AOTF404

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOTF404/L uses advanced trench technology and VDS (V) = 105V
design to provide excellent RDS(ON) with low gate charge. ID = 26 A (VGS =10V)
This device is suitable for use in high voltage RDS(ON) < 28 mΩ (VGS =10V)
synchronous rectification , load switching and general RDS(ON) < 31 mΩ (VGS = 6V)
purpose applications.
100% UIS Tested!
-RoHS Compliant
-AOTF404L Halogen Free

TO-220FL
D

G
G S
D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 105 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C 26
Current TC=100°C ID 18 A
Pulsed Drain Current C IDM 90
Continuous Drain TA=25°C 5.8
IDSM A
Current TA=70°C 4.5
C
Avalanche Current IAR 37 A
Repetitive avalanche energy L=0.1mH C EAR 68 mJ
TC=25°C 43
PD W
Power Dissipation B TC=100°C 21
TA=25°C 2.2
A PDSM W
Power Dissipation TA=70°C 1.38
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 10 12 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 48.5 58 °C/W
Maximum Junction-to-Case B Steady-State RθJC 2.9 3.5 °C/W

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AOTF404

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 105 V
VDS=105V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±25V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.5 3.2 4 V
ID(ON) On state drain current VGS=10V, VDS=5V 90 A
VGS=10V, ID=20A 21 28
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 39 47
VGS=6V, ID=20A 23.5 31 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 73 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 55 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1630 2038 2445 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 142 204 265 pF
Crss Reverse Transfer Capacitance 51 85 119 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.65 1.3 1.95 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 30.8 38.5 46 nC
Qgs Gate Source Charge VGS=10V, VDS=50V, ID=20A 6.4 8 9.6 nC
Qgd Gate Drain Charge 8 10 14 nC
tD(on) Turn-On DelayTime 12.7 ns
tr Turn-On Rise Time VGS=10V, VDS=50V, RL=2.7Ω, 8.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 31.5 ns
tf Turn-Off Fall Time 11.2 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 34 49 64 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 337 481 625 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.

Rev0: Otc. 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOTF404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100
25
10V
80 20 VDS=5V

6V
60 15

ID(A)
ID (A)

125°C
40 10
5V
5
20
VGS=4.5V 25°C
0
0
2 2.5 3 3.5 4 4.5 5
0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

30 2.6
2.4
Normalized On-Resistance

VGS=6V 2.2 VGS=10V, 20A

25
2
RDS(ON) (mΩ)

1.8
20 VGS=10V 1.6
VGS=6V,20A
1.4
15 1.2
1

10 0.8
0 10 20 30 40 0 25 50 75 100 125 150 175 200
Temperature (°C)
ID (A)
Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Temperature
Gate Voltage

60 1.0E+02
ID=20A
1.0E+01
50
125°C
125°C 1.0E+00
RDS(ON) (mΩ)

40
IS (A)

1.0E-01

25°C
30 1.0E-02

20 1.0E-03
25°C
1.0E-04
10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
4 8 12 16 20 VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

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AOTF404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3
10
VDS=50V
8 ID=20A
Ciss

Capacitance (nF)
2
VGS (Volts)

4
1

2 Coss
Crss

0 0
0 10 20 30 40 0 20 40 60 80 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 300
10µs
RDS(ON)
limited
100µs TJ(Max)=175°C
TC=25°C
10 200
Power (W)
ID (Amps)

1ms

10ms
100
1 DC

TJ(Max)=175°C,
TA=25°C
0
0.1 0.0001 0.001 0.01 0.1 1 10
0.1 1 10 100 1000
Pulse Width (s)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Figure 10: Single Pulse Power Rating Junction-to-
Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

1 RθJC=3.5°C/W
Thermal Resistance

0.1

0.01
PD

0.001 Ton
T
Single Pulse
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOTF404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

45 50
ID(A), Peak Avalanche Current

40

Power Dissipation (W)

35
TA=25°C 30

TA=150°C 20
25 TA=100°C

10
TA=125°C

15 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

30 100

25 80
TA=25°C
Current rating ID(A)

Power (W)

20 60

15
40

10
20

5
0
0 0.01 0.1 1 10 100 1000
0 25 50 75 100 125 150 175 Pulse Width (s)
TCASE (°C) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)

10 D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

1 RθJA=58°C/W
Thermal Resistance

0.1

0.01
PD
0.001
Single Pulse Ton
T
0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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AOTF404

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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