Preliminary Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C

General Description Main Product Characteristics

High voltage dual Schottky rectifier suited for switch IF(AV) 2*10A
mode power supplies and other power converters.
VRRM 150V
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits TJ 150°C
where low switching losses and low noise are VF(max) 0.75V
required.

The MBR20150C is available in standard, TO-220-3,

TO-220-3 (2) and TO-220F-3 packages.

Mechanical Characteristics
• Case: Epoxy, Molded
Features • Epoxy Meets UL 94 V-0@ 0.125 in
• Weight (Approximately):
• High Surge Capacity 1.9 Grams (TO-220-3, TO-220-3(2) and
• 150°C Operating Junction Temperature TO-220F-3)
• 20 A Total (10 A Per Diode Leg) • Finish: All External Surfaces Corrosion
• Guard-Ring foe Stress Protection Resistant and Terminal
• Pb- Free Packages are available • Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds

Applications

• Power Supply − Output Rectification

• Power Management
• Instrumentation

TO-220F-3 TO-220-3 TO-220-3 (2)

Figure 1. Package Type of MBR20150C

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Pin Configuration

T Package
(TO-220-3) (TO-220-3 (2))

3 A2
2 K
1 A1

TF Package
(TO-220F-3)

Figure 2. Pin Configuration of MBR20150C (Top View)

Figure 3. Internal Structure of MBR20150C

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Ordering Information

MBR20150C -

E1: Lead Free

Circuit Type G1: Green

Package Blank: Tube

T: TO-220-3/TO-220-3 (2)
TF: TO-220F-3

Part Number Marking ID Packing

Package
Lead Free Green Lead Free Green Type
TO-220-3/ MBR20150CT- MBR20150CT- MBR20150CT- MBR20150CT-
Tube
TO-220-3(2) E1 G1 E1 G1
MBR20150CTF MBR20150CTF MBR20150CTF MBR20150CTF
TO-220F-3 Tube
-E1 -G1 -E1 -G1

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.

Absolute Maximum Ratings ( Per Diode Leg) (Note 1)

Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 150 V
DC Blocking Voltage VR
Average Rectified Forward Current
IF(AV) 10 A
(Rated VR) TC = 134°C
Peak Repetitive Forward Current
IFRM 20 A
(Rated VR, Square Wave, 20 kHz) TC = 133°C
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, IFSM TBD A
60Hz)
Operating Junction Temperature Range（Note 2） TJ 150 °C
Storage Temperature Range TSTG -55 to 150 °C
Voltage Rate of Change (Rated VR) dv/dt TBD V/µs
ESD Ratings: Machine Model = C > 400
V
Human Body Model =3B > 8000

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.

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Recommended Operating Conditions

Parameter Symbol Condition Value Unit

TO-220-3/
2.0
θJC Junction to Case TO-220-3(2)
TO-220F-3 3.0
Maximum Thermal Resistance °C/W
TO-220-3/
Junction to 60
θJA TO-220-3(2)
Ambient
TO-220F-3 60

Electrical Characteristics

Parameter Symbol Conditions Value Units

Maximum Instantaneous Forward IF=10A, TC=25°C 0.9
Voltage Drop (Note 3) VF V
IF=10A, TC=125°C 0.75

Rated DC Voltage,
Maximum Instantaneous Reverse 20
TC=125°C
Current (Note 3) IR mA
Rated DC Voltage,
0.05
TC=25°C

Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.

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Typical Performance Characteristics

100 10000
TJ=150°C
1000
Instantaneous Forward Current (A)

10

Reverse Current (µA)

100 TJ=125°C
TJ=150°C
10
1 TJ=125°C

0.1
0.1
TJ=25°C TJ=25°C
0.01
0.01 0 20 40 60 80 100 120 140 160
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Reverse Voltage (V)
Instantaneous Forward Voltage (V)

Figure 4. Typical Forward Voltage Per Diode Figure 5. Typical Reverse Current Per Diode

20
Average Forward Current (A)

15

10

0
90 100 110 120 130 140 150 160
Case Temperature (°C)

Figure6. Average Forward Current vs. .

Case Temperature (Square, Per Diode)

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Mechanical Dimensions

TO-220-3 Unit: mm(inch)

9.660(0.380)
10.660(0.420) 2.580(0.102)
φ3.560(0.140) 3.380(0.133)
0.550(0.022)
4.060(0.160) 1.350(0.053)

0.200(0.008)

7°

φ1.500(0.059)
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
3° 7°

1.160(0.046) 0.381(0.015)
1.760(0.069)

60°

0.813(0.032)
8.763(0.345)

60°

0.381(0.015)
0.356(0.014)
2.540(0.100) 2.540(0.100) 0.406(0.016)

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Mechanical Dimensions

TO-220-3(2) Unit: mm(inch)

9.800(0.386)
10.200(0.402)

1.700(0.067) ∅ 3.560(0.140)
0.600(0.024) 1.300(0.051)
3.640(0.143)

1.300(0.051)

3°

4.500(0.177)

2.400(0.094)

3° 3°

1.270(0.050)

0.700(0.028)
0.900(0.035)

0.400(0.016)
2.540(0.100) 2.540(0.100) 0.600(0.024)

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Mechanical Dimensions (Continued)

TO-220F-3 Unit: mm(inch)

9.700(0.382)
10.300(0.406)
3.000(0.119)
6.900(0.272) 3.400(0.134)
3.000(0.119) 2.350(0.093)
3.550(0.140) 7.100(0.280) 2.900(0.114)

3.370(0.133)
3.900(0.154)

14.700(0.579)
16.000(0.630)

4.300(0.169)
4.900(0.075)
4.500(0.177)
2.790(0.110)

1.000(0.039)
1.400(0.055)

1.100(0.043)
1.500(0.059)

12.500(0.492)
13.500(0.531)

0.550(0.022)
0.900(0.035)

0.450(0.018)
0.600(0.024)
2.540(0.100) 2.540(0.100)

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