SP07-Lecture9-Frequency Response-MOS Only

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Chapter 11 Frequency Response

EE105 - Spring 2007 ƒ 11.1 General Considerations


Microelectronic Devices and ƒ 11.2 High-Frequency Models of Transistors
Circuits ƒ 11.3 Frequency Response of CS Stages
ƒ 11.4 Frequency Response of CG Stages
ƒ 11.5 Frequency Response of Followers
Lecture 9
Frequency Response ƒ 11.6 Frequency Response of Cascode Stage
ƒ 11.7 Frequency Response of Differential Pairs

High Frequency Roll-off of Amplifier Gain Roll-off Thru CL

⎛ 1 ⎞
− g mVin ⎜ RD || ⎟ = Vout
⎝ CL s ⎠

ƒ The capacitive load, CL, is the culprit for gain roll-off


ƒ As frequency of operation increases, the gain of since at high frequency, it will “steal” away some signal
amplifier decreases. This chapter analyzes this current and shunt it to ground.
problem.
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Frequency Response of the CS Stage Example: Figure of Merit

Vout g m RD 1
= F .O.M . =
Vin RD2 CL2ω 2 + 1 VT VCC CL

ƒ This metric quantifies a circuit’s gain, bandwidth, and


ƒ At low frequency, the capacitor is effectively open and the gain is
flat. As frequency increases, the capacitor tends to a short and power dissipation. In the bipolar case, low temperature,
the gain starts to decrease. A special frequency is ω=1/(RDCL), supply, and load capacitance mark a superior figure of
where the gain drops by 3dB. merit.
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Bode Plot Example: Bode Plot

⎛ s ⎞⎛ s ⎞
⎜1 + ⎟ ⎜1 + ⎟L
ω ω
H ( s ) = A0 ⎝ z1 ⎠ ⎝ z2 ⎠

⎛ s ⎞⎛ s ⎞
⎜⎜1 + ⎟⎟ ⎜⎜ 1 + ⎟⎟L
⎝ ω p1 ⎠⎝ ω p 2 ⎠

1
ƒ When we hit a zero, ωzj, the Bode magnitude rises with ω p1 =
a slope of +20dB/dec. RD CL
ƒ When we hit a pole, ωpj, the Bode magnitude falls with a ƒ The circuit only has one pole (no zero) at 1/(RDCL), so
slope of -20dB/dec the slope drops from 0 to -20dB/dec as we pass ωp1.
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Pole Identification Example I Pole Identification Example II

1
1 1 ω p1 = 1
ω p1 = ωp2 = ⎛ 1 ⎞ ω p2 =
RS Cin RD CL ⎜ RS || ⎟ Cin RD CL
⎝ g m ⎠

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Circuit with Floating Capacitor Miller’s Theorem

ZF ZF
ƒ The pole of a circuit is computed by finding the effective Z1 = Z2 =
resistance and capacitance from a node to GROUND. 1 − Av 1 − 1/ Av
ƒ The circuit above creates a problem since neither ƒ If Av is the gain from node 1 to 2, then a floating
terminal of CF is grounded. impedance ZF can be converted to two grounded
impedances Z1 and Z2.
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Miller Multiplication Example: Miller Theorem

1 1
ƒ With Miller’s theorem, we can separate the floating ωin = ωout =
capacitor. However, the input capacitor is larger than RS (1 + g m RD ) CF ⎛ 1 ⎞
RD ⎜1 + ⎟ CF
the original floating capacitor. We call this Miller ⎝ g m RD ⎠
multiplication.
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MOS Intrinsic Capacitances Gate Oxide Capacitance Partition and Full Model

ƒ The gate oxide capacitance is often partitioned between


ƒ For a MOS, there exist oxide capacitance from gate to
source and drain. In saturation, C2 ~ Cgate, and C1 ~ 0.
channel, junction capacitances from source/drain to
They are in parallel with the overlap capacitance to form
substrate, and overlap capacitance from gate to
CGS and CGD.
source/drain.
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Example: Capacitance Identification Transit Frequency

gm gm
2π fT = 2π fT =
Cπ CGS
ƒ Transit frequency, fT, is defined as the frequency where
the current gain from input to output drops to 1.
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Unified Model for CE and CS Stages Unified Model Using Miller’s Theorem

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Direct Analysis of CE and CS Stages Example: CE and CS Direct Analysis

gm
| ω z |=
C XY
1
| ω p1 |=
(1 + g m RL ) C XY RThev + RThevCin + RL ( C XY + Cout )
| ω p 2 |=
(1 + g m RL ) C XY RThev + RThevCin + RL ( C XY + Cout ) 1
RThev RL ( CinC XY + Cout C XY + CinCout ) ω p1 ≈
⎡⎣1 + g m1 ( rO1 || rO 2 ) ⎤⎦ C XY RS + RS Cin + ( rO1 || rO 2 ) (C XY + Cout )

⎡1 + g m1 ( rO1 || rO 2 ) ⎤⎦ C XY RS + RS Cin + ( rO1 || rO 2 ) (C XY + Cout )


ƒ Direct analysis yields different pole locations and an ωp2 ≈ ⎣
RS ( rO1 || rO 2 )( CinC XY +Cout C XY + CinCout )
extra zero.
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Input Impedance of CE and CS Stages Frequency Response of CG Stage


1
ω p, X =
⎛ 1 ⎞
⎜ S
R || ⎟ CX
⎝ gm ⎠
C X = CGS + CSB

1
ω p ,Y =
RDCY
rO = ∞ CY = CGD + CDB
1 1
Zin ≈ || rπ Zin ≈
⎡⎣Cπ + (1+ gmRC ) Cμ ⎤⎦ s ⎡⎣CGS + (1+ gmRD ) CGD ⎤⎦ s ƒ Similar to a CB stage, the input pole is on the order of
fT, so rarely a speed bottleneck.
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Example: CG Stage Pole Identification Emitter and Source Followers

1 1
ƒ The following will discuss the frequency response of
ω p, X = ω p ,Y = emitter and source followers using direct analysis.
⎛ 1 ⎞ 1
( CDB1 + CGD1 + CGS 2 + CDB 2 )
⎜ RS || ⎟ ( CSB1 + CGS 1 )
⎝ g m1 ⎠ gm2 ƒ Emitter follower is treated first and source follower is
derived easily by allowing rπ to go to infinity.
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Direct Analysis of Source Follower Stage Example: Source Follower

C GS
1+ s
Vout gm
= 2
Vin as + bs + 1

RS
CGS
1+s a= ( CGDCGS + CGDCSB + CGS CSB ) a=
RS
[C GD1C GS 1 + (C GD1 + C GS 1 )(C SB1 + C GD 2 + C DB 2 ) ]
Vout gm gm g m1
= C + CSB C + C SB 1 + C GD 2 + C DB 2
Vin as 2 + bs + 1 b = RS CGD + GD b = R S C GD 1 + GD 1
g m1
gm
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Input Capacitance of Emitter/Source Follower Example: Source Follower Input Capacitance

rO = ∞

Cπ CGS 1
Cin = Cμ + Cin = CGD + Cin = CGD1 + CGS 1
1 + g m RL 1 + g m RL 1 + g m1 ( rO1 || rO 2 )

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Output Impedance of Source Follower Active Inductor

VX RS CGS s + 1 ƒ The plot above shows the output impedance of emitter and
= source followers. Since a follower’s primary duty is to lower the
I X CGS s + g m driving impedance (RS>1/gm), the “active inductor” characteristic
on the right is usually observed.
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Example: Output Impedance Frequency Response of Cascode Stage

rO = ∞

− g m1
VX ( rO1 || rO 2 ) CGS 3 s + 1 Av , XY = ≈ −1 C x ≈ 2C XY
= gm2
IX CGS 3 s + g m 3 ƒ For cascode stages, there are three poles and Miller
multiplication is smaller than in the CE/CS stage.
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Poles of MOS Cascode MOS Cascode Example


1
ω p,X = 1 ω p,X =
1
1
⎡ ⎛ g ⎞ ⎤ ω p , out = ⎡ ⎛ ⎞ ⎤ ω p , out =
R L ( C DB 2 + C GD 2 ) R L ( C DB 2 + C GD 2 )
g
R S ⎢ C GS 1 + ⎜ 1 + m 1 ⎟ C GD 1 ⎥ R S ⎢ C GS 1 + ⎜ 1 + m1 ⎟ C GD 1 ⎥
⎣ ⎝ g m2 ⎠ ⎦ ⎣ ⎝ g m2 ⎠ ⎦

1
ω p ,Y =
1 ⎡ ⎛ gm2 ⎞ ⎤ 1
⎢ C DB1 + C GS 2 + ⎜ 1 + ⎟ C GD1 ⎥ ω p ,Y =
gm2 ⎣ ⎝ g m1 ⎠ ⎦ 1 ⎡ ⎛ gm2 ⎞ ⎤
⎢ C DB1 + C GS 2 + ⎜ 1 + ⎟ C GD1 + C GD 3 + C DB 3 ⎥
gm2 ⎣ ⎝ g m1 ⎠ ⎦
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I/O Impedance of MOS Cascode MOS Differential Pair Frequency Response

1
Z in = Z out = RL ||
1
⎡ ⎛ g m1 ⎞ ⎤ ( CGD 2 + CDB 2 ) s ƒ Since MOS differential pair can be analyzed using half-
⎢CGS 1 + ⎜1 + ⎟ CGD1 ⎥ s
⎣ ⎝ gm2 ⎠ ⎦ circuit, its transfer function, I/O impedances, locations
of poles/zeros are the same as that of the half circuit’s.
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Example: MOS Differential Pair


1
ω p, X =
RS [CGS 1 + (1 + g m1 / g m 3 )CGD1 ]
1
ω p ,Y =
1 ⎡ ⎛ g m3 ⎞ ⎤
⎢ C DB1 + CGS 3 + ⎜ 1 + ⎟ CGD1 ⎥
gm3 ⎣ ⎝ g m1 ⎠ ⎦
1
ω p ,out =
RL ( C DB 3 + CGD 3 )

39

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