Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

General Description Features

The AH211 is an integrated Hall sensor with output · On-Chip Hall Sensor
driver and frequency generator designed for electronic · 3.5V to 16V Supply Voltage
commutation of brush-less DC motor applications. The · 400mA (avg) Output Sink Current
device includes an on-chip Hall sensor for magnetic
· -20oC to 85oC Operating Temperature
sensing, an amplifier that amplifies the Hall voltage, a
Schmitt trigger to provide switching hysteresis for · Built-in FG Output
noise rejection, a temperature compensation circuit to · Low Profile TO-94 (SIP-4L) Package
compensate the temperature drift of Hall sensitivity, · ESD Rating: 600V (Machine Model)
two complementary open-collector drivers for sinking
large load current. It also includes an internal band-gap Applications
regulator which is used to provide bias voltage for
internal circuits.
· Dual-Coil Brushless DC Motor
Place the device in a variable magnetic field, while the · Dual-Coil Brushless DC Fan
magnetic flux density is larger than threshold BOP, DO · Revolution Counting
will be turned on (low) and DOB (and FG) will be · Speed Measurement
turned off (high). This output state is held till the mag-
netic flux density reversal falls below BRP causing DO
to be turned off (high) and DOB (and FG) turned on
(low).

AH211 is available in TO-94 (SIP-4L) package.

TO-94

Figure 1. Package Type of AH211

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

1
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Pin Configuration

Z4 Package
(TO-94)

4 GND
3 DOB
2 DO
1 FG

Figure 2. Pin Configuration of AH211 (Front View)

Pin Description

Pin Number Pin Name Function

1 FG Frequency Generation
2 DO Output 1
3 DOB Output 2
4 GND Ground

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

2
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Functional Block Diagram

2
Temperature DO
Regulator Compensation

Hall Schmitt Output

Amplifier
Sensor Trigger Driver
3
DOB

4
GND
1

FG

Figure 3. Functional Block Diagram of AH211

Ordering Information
AH211 -

E1: Lead Free

Circuit Type
G1: Green

Package Magnetic Characteristics

Z4: TO-94 (SIP-4L) A: 5 to 60 Gauss
B: 90 Gauss

Temperature Part Number Marking ID Packing

Package
Range Lead Free Green Lead Free Green Type
AH211Z4-AE1 AH211Z4-AG1 AH211 AH211Z4-G1 Bulk
TO-94 -20 to 85 oC
AH211Z4-BE1 AH211Z4-BG1 AH211 AH211Z4-G1 Bulk

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green package.

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

3
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Absolute Maximum Ratings (Note 1)
(TA=25oC)

Parameter Symbol Value Unit

Supply Voltage VCC 20 V

Magnetic Flux Density B Unlimited Gauss

Continuous 400 mA
Output Current
Hold IO 600 mA

Peak (Start up) 800 mA

FG Voltage VFG 30 V

FG Current IFG 20 mA

Power Dissipation PD 550 mW

Die to Atmosphere θJA 227 oC/W

Thermal Resistance
Die to Package Case θJC 49 oC/W

Storage Temperature TSTG -50 to 150 oC

ESD (Machine Model) 600 V

ESD (Human Body Model) 6000 V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.

Recommended Operating Conditions

(TA=25oC)

Parameter Symbol Min Max Unit

Supply Voltage VCC 3.5 16 V
Ambient Temperature TA -20 85 o
C

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

4
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Electrical Characteristics
(TA=25oC, VCC=14V, unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
B>150Gauss, VCC=3.5V,
VDOB=VCC, IDO=100mA
(or B<-150Gauss, VCC=3.5V, 1.1 V
VDO=VCC, IDOB=100mA)
Output Saturation Voltage VSAT
B>150Gauss,
VDOB=VCC, IDO=400mA
(or B<-150Gauss, VDO=VCC, 1.05 1.3 V
IDOB=400mA)

B<-150Gauss, VDO=VCC,
FG Saturation Voltage VSATF 0.35 0.6 V
IFG=20mA

B>150Gauss, VDOB=VCC,
FG Leakage Current IOLF 0.1 10 µA
VFG=16V

B>150Gauss, VDOB=VCC,
Supply Current ICC 4 8 mA
(or B<-150Gauss, VDO=VCC )

Output Rise Time tr RL=1kΩ, CL=10pF 3.0 10 µs

Output Fall Time tf RL=1kΩ, CL=10pF 0.3 1.0 µs
Switch Time Differential ∆t RL=1kΩ, CL=10pF 3.0 10 µs
Output Zener Breakdown Voltage VZ 31 V

Magnetic Characteristics
(TA=25oC)
Parameter Symbol Grade Min Typ Max Unit
A 5 30 60 Gauss
Operating Point BOP
B 90 Gauss
A -60 -30 -5 Gauss
Releasing Point BRP
B -90 Gauss
Hysteresis BHYS 60 Gauss

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

5
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Magnetic Characteristics (Continued)

+14V

S AH211
FG DO DOB GND

Marking Side
1 2 3 4
R1 FG (VFG)

1kΩ
R2 DO (VOUT1)
1kΩ
R3 DOB (VOUT2)
N 1kΩ C1 C2 C3
10pF 10pF 10pF

Figure 4. Basic Test Circuit

DO (V) DOB (V)

16
16
VCC VCC
14 14

12 12

10 10

8 8

6 6

4 4

2 2
VSAT VSAT

-40 -20 0 20 40 -40 -20 0 20 40

Magnetic Flux Density B (Gauss) Magnetic Flux Density B (Gauss)

Figure 5. VDO vs. Magnetic Flux Density Figure 6. VDOB vs. Magnetic Flux Density

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

6
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Typical Performance Characteristics

80
4.4
o
TA=25 C 60
4.2

4.0
40

BOP/BRP/BHYS (GS)
3.8
IPIN2
3.6 20
ICC (mA)

IPIN3
3.4 B OP
0
B RP
3.2
B HYS
3.0 -20

2.8
-40
2.6

2.4 -60
4 6 8 10 12 14 16 18 4.0 6.0 8.0 10.0 12.0 14.0 16.0

VCC (V) V CC (V)

Figure 7. ICC vs. VCC Figure 8. BOP/BRP/BHYS vs. VCC

80 800

60

600
BOP/BRP/BHYS (Gauss)

40
PD (mW)

20
400

BOP
-20
BRP 200
BHYS
-40

-60 0
-20 -10 0 10 20 30 40 50 60 70 80 -25 0 25 50 75 100 125 150
o
o
TA ( C) TA ( C)

Figure 9. BOP/BRP/BHYS vs. Ambient Temperature Figure 10. PD vs. Ambient Temperature

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

7
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Typical Performance Characteristics (Continued)

1100
5.5
VCC=14V VCC=14V
5.0 IOUT=400mA
1050
4.5
VPIN2

VSAT (mV)
4.0
ICC (mA)

1000 VPIN3
3.5

3.0
950
2.5 IPIN2
IPIN3
2.0
900
-40 -20 0 20 40 60 80 -40 -20 0 20 40 60 80
o o
TA ( C) TA ( C)

Figure 11. Supply Current vs. Ambient Temperature Figure 12. VSAT vs. Ambient Temperature

320

250
VPIN2=14V
300 IOUT=20mA
200
VSATF (mV)

VSATF (mV)

280
150

260
100

50 240

0 220
0 5 10 15 20 -40 -20 0 20 40 60 80
o
IOUT (mA) TA ( C)

Figure 13. FG Saturation Voltage vs. Figure 14. FG Saturation Voltage vs.
Output Current Ambient Temperature

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

8
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Application Information
Figure 15 is the typical application circuit for AH211.
Usually, there are three wires for fan connection: the
red is input of power supply; the yellow is the output of
FG; the black is the ground. R1 is an external pull-up
resister for the use of measuring FG signal from fan.
The value of R1 could be decided by the transistor
saturation voltage (VON), sink current (IFG), and pull-
up voltage (VDD). The calculation formula is:
R1=(VDD-VON) / IFG
According AH211's specification, if VDD=5V, R1 must
be larger than 220Ω.
D1 is the reverse protection diode. If the red and black
wires reversely connected, the current will flow from
the ground via IC and coils L1 and L2 to power supply.
Under such circumstances, the IC and coils are easy to
be burned out. Therefore, the reverse protection diode
D1is necessary. However, D1 will also cause an extra
voltage drop on the supply voltage.

For example: C1 is a capacitor to reduce the ripple noise caused by

VDD=5V for TTL level.
If saturation voltage is 0.6V (IC specification)
IFG=20mA ( ≤20mA) , then R1=220Ω ;
the transient of the output stages. The amplitude of the
ripple noise depends on the coil impedance and its
characteristics.

If saturation voltage is 0.1V, IFG=1mA (=<20mA) , the

value of R1=4.9kΩ

VCC (Red Wire) D1

AH211
C1 COIL1 COIL2
FG DO DOB GND

1 2 3 4
VDD R1 1kΩ

FG (Yellow Wire)

GND (Black Wire)

Figure 15. AH211 Typical Application Circuit

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

9
 Data Sheet

TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT AH211

Mechanical Dimensions

TO-94 Unit: mm(inch)

45°TYP
0.500(0.020) 3.780(0.149)
0.700(0.028) 4.080(0.161)

1.520(0.059)
1.720(0.067)

4.980(0.196) 0.360(0.014)
0.700(0.028) 5.280(0.208) 0.510(0.020)
0.900(0.035)
1.850(0.073)

1.250(0.050)
3.450(0.136)
0.380(0.015) 3.750(0.148)
Package Sensor Location 0.550(0.022)

0.360(0.014)
0.500(0.020)

14.000(0.550)
15.300(0.602)

1.270(0.050) TYP

3.710(0.146)
3.910(0.154)

Feb. 2010 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

10
 BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

IMPORTANT NOTICE
IMPORTANT NOTICE

BCD Semiconductor
BCD Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products oror specifi-
specifi-
cations herein.
cations herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey anyany license
license under
under its
its patent
patent rights
rights or
or
other rights
other rights nor
nor the
the rights
rights of
of others.
others.

MAIN SITE
MAIN SITE
- Headquarters
BCD Semiconductor Manufacturing Limited - Wafer
BCD FabSemiconductor Manufacturing Limited
BCD Semiconductor
- Wafer Fab Manufacturing Limited Shanghai SIM-BCD
- IC Design GroupSemiconductor Manufacturing Co., Ltd.
No. 1600, Zi
Shanghai Xing Road,
SIM-BCD Shanghai ZiZhu
Semiconductor Science-basedLimited
Manufacturing Industrial Park, 200241, China 800 Yi Shan Road,
Advanced Shanghai
Analog 200233,
Circuits China Corporation
(Shanghai)
Tel:
800,+86-21-24162266, Fax: +86-21-24162277
Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491,YiFax:
8F, Zone B, 900, Shan+86-21-5450 0008200233, China
Road, Shanghai
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL Taiwan Office USA Office
Shanghai
Shenzhen SIM-BCD
Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan
Semiconductor
Office (Taiwan) Company Limited BCD Office
USA Semiconductor Corp.
Unit A Room
Shanghai 1203, Skyworth
SIM-BCD Bldg., Gaoxin
Semiconductor Ave.1.S., Nanshan
Manufacturing Co., Ltd.District,
Shenzhen Shenzhen,
Office 4F, 298-1,
BCDRui Guang Road,(Taiwan)
Semiconductor Nei-Hu District,
Company Taipei,
Limited 30920Semiconductor
BCD Huntwood Ave.Corporation
Hayward,
China
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, CA 94544,
30920 USA Ave. Hayward,
Huntwood
Tel:
Room +86-755-8826
E, 5F, Noble 7951 Tel: +886-2-2656
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan 2808 Tel :94544,
CA +1-510-324-2988
U.S.A
Fax: +86-755-88267951
Tel: +86-755-8826 7865 Fax: +886-2-2656 28062808
Tel: +886-2-2656 Fax:: +1-510-324-2988
Tel +1-510-324-2788
Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 Fax: +1-510-324-2788