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Seat No: ______________ PDFelement

Enrollment No: ____________________
PARUL UNIVERSITY
FACULTY OF ENGINEERING & TECHNOLOGY
B.Tech., Winter 2018 - 19 Examination
Semester: 1 Date: 11/12/2018
Subject Code: 203192102 Time: 2:00 pm to 4:30 pm
Subject Name: Engineering Physics Total Marks: 60
Instructions:
1. All questions are compulsory.
2. Figures to the right indicate full marks.
3. Make suitable assumptions wherever necessary.
4. Start new question on new page.

Q.1 (a) Attempt all of the following questions. (15)

1. For a free electron, relation between energy and wave vector is
2k 2 2 2 m 2 2
(a) E (b) E (c) E (d) E
2m 2mk 2 k2 k2
2. In case of intrinsic semiconductor, which condition is satisfied?
(a) ni  2 p i (b) ni  p i (c) ni  p i (d) ni  p i
3. When mobility is high,
(a) Drift current increases (b) resistivity decreases
(c) drift velocity increases (d) all of these
4. The correct relation for density of states is
dn dE
(a) g ( E )  (b) g ( E )  (c) g ( E )  dn dE (d) g ( E )  dn dE
dE dn
5. For a semiconductor at 0 K
(a) valence band is totally filled (b) valence band is partially filled
(c) conduction band is totally filled (d) conduction band is partially filled
6. ______________ model describes the origin of band gap in semiconductor.
7. Effective mass of electron in ________________ band is positive.
8. When pentavalent impurity is added to an intrinsic semiconductor, the material becomes
________ type semiconductor.
9. If fermi level is closer to conduction band, the material must be _________ type
Semiconductor.
10. ______________ is direct band gap material.
11. Which quantity is measured by UV-VIS method?
12. Give an example of ternary semiconductor material useful in optoelectronic devices.
13. Quantum well is 2-dimensional material. True or False?
14. What is fermi energy level?
15. Define bandgap.
Q.2 Answer the following questions. (Attempt any three) (15)
A) Explain the formation of energy bands in solids.
B) Explain direct and indirect band gap materials using E-K diagram.
C) Derive the formula for effective mass of electron in conduction band.
D) Explain briefly about quantum dots, quantum wells and quantum wires.
Q.3 A) Answer the following
1. What is density of states? Derive the relation for density of states and plot the graph of (04)
density of states as a function of energy.
2. Explain the classification of solid materials based on energy band gap. (03)

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B) Answer the following

1. Calculate the concentrations of electrons and holes in a Si material with band gap 1.12 eV at (04)
temperature 300 K. The fermi energy level is 0.25 eV below the conduction band. Given
N C  2.8  1019 cm 3 , NV  1.04  1019 cm 3 , K  1.38  10 23 J / K
2. Write any four applications of low dimensional materials in optoelectronic devices. (04)
OR
B) Explain UV-VIS method for the measurement of bandgap. (08)
Q.4 A) Explain stimulated absorption, spontaneous emission and stimulated emission in detail. (07)
OR
A) Explain four-probe method for the measurement of resistivity. (07)
B) Answer the following
1. Explain the methods to extract any two parameters from I-V characteristics of diode. (05)
2. Explain briefly about P-type semiconductors.. (03)

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