, Diode
Irr = f(diF/dt) dIrr/dt = f(diF/dt)
VR = 600 V, IF = 15.0 A VR = 600 V, IF = 15.0 A
20.0 0

-20
17.5

-40

15.0
-60

12.5 -80

-100
10.0

-120

7.5
-140

5.0 -160
200 300 400 500 600 700 800 900 1000 1100 200 300 400 500 600 700 800 900 1000 1100

Typical reverse energy losses as a function of diode

current slope, Diode
Erec = f(diF/dt)
VR = 600 V, IF = 15.0 A
1.0

0.8

0.6

0.4

0.2

0.0
200 300 400 500 600 700 800 900 1000 1100

Datasheet 13 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
5 Package outlines

5 Package outlines

Package Drawing PG-TO247-3

MILLIMETERS
DIMENSIONS
MIN. MAX.
A 4.70 5.30
A1 2.20 2.60
A2 1.50 2.50
b 1.00 1.40
b1 1.60 2.41 DOCUMENT NO.
b2 2.57 3.43 Z8B00003327
c 0.38 0.89 REVISION
D 20.70 21.50 06
D1 13.08 17.65
D2 0.51 1.35 SCALE 3:1
E 15.50 16.30 0 1 2 3 4 5mm
E1 12.38 14.15
E2 3.40 5.10
E3 1.00 2.60 EUROPEAN PROJECTION
e 5.44
L 19.80 20.40
L1 3.85 4.50
P 3.50 3.70
Q 5.35 6.25 ISSUE DATE
S 6.04 6.30 25.07.2018

Figure 6

Datasheet 14 1.00
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IKW15N120CS7
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
6 Testing conditions

6 Testing conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Figure 7

Datasheet 15 1.00
2021-03-17
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Edition 2021-03-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
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characteristics (“Beschaffenheitsgarantie”).
WARNINGS
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in question please contact your nearest Infineon
hereby disclaims any and all warranties and liabilities
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