Download as pdf or txt
Download as pdf or txt
You are on page 1of 9

Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

General Description Main Product Characteristics


High voltage dual Schottky rectifier suited for switch IF(AV) 2*10A
mode power supplies and other power converters.
VRRM 150V
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits TJ 150°C
where low switching losses and low noise are VF(max) 0.75V
required.

The MBR20150C is available in standard, TO-220-3,


TO-220-3 (2) and TO-220F-3 packages.

Mechanical Characteristics
• Case: Epoxy, Molded
Features • Epoxy Meets UL 94 V-0@ 0.125 in
• Weight (Approximately):
• High Surge Capacity 1.9 Grams (TO-220-3, TO-220-3(2) and
• 150°C Operating Junction Temperature TO-220F-3)
• 20 A Total (10 A Per Diode Leg) • Finish: All External Surfaces Corrosion
• Guard-Ring foe Stress Protection Resistant and Terminal
• Pb- Free Packages are available • Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds

Applications

• Power Supply − Output Rectification


• Power Management
• Instrumentation

TO-220F-3 TO-220-3 TO-220-3 (2)

Figure 1. Package Type of MBR20150C

Jun. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

1
Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

Pin Configuration

T Package
(TO-220-3) (TO-220-3 (2))

3 A2
2 K
1 A1

TF Package
(TO-220F-3)

Figure 2. Pin Configuration of MBR20150C (Top View)

Figure 3. Internal Structure of MBR20150C

Jun. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

2
Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

Ordering Information

MBR20150C -

E1: Lead Free


Circuit Type G1: Green

Package Blank: Tube


T: TO-220-3/TO-220-3 (2)
TF: TO-220F-3

Part Number Marking ID Packing


Package
Lead Free Green Lead Free Green Type
TO-220-3/ MBR20150CT- MBR20150CT- MBR20150CT- MBR20150CT-
Tube
TO-220-3(2) E1 G1 E1 G1
MBR20150CTF MBR20150CTF MBR20150CTF MBR20150CTF
TO-220F-3 Tube
-E1 -G1 -E1 -G1

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.

Absolute Maximum Ratings ( Per Diode Leg) (Note 1)


Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 150 V
DC Blocking Voltage VR
Average Rectified Forward Current
IF(AV) 10 A
(Rated VR) TC = 134°C
Peak Repetitive Forward Current
IFRM 20 A
(Rated VR, Square Wave, 20 kHz) TC = 133°C
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, IFSM TBD A
60Hz)
Operating Junction Temperature Range(Note 2) TJ 150 °C
Storage Temperature Range TSTG -55 to 150 °C
Voltage Rate of Change (Rated VR) dv/dt TBD V/µs
ESD Ratings: Machine Model = C > 400
V
Human Body Model =3B > 8000

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.

Jun. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

3
Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

Recommended Operating Conditions

Parameter Symbol Condition Value Unit


TO-220-3/
2.0
θJC Junction to Case TO-220-3(2)
TO-220F-3 3.0
Maximum Thermal Resistance °C/W
TO-220-3/
Junction to 60
θJA TO-220-3(2)
Ambient
TO-220F-3 60

Electrical Characteristics

Parameter Symbol Conditions Value Units


Maximum Instantaneous Forward IF=10A, TC=25°C 0.9
Voltage Drop (Note 3) VF V
IF=10A, TC=125°C 0.75

Rated DC Voltage,
Maximum Instantaneous Reverse 20
TC=125°C
Current (Note 3) IR mA
Rated DC Voltage,
0.05
TC=25°C

Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.

Jun. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

4
Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

Typical Performance Characteristics

100 10000
TJ=150°C
1000
Instantaneous Forward Current (A)

10

Reverse Current (µA)


100 TJ=125°C
TJ=150°C
10
1 TJ=125°C

0.1
0.1
TJ=25°C TJ=25°C
0.01
0.01 0 20 40 60 80 100 120 140 160
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Reverse Voltage (V)
Instantaneous Forward Voltage (V)

Figure 4. Typical Forward Voltage Per Diode Figure 5. Typical Reverse Current Per Diode

20
Average Forward Current (A)

15

10

0
90 100 110 120 130 140 150 160
Case Temperature (°C)

Figure6. Average Forward Current vs. .


Case Temperature (Square, Per Diode)

Jun. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

5
Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

Mechanical Dimensions

TO-220-3 Unit: mm(inch)

9.660(0.380)
10.660(0.420) 2.580(0.102)
φ3.560(0.140) 3.380(0.133)
0.550(0.022)
4.060(0.160) 1.350(0.053)

0.200(0.008)

φ1.500(0.059)
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
3° 7°

1.160(0.046) 0.381(0.015)
1.760(0.069)

60°

0.813(0.032)
8.763(0.345)

60°

0.381(0.015)
0.356(0.014)
2.540(0.100) 2.540(0.100) 0.406(0.016)

Jun. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

6
Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

Mechanical Dimensions

TO-220-3(2) Unit: mm(inch)

9.800(0.386)
10.200(0.402)

1.700(0.067) ∅ 3.560(0.140)
0.600(0.024) 1.300(0.051)
3.640(0.143)

1.300(0.051)

4.500(0.177)

2.400(0.094)

3° 3°

1.270(0.050)

0.700(0.028)
0.900(0.035)

0.400(0.016)
2.540(0.100) 2.540(0.100) 0.600(0.024)

Jun. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

7
Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

Mechanical Dimensions (Continued)

TO-220F-3 Unit: mm(inch)

9.700(0.382)
10.300(0.406)
3.000(0.119)
6.900(0.272) 3.400(0.134)
3.000(0.119) 2.350(0.093)
3.550(0.140) 7.100(0.280) 2.900(0.114)

3.370(0.133)
3.900(0.154)

14.700(0.579)
16.000(0.630)

4.300(0.169)
4.900(0.075)
4.500(0.177)
2.790(0.110)

1.000(0.039)
1.400(0.055)

1.100(0.043)
1.500(0.059)

12.500(0.492)
13.500(0.531)

0.550(0.022)
0.900(0.035)

0.450(0.018)
0.600(0.024)
2.540(0.100) 2.540(0.100)

Jun. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited

8
BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

IMPORTANT NOTICE
IMPORTANT NOTICE

BCD Semiconductor
BCD Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products oror specifi-
specifi-
cations herein.
cations herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey anyany license
license under
under its
its patent
patent rights
rights or
or
other rights
other rights nor
nor the
the rights
rights of
of others.
others.

MAIN SITE
MAIN SITE
- Headquarters
BCD Semiconductor Manufacturing Limited - Wafer
BCD FabSemiconductor Manufacturing Limited
BCD Semiconductor
- Wafer Fab Manufacturing Limited Shanghai SIM-BCD
- IC Design GroupSemiconductor Manufacturing Co., Ltd.
No. 1600, Zi
Shanghai Xing Road,
SIM-BCD Shanghai ZiZhu
Semiconductor Science-basedLimited
Manufacturing Industrial Park, 200241, China 800 Yi Shan Road,
Advanced Shanghai
Analog 200233,
Circuits China Corporation
(Shanghai)
Tel:
800,+86-21-24162266, Fax: +86-21-24162277
Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491,YiFax:
8F, Zone B, 900, Shan+86-21-5450 0008200233, China
Road, Shanghai
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL Taiwan Office USA Office
Shanghai
Shenzhen SIM-BCD
Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan
Semiconductor
Office (Taiwan) Company Limited BCD Office
USA Semiconductor Corp.
Room E, 5F,
Shanghai Noble Center,
SIM-BCD No.1006,Manufacturing
Semiconductor 3rd Fuzhong Road, Futian
Co., Ltd. District,Office
Shenzhen Shenzhen, 4F, 298-1,
BCDRui Guang Road,(Taiwan)
Semiconductor Nei-Hu District,
Company Taipei,
Limited 30920Semiconductor
BCD Huntwood Ave.Corporation
Hayward,
518026,
Advanced China
Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, CA 94544,
30920 USA Ave. Hayward,
Huntwood
Tel:
Room +86-755-8826
E, 5F, Noble 7951 Tel: +886-2-2656
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan 2808 Tel :94544,
CA +1-510-324-2988
U.S.A
Fax: +86-755-88267951
Tel: +86-755-8826 7865 Fax: +886-2-2656 28062808
Tel: +886-2-2656 Fax:: +1-510-324-2988
Tel +1-510-324-2788
Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 Fax: +1-510-324-2788

You might also like