Effects of the GIS Parameters on Very Fast Transient Overvoltages

Dr. S. A. Qureshi Dr. T. A. Shrmi

(U.E.T, Pakistan) (U.E.T, Pakistan)

ABSTRACT recommends the values of spacers by their equivalent capacitances in the

Although it has been observed that Gas Insulated substation (GIS) are more
reliable than open air substations, there is concern that switching operations
pcrformed within GIS at voltage levels higher than 300 KV may result in
anomalous failure within GIS and of connected plant. This is attributed to
the generation of very fast transients during switching operations of load
break switches, circuit breakers and especially disconnectors in GIs. The
reported failures are insulation failure in GIs, bushing failure, insulation
faults in transformer and malfunctioning of associated devices, e.g relays.
Very Fast Transient Overvoltages (VFTO) developed in the different parts
of GIS are the main subject of study for a number of researchers. It is
observed, fiom the published and unpublished papers that the magnitude and
fiquency (pattern) of the voltages developed in different parts of the GIs,
under fault conditions, depends on the equipment connected in the GIs. The
presence and location of the equipment such as, transformers, cables,
reactors, circuit breakers, spacers, lightning arresters, bushing,
disconnectors and sectionalizers, are important as far as the shape
(magnitude & frequency) of the voltage developed in different parts of the
GIS is concemed. In order to cdculate the voltages developed in GIs, it is
veIy important to translate the behaviour of these elements of the GIS into
their equivalent precise models. To obtain reliable results from the
calculation techmques, it is important to have an accurate or at least
reasonably equivalent model for each element of the GIs. It is also
important to know that there are some other parameters, such as arc
resistance and spark collapse time, which should be included into the
analysis in order to get accurate results. A typical GIS, shown in fig: 1,
consisting of seventeen Busbar sections, eighteen spacers, one GIS bushing
and one transformer, is considered and different studies are performed by
simulation of fault by injecting a unit-step input voltage signal at a certain
point in the GIs.
The studies which are reported in the paper describes the effects of
following GIS parameters on the first peak & maximum values (magnitude
and time of its occurrence) of the voltages, at certain point within the GIS,
and on the rate of rise of the voltages;
range of 4 to 30pF. The normal values of equivalent spacer capacitances,
CN, are varied to different values, as shown in Table 1
These new values of capacitances are referred to "CX" Variation in
different bench mark points (i.e. First peak and maximum peak values), for
different set of values of spacer simulated capacitances, of the voltage
"VOC"and "VTR" are shown in fig: 2 and fig. 3, respectively.
In order to observe the variation in the steepness (i.e. dv/dt) of the voltages
(VOC & VTR) with the variation in the spacer simulated equivalent set of
values of the capacitances, two pomts are decided on the voltage
waveforms: one is 10% and other is 90% of the first peak value of the
voltages.
The variation in the rate of rise of the voltages "VOC" and "VTR',
with the
variation in the spacer simulation are shown in fig: 4 and fig: 5,
respectively.
INCLUSION AND VARIATION OF ARCRESISTANCE
It is very important to include the arc resistance into the consideration, while
performing Fast Transient analysis in GIS. A number of different research
paper~[~l~,5.61are consulted for finding out different models/values of arc
resistance to be included in our studies.
According to one of the re~earch,[~,~l arc resistance is a time variant quantity
and according to another ~tudyl3,~1 a constant values of In to loa can also
be assigned to simulate the arc resistance. In order to observe the affect of
the arc resistance on the voltages developed in different parts of GIs, The
values of arc resistance (Rare) is varied as shown in Table. 2.

I -Effects of variation of spacer simulation on the VFTO. Table 2

2-Effects of inclusion and variation of arc resistance on the VFTO.
>-Effects of inclusion & variation of spark collapse time on the W O .

GENERAL

The study of the effects of variation of different GIS parameters, is The inclusion of the arc resistance in the FFT program['] is very simple, we
performed on a typical GIS, shown in fig: 1 . The voltages "VOC" and only insert a resistance "R,," in series with the circuit. shown in fig: 6
"VTR, corresponds to the voltage developed at open circuit (i.e. at node-10,
in fig: 1)and transformer terminal voltage (at node-20, fig: l), respectively,
are observed for different studies mentioned in the abstract.

All the studles are performed and result are observed with the help of a
program based on FFT (Fast Founer Transform) technique [ I ] During the
studies the term "CN" corresponds to the spacers equivalent capacitances,
connected at different nodes, in the GIS layout shown m fig 1

VARIATION OF SPACER SIMULATION CAPACITOR VALUES

II
Accordmg to the typical GIS. shown in fig 1, spacers are modeled by FIG 6: EQUIVALENT CIRCUIT OF GIS LAYOUT(Rg: 1).
(ARC RESISTANCE INCLUSION)
equivalent capacitors with the values in the range of 23pF to 46pF
depending on the location within the GIS In fact these values are based on
the recommendationgiven in different research papers IZ 4,51 Which

0-7803-1772-6/94/$3.00 @ 1994 IEEE 960

Variation of different observation points (first and maximum peak values).
for the different values of arc resistance, of the voltages "VOC" and "VTR",
are shown in fig 7 and fig 8, respectively
The variation in the rate of rise of the voltages (dVOC/dt & dVTRfdt), with
variation in the values of the arc resistance, are shown in fig 9 and fig I O
INCLUSION AND VARIATION OF SPARK COLLAPSE TIME
Spark collapse time is the time required for the formation of a conducting
spark channel after a breakdown channel has been connected with the
contacts. During disconnection operation, in CIS. a great number o f pre-or
restrikes occur because of the slow speed of the disconnector moving
contact. Due to the very fast voltage collapse within few nanoseconds. in the
GIs. travelling surges are generated. The statistical time lag to discharge
inception is extremely short.
A number of references[',3,41 are again consulted in order to find out an
appropriate model for inclusion and variation of spark collapse time. Spark
collapse time is included in our study by injecting modified unit-ramp
voltage signal.lil at the point of fault, instead of injecting unit-step voltage
signal, as we have used in the previous studies
The mathematical formulation of the modified unit-ramp (MUR) signal
the time domain:['!
REFERENCES
S , A. Qureshi, "Calculation ofFo.st Transient in Gas Insulated
Substations"; Ph D. Thesis, UMIST. Manchester, UK. 1993
Alvison, et-al. "Very Fast Phenomenon As,sociated with Gas Insulated
Substations" CIGER Report. 33/13-09. 1989.
S. Yanabu, H. Murase, H. Aoyagi, "Estimation qfFast Transient
Overvoltages in Gas Insulated Suhstations", IEEE Transactions on
Power Delivery Vol. 5: No. 4, Nov. 1990.
W. Boeck, R. Witzmann, "MainInfluences on The Fast Transients
Development in Gas Insulated Suhstation". 5th International
Symposium on High Voltage Engineering, Braunschweig,Aug. 1987
S. Ogawa, E Hasginomori, S. Nishiwaki, T. Yoshida. K. Terasaka,
".Estimationof Restriking Transient Overvoltage on Disconnecting
Switch.fhr GIS'. IEEE Trans on Power Systems, Vol. PWRD-I. No 2,
April 1986
[6 ] 1 Uglesic, "A Mathematical model of the On-site Testing of GIs', 6th
Intemational Symposium on High Voltage Engineering, New
in ORLEANS, LA, USA, Sept 1989

t (t-x)
VlNT =-u(t)--u(t -x)
Y s

The frequencv domain representation of the above equation is,

GIS SUBSTATION LAYOUT

Where ' X I is the me-time of the ramp function I n order to observe the
effects of varying the spark collapse time, on the voltages "VOC" and
''VTR',

The foilowing different spark collapse time (Tsp = x) are selected. the
different valucs of Tsp are shown in Table 3
Table 3

The variation in the different observation points, as decided earlier. are

shown in fig: 11 B fig: 12.

The variation in the rate of rise of the voltages "VOC" & "VTR". for
different values o f spark collapsc time, are shown in fig 13 & fig: 14.

CONCLUSIONS
It is concluded that;

1.0 The accurate modelling of the different GIS parameters (such as

spacers. arc resistance and spark collapse time) is very important in order FIG: 1 A TYPICAL GIS SUBSTATION LAYOUT.
to obtain accurate results from the calculation of the Fast Transients in CIS.

2 0 In accurate modelling of GIS paramerter results in accurate values of

the peak and the rate of rise of the voltages at different locations in the GIS

3.0 It is also important to include all clcmeiits of GIS (such as spacers. arc
resistance and spark collapse time) in the calculation of the Fast Transients
in GIs, in ordcr to obtain accurate results.

96 1
 VARIATION I N VOLTAGE VOC VARIATION I N d V T R / d t
WlTH VARIATION IN SPACER SIMUUTION WlTH VARIATION IN SPACER SIMULATION

VOLTAGE VOC (PU)

&/ .22.6 .

2.4

2.2
U=NEW CAPA-NCB VAL-
216L \
M= MULTIFUCA" OF CN

I
2
0 2 4 6 8 IO 12 0 2 4 8 8 10 I2
H (CX=H*CN) Y (C=H*W)
Fig: 5 VAFUATION m PATE OF ~ 1 9 8w IUS VOLTACEv m
Fig: 2 VARIATION OF D l m m OmIZWATlON POINTS OF VOC
Rlll TRE VARlbllON IN 'IBE SPACBR S n n n n T I O N S .
mR D"T SP- 9wldrl10w9.
~~

VARIATION I N VOLTAGE VTR VARIATION I N VOLTAGE VOC

WITH VARIATION IN SPACER SIMULATION
WlTH VARIATION IN ARC RESISTANCE

VOLTAGE VTR (PU) VOLTAGE(PU)

1.5 -

11
0 6 10 IS w

Y (C=H*CN)
Fig: 3 VAFUAllON OF DIR%RENT OBSBRYATION POIw19 OF W
POR D M SPACER SIYUULTIONS.

VARIATION I N d V O C / d t VARIATION IN VOLTAGES VTR

WlTH VARIATION I N SPACER SIMULATION WlTH VARIATION IN ARC RESISTANCE

VOLTAGE(PU)
'r

80 I \
\\
70-

w-

- 0
M

4
0 2 4 6 a 10 I2
0.5-
0 €8 10
-
15 Po
Y (C=M'CN) RESISTANCE( OHMS)
Fig: 4 VARIAllON IN lulB OF RI.¶ OF l l i E VOLTACB VOC Fig: 8 VARIATION OP DIM O-ATION pomm w WR
m
WITHTHE VARIA~ON m SPACEI SIMULA~ONS. mR M ~ " T ARC ~ O vuum. I

962
 VARIATION I N d V O C / d t VARIATION I N VOLTAGE VTR
WITH VARIATION IN ARC RESISTANCE WITH VARIATION IN SPARK COLIAPSE TIME

v)
5 10 15 m 0 5 IO 15 m
S P m K COUU'SE TIYE (nu)
ARC RESISTANCE(0HMS) Fig: 12 VARUTION OF DlABRSNT ORSBRYAIION POINTS OF v1R
l'lg '1 VARUllON IN IAE PATB OF RISE OF TUE VOLTACE VOC mu DIFPSRBNT SPARK w- num.
- mm TUB v m u n o N IN IAB ARC Rmmmm.

VARIATION I N d V O C / d t
VARIATION I N d V T R / d t WITH VARIATION IN SPARK COLLAPSE TIME
WITH VARIATION IN ARC RESISTANCE

80 I
0 15 m 0 5 IO 15 m
SPARK COILAPSE TUCt (M)
Fig 13 I MB RATE OF RISE OP IAE VOLT-
V m U I I O N IN A Voc
?
m
_ . THE v m u n o N IN THE SPARK m u m n u m .

VARIATION I N VOLTAGE VOC VARIATION IN d V T R / d t

WITH VARIATION IN SPARK COLLAPSE TIME WITH VARIATION IN SPARK C O W S E TIME

YO1 TACEXFII) */dl (pU/pS

IQQ T

50 I
0 5 IO 15 M 0 5 IO 15 20
SPARK COLuIFSe TIME (ns) SPARK COUAPSE "ME (m)
Fig: I I V m A T I O N OF DIFWRENT OBSgRY*IION W l N T S OF VOC Fig: l 4 IAB PA18 OF RISE OF IAE VOLTACE YIR
I VARIATION IN
mu DIWPBRSNTSPARK muApss num. m THE v m u n o N m IAB SPARKm- num.

963