IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, VOL. 62, NO.
3, JUNE 2020
A New Compact, Stable, and Dual-Band Active
Frequency Selective Surface with Closely
Spaced Resonances for Wireless Applications
at 2.4 and 2.9 GHz
Samuel B. Paiva , Student Member, IEEE, Valdemir P. Silva Neto, Member, IEEE,
and Adaildo Gomes D’Assunção , Life Member, IEEE
Abstract—This paper presents a dual-band active frequency
selective surface (AFSS) with closely spaced bands and angular
stability for wireless applications at 2.4 and 2.9 GHz. The proposed
AFSS element geometry is composed of a slotted cross dipole com-
bined with four ring patches, where the diameter of the ring patches
at the top of the geometry is 1.618 times greater than the diameter
of the ones at the bottom. The choice of this multiplying factor,
used to define the geometry of the proposed patch element, is based
on the Fibonacci sequence of numbers. In addition, to perform
frequency reconfiguration, two p-i-n diode switches are used, which
are placed at the input of the ring patches placed at the top of
the AFSS element geometry. The AFSS simulation is performed
using Ansoft HFSS software and using generalization of the WCIP,
i.e., GWCIP, method. The simulated results are compared with the
experimental ones for validation purpose. A very good agreement
is observed between the simulated and measured results.
Index Terms—Active frequency selective surface (AFSS), closely
spaced bands, Fibonacci number, frequency selective surface (FSS)
reconfiguration, generalization of the WCIP method (GWCIP),
p-i-n diodes.
I. INTRODUCTION
FREQUENCY selective surface (FSS) is defined as a two-
A dimensional (2-D) finite periodic array of metallic patches,
or (etched) apertures in a very thin metallic plate, placed on a
dielectric substrate that behaves as a microwave spatial filter with
reflection or transmission frequency bands [1]. This device has
attracted the attention of researchers worldwide because of their
low profile, low cost, ease of fabrication, and many applications
[2]–[4].
In passive FSSs, the electromagnetic characteristics remain
unchanged after fabrication [1], [5], whereas in active FSSs
Manuscript received October 23, 2018; revised February 14, 2019; accepted
March 23, 2019. Date of publication August 7, 2019; date of current version June
11, 2020. This work was supported in part by CNPq under Grant 573939/2008-0
(INCT-CSF) and in part by UFRN. (Corresponding author: Adaildo Gomes
D’Assunção.)
The authors are with the Federal University of Rio Grande do Norte,
Natal 59078-970, Brazil (e-mail: samuel.b.paiva@hotmail.com; vpraxedes.
neto@gmail.com; adaildo@ymail.com).
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TEMC.2019.2918568
This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/
691
(AFSSs) the use of microwave devices such as p-i-n diodes
and varactors enable changes in the frequency response of
the reflection and transmission coefficients [6], increasing their
applications possibilities in wireless communication systems,
for example.
In modern telecommunication systems, due to the great evo-
lution in multimode, multiband, and multifunctional systems,
it is necessary to use AFSSs with operating bands that can be
actively modified by external excitation, such as direct voltage,
electric/magnetic field, or optical source [5].
The AFSS structures have been widely used in radars and
communication systems due to their capability to change their
resonant transmission frequencies in real time [7], [8]. This
feature has been used to develop tunable or reconfigurable
microwave spatial filters, radomes, and absorbers. Switchable
and tunable AFSSs have been fabricated using different unit
cell geometries with active embedded control devices [7], [9].
The use of active devices such as p-i-n diodes, varactor diodes,
and Schottky diodes in FSS designs is quite advantageous due
to the characteristics of high switching speed, compact size, and
low cost. These devices are used in FSS designs to achieve elec-
trically controlled reconfigurable properties such as switching,
tuning, and polarizing [5].
Lately, the properties of dual-band AFSSs have been exten-
sively investigated for applications in simultaneous or switched
communication links [7], [10]. Recently, dual-band AFSS
have been used in several applications where channels are
closely spaced, such as military systems, missiles, ships, and
simultaneous communications with different transceivers [7],
[11]–[15].
Lately, several techniques have been used to decrease the
FSS’s frequency ratio (FR), relating the second resonant fre-
quency to the first one. For example, in [7], the use of two
concentric ring slots enabled to develop an FSS with FR = 1.14.
In [11], by using a dual-cylinder 3-D FSS, the authors fabricated
a prototype that reached an FR value equal to 0.98. In [16], by
using periodic cells constituted by double square loops with
different capacitive loadings, an FR value of 1.36 was reached.
The use of convoluted geometries enabled to get an FR value of
1.2 in [17].
692 IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, VOL. 62, NO. 3, JUNE 2020
Fig. 1. Unit cell of the proposed AFSS structure.
In [18], an FSS was fabricated with a unit cell that was
composed of metallic patches connected with lumped inductors
and capacitively loaded square loop aperture resonators, printed
on both sides of the FSS dielectric layer, with the FR equal to
1.35.
In [19], a structure with a Faraday cage was used to eliminate
the undesired coupling between the FSS unit cells with the FR
= 1.4. In [20], a multistage design procedure was used, with
FR = 1.35.
In [21], 2-D compact U-shaped in slot resonators were used
in each FSS unit cell for close spacing bands response, with the
FR = 1.08. In [22], an FSS FR of 1.06 was provided using a unit
cell composed of four identical elements. A value of FR = 1.41
was achieved in [23]. In this paper, the value of FR = 1.2 was
obtained using a geometry that consisted of the combination of a
slotted cross dipole and four ring patches, in which two of these
ring patches were greater than the other two by a scale factor
of about 1.618, which is the Fibonacci number discussed in this
paper.
II. AFSS DESIGN
The Fibonacci series is a sequence of numbers, which appears
in various nature phenomena. It was described in the late 12th
century by the Italian mathematician Leonardo Fibonacci. It
has numeral 1 as the first term of the order, and the following
numbers are always the sum of its two predecessors, and so on to
infinity, i.e., 1, 1, 2, 3, 5, 8, 13, 21, 34, 55 … Analyzed only from
the mathematical point of view, it is nothing more than a simple
organization of numerals. However, its intrinsic connection with
nature phenomena is what makes it so special.
The Fibonacci number is approximately 1.618. It is obtained
by dividing a sequence number with its antecedent. The further
you advance in the series, the more the division between a
number and its antecedent approaches 1.618. This number was
used in defining the element geometry of the proposed AFSS to
obtain closely spaced resonances.
The proposed AFSS structure element is shown in Fig. 1 and
is constituted by a combination of a slotted cross dipole and four
ring patches. The size of the two identical upper ring patches is
about 1.618 larger than the size of the two identical lower ring
patches.
In Fig. 1, the slotted cross-dipole dimensions of the patch
element are: width 0.32 mm, length 3.11 mm, and gap 0.42 mm.
Fig. 2. Proposed AFSS patch element geometry with two p-i-n diode switches
placed on the upper ring patches.
In addition, the upper ring patches’ diameters are 7.25 mm
(outer) and 5.31 mm (inner), while the lower ring patches’ di-
ameters are 4.47 mm (outer) and 3.23 mm (inner). Furthermore,
the unit cell periodicities Tx and Ty , along the x-axix and y-
axis, are 21 and 18 mm long, respectively. An FR-4 substrate
is used with relative permittivity εr = 4.4, loss tangent tanδ =
0.02, and thickness h = 1.57 mm.
Thereafter, two p-i-n diodes are inserted into the upper ring
patches of the proposed AFSS element, as shown in Fig. 2,
which illustrates their placement on the patch geometry. The
p-i-n diodes used are of type BAR 63-03 W, from the Infi-
neon, Neubiberg, Germany, for microwave applications up to
3 GHz [24].
It is known that p-i-n diodes are devices that work as switches,
operating as a short circuit (ON-state) or as an open circuit
(OFF-state), depending on the applied dc bias. Particularly, the
changing from OFF to ON states, provided by the polarization
of the two diodes, causes the appearance of the proposed AFSS
closely spaced resonances. In fact, depending on the state of the
diode, there will be two ring patches (OFF-state) or two annular
rings (ON-state) at the top of the AFSS patch element; i.e., two
different geometries are generated for the AFSS patch elements,
according to the polarization state of the inserted diodes.
The simulation is performed using the Ansoft HFSS software,
which uses finite-element method. Particularly, simulation re-
sults are obtained for the AFSS transmission coefficient versus
frequency. Thereafter, prototypes are fabricated and measured
for validation purpose. Fig. 3 shows a photograph of the AFSS
prototype.
The AFSS prototype shown in Fig. 3 was fabricated on an
FR-4 substrate (εr = 4.4, h = 1.57 mm, tanδ = 0.02) with
180 integrated p-i-n diodes. The AFSS’s overall dimensions are
20 cm × 20 cm.
III. AFSS OPERATION PRINCIPLE
Fig. 4 shows the surface-current densities on the patch element
of the proposed AFSS, for the ON-state (each p-i-n diode is
PAIVA et al.: NEW COMPACT, STABLE, AND DUAL-BAND AFSS WITH CLOSELY SPACED RESONANCES
Fig. 3. AFSS prototype with integrated p-i-n diodes.
operating as a short circuit) in Fig. 4(a), and for the OFF-state
(each p-i-n diode is operating as an open circuit), in Fig. 4(b).
A higher resonance band is caused by the smaller ring patches,
while a lower resonance band is caused by the larger ring
patches.
IV. RESULTS AND DISCUSSION
The used AFSS measurement setup consisted of two
A.H. Systems Inc.-SAS-571 horn antennas (a transmitting and a
receiving), cables, and a Rohde & Schwarz-ZVB14 vector net-
work analyzer (VNA). The AFSS prototype was placed between
the transmitting horn antenna (Antenna 1), which was connected
to the output port of the VNA (Port 1), and the receiving horn
antenna (Antenna 2), which is connected to the input port of the
VNA (Port 2), at a distance (d1 = 57 cm) to ensure far-field
condition and plane-wave incidence on the AFSS, as illustrated
in Fig. 5(a) and shown in Fig. 5(b). Then, the VNA was used to
perform the measurement of the transmission coefficient (S21 )
from the transmitting antenna (Port 1) to the receiving antenna
(Port 2), for the proposed AFSS structure (see Fig. 3). In fact,
this is the same experimental procedure used for passive FSS
structures [2].
In addition, for the AFSS measurement setup, a dc power
supply was used to ensure the biasing of the diodes, as well as
dc filters to avoid interference on the RF signal propagation.
These dc filters built with open-ended stubs ensured a virtual
short circuit at microwave frequencies between the diode anode
terminal and the underneath diaphragm metallization. Measure-
ments were performed for the AFSS with all diodes on the
OFF-state or ON-state [6].
To carry out the experiment of the reconfigurable AFSS
with p-i-n diodes, an electrical circuit has been developed, as
illustrated in Fig. 6. This circuit was used for dc bias and
RF and dc signal isolation on the diodes. The acronym BCB
means benzocyclobutene, which is a polymer. The circuit was
developed as described in [7]. The single-pole double-throw
693
Fig. 4. Simulated surface current densities on the patch elements of the
proposed AFSS: (a) p-i-n diodes are in the ON-state, and (b) p-i-n diodes are
in the OFF-state.
switches, SW1 and SW2 , were used to perform the two AFSS
configurations. Furthermore, the BCB islands were used for
electrical isolation and the bias lines to attenuate the RF signals
and to provide isolation between the RF and dc signals, when
the dc voltage was turned ON to activate SW1 and SW2 switches
[25].
A parametric analysis was carried out to obtain the fre-
quency response of the AFSS for the forward and reverse bias
cases, corresponding to the p-i-n diodes ON-state and OFF-state,
respectively.
Fig. 7 shows the simulation results of the frequency behavior
of the transmission coefficient considering the ratio r between
the diameters of the upper and lower rings equal to 1.42, 1.618,
and 1.82.
As shown in Fig. 7, when the ratio r between the diameters
of the upper and lower rings is 1.420, the simulation results in
the OFF-state are: resonant frequency 2.67 GHz and bandwidth
0.33 GHz. In the ON-state, the resonant frequency is 3.53 GHz
and bandwidth 0.37 GHz. For r = 1.618, the simulation results in
the OFF-state are: resonant frequency 2.36 GHz and bandwidth
0.36 GHz. In the ON-state, the resonant frequency is 2.89 GHz
694
Fig. 5. AFSS measurement setup: (a) illustration and (b) photograph.
and bandwidth 0.47 GHz. For r = 1.82, the simulation results in
the OFF-state are: resonant frequency 2.23 GHz and bandwidth
0.43 GHz. In the ON-state, the resonant frequency is 2.79 GHz
and bandwidth 0.56 GHz.
Consistency has been observed among the simulated results
for the cases where the ratios between the upper and lower ring
slots’ diameters are equal to 1.42, 1.618, and 1.82. However, the
simulation results for r = 1.618 indicate that the resonant fre-
quencies in the OFF-state and ON-state are closer and correspond
to the desired values.
Similarly, a parametric analysis was carried out for the pro-
posed AFSS structure considering r = 1.618 and different values
of the lower ring’s diameter dl. Fig. 8 shows the simulation
results of the frequency behavior of the AFSS transmission
coefficient considering the lower ring’s diameter dl equal to 4.3
and 4.47 mm. In the analysis considering dl = 4.47, the AFSS
patch element dimensions are shown in Fig. 1. In the analysis
for dl = 4.3 mm, only the diameters of the upper and lower rings
are changed. Thus, the upper ring patch’s width is kept constant
and the diameter is 6.96 mm.
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, VOL. 62, NO. 3, JUNE 2020
Fig. 6. Diode dc bias diagram.
Fig. 7. AFSS simulated transmission coefficient results for both D1 and D2
diodes in the OFF-state and ON-state for different values of the upper and lower
rings diameters ratio, r.
According to Fig. 8, for the AFSS structure with lower ring
diameter of 4.3 mm, the simulation results in the OFF-state are:
resonant frequency is 2.56 GHz and bandwidth 0.39 GHz. In
the ON-state, the resonant frequency is 3.28 GHz and bandwidth
0.47 GHz.
Consistency has been observed between the simulated results.
However, the simulation results for the design with dl = 4.47
indicate that the resonant frequencies in the OFF-state and ON-
state are closer and correspond to the desired values.
Fig. 9 shows the simulation and measured results for the
reconfigurable AFSS transmission coefficient versus frequency
for the proposed FSS structure (see Fig. 1) by using the Fibonacci
number.
In addition, the results for the AFSS frequency response were
obtained using an extension of the previous generalization of the
WCIP method (GWCIP), described in [2], which is related to
the ability of analyzing FSS structures with active components.
PAIVA et al.: NEW COMPACT, STABLE, AND DUAL-BAND AFSS WITH CLOSELY SPACED RESONANCES
Fig. 8. AFSS simulated transmission coefficient results for both D1 and D2
diodes in the OFF-state and ON-state for different values of the lower ring slots
diameter, dl.
Fig. 9. Simulated and measured transmission coefficient results for the cases
where p-i-n diodes D1 and D2, shown in Fig. 6, are simultaneously in ON-state
or OFF-state.
According to Fig. 9, for the experimental results obtained
for the case where diodes D1 and D2 are in the OFF-state, the
resonant frequency is 2.37 GHz, with a bandwidth of 0.5 GHz,
and a transmission coefficient of −28.79 dB. When diodes D1
and D2 are in the ON-state, the resonant frequency is 2.88 GHz,
with a bandwidth of 0.75 GHz, and a transmission coefficient of
−32.37 dB.
Thereafter, the stability of the AFSS is investigated with
respect to the (oblique) incidence of electromagnetic waves for
angles up to 40°, with both diodes D1 and D2 in the OFF and ON
states.
695
Fig. 10. AFSS simulated and measured transmission coefficient results for
both D1 and D2 diodes in the OFF-state and for incident angles of (a) 20° and
(b) 40°.
In Fig. 10(a) and (b), AFSS simulated and measured trans-
mission coefficient results are presented for incident angles of
20° and 40°, respectively, and for both D1 and D2 diodes in the
OFF-state.
In Fig. 11(a) and (b), AFSS simulated and measured trans-
mission coefficient results are presented for incident angles of
20° and 40°, respectively, and for both D1 and D2 diodes in the
ON-state.
According to the measured results shown in Fig. 10(a), for
an incidence angle of 20°, the AFSS resonant frequency is
2.36 GHz, with a bandwidth of 0.4 GHz, and a transmission
coefficient of −26.63 dB. As shown in Fig. 10(b), for an inci-
dence angle of 40°, the AFSS resonant frequency is 2.32 GHz,
with a bandwidth of 0.5 GHz, and a transmission coefficient of
−26.54 dB.
696
Fig. 11. AFSS simulated (HFSS Ansoft and generalization of the WCIP) and
measured transmission coefficient results for both D1 and D2 diodes in the
ON-state and for incident angles of (a) 20° and (b) 40°.
As shown in Fig. 11(a), for an incidence angle of 20°, the
AFSS resonant frequency is 2.89 GHz, with a bandwidth of
0.49 GHz, and a transmission coefficient of −27.27 dB. In
Fig. 11(b), for an incidence angle of 40°, the AFSS resonant
frequency is 2.86 GHz, with a bandwidth of 0.65 GHz, and a
transmission coefficient of −29.11 dB.
The simulated and measured results for the AFSS resonant
frequency, bandwidth, and transmission coefficient, at different
oblique incidence angles, and with all diodes simultaneously
operating at the OFF-state or ON-state, as shown in Figs. 9–11,
are summarized in Table I (OFF-state) and Table II (ON-state).
Considering the simulated and measured results shown in
Figs. 9–11 and summarized in Tables I and II, the proposed AFSS
is reconfigurable, with closely spaced resonant frequencies of
about 2.4 and 2.9 GHz, provided by 180 p-i-n diode switches,
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, VOL. 62, NO. 3, JUNE 2020
TABLE I
RESULTS FOR THE AFSS WITH p-i-n DIODES D1 AND D2 IN OFF-STATE
TABLE II
RESULTS FOR THE AFSS WITH p-i-n DIODES D1 AND D2 IN ON-STATE
with an FR of 1.2, and is stable, exhibiting a good angular
stability.
V. CONCLUSION
A compact, stable, and dual-band AFSS with close band
spacing is proposed. The geometry of the AFSS array ele-
ments consists of a slotted cross dipole combined with four
ring patches with the same format, which were divided in two
identical pairs of different size, where the size of the upper ring
patches is about 1.618 times the size of the lower ones. The
p-i-n diodes were integrated to the upper ring patches of the
structure to operate at ON and OFF states, changing the AFSS
resonance frequency and providing operation with close band
space. Simulated and measured results for the proposed AFSS
resonant frequency, bandwidth, and transmission coefficient are
in good agreement for different wave incident angles. For normal
wave incidence, the AFSS results for the resonant frequency are
2.36 and 2.89 GHz, when all diodes are on the OFF and ON states,
respectively. Therefore, the proposed AFSS structure is suitable
for wireless system applications.
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697
Samuel B. Paiva (S’19) received the Bachelor of
Science and Technology (Hons.) and Bachelor of
Electrical Engineering degrees from the Federal Rural
University of the Semi-Arid Region, Mossoro, Brazil,
in 2013 and 2016, respectively. He is currently work-
ing toward the M.S. degree in electrical engineering at
the Federal University of Rio Grande do Norte, Natal,
Brazil.
His research interests are on frequency selective
surfaces, antennas, electromagnetism, wireless com-
munications, neural networks and electronics.
Valdemir P. Silva Neto (M’19) received the B.Sc.
(Hons.), M.S., and doctoral degrees in electrical en-
gineering from the Federal University of Rio Grande
do Norte, Natal, Brazil, in 2012, 2013, and 2016,
respectively.
From 2010 to 2011, he was an Exchange Student
with ENSEEHIT in the program BRAFITEC funded
by CAPES/Brazil. From 2011 to 2012, he worked in
satellite communication with the National Institute
for Space Research. From 2014 to 2018, he was with
the Federal Rural University of Semi-Arid, where he
was an Associate Professor of electrical and electronics engineering. From 2016
to 2017, he was a Postdoctoral Visiting Scientist with the Department of Electri-
cal and Electronics Engineering, Pontifical Catholic University of Rio de Janeiro,
Rio de Janeiro, Brazil. Since 2018, he has been with the Federal University
of Rio Grande do Norte, where he is an Associate Professor. He is currently
teaching and conducting research on frequency selective surfaces, antennas,
wireless communications, electromagnetism, and computational modeling.
Adaildo G. D’Assunção (LM’17) received the
B.S.E.E. (Hons.) degree from the Federal University
of Rio Grande do Norte, Natal, Brazil, in 1974, and the
M.S. and doctoral degrees from the State University
of Campinas, Campinas, Brazil, in 1977 and 1981,
respectively, all in electrical engineering.
From 1975 to 1976, he worked in radar and teleme-
try systems with the Launching Center of Barreira do
Inferno, Natal, Brazil. Since 1976, he has been with
the Federal University of Rio Grande do Norte, where
he is a Full Professor of electrical and electronics
engineering. From 1985 to 1987, he was a Postdoctoral Visiting Scientist with
the North Dakota State University. He has coauthored 81 journal papers, three
book chapters, and 186 conference papers. He is currently teaching and conduct-
ing research on frequency selective surfaces, antennas, propagation, wireless
communications, millimeter waves, and terahertz. His particular interests are in
reconfigurable, flexible and wearable integrated circuits, EBG devices, ceramic
substrates, and metamaterials.
Dr. D’Assunção is a member of the Brazilian Microwave and Optoelectronics
Society (SBMO). He chaired the 1997 and 2011 SBMO/IEEE MTT-S Interna-
tional Microwave and Optoelectronics Conference. He is a former President
of SBMO (2000–2002). He was the recipient of the UFRN/FUNPEC Research
Prize (2004) and is the first recipient of the SBMO Professor Attílio José Giarola
Medal of Merit (2012). Currently, he is a Coordinator of the Brazilian National
Institute on Wireless Communications.