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Infineon BTN7971B DS v02 00 en
Infineon BTN7971B DS v02 00 en
Infineon BTN7971B DS v02 00 en
0, June 2008
BTN7971B
High Current PN Half Bridge
NovalithIC™
Automotive Power
High Current PN Half Bridge
BTN7971B
Table of Contents
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.3 Half-bridge Configuration Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
1 Overview
Features
• Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ @ 25 °C)
High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ @ 25 °C)
Low Side: max. 17.7 mΩ @ 150 °C (typ. 9 mΩ @ 25 °C)
• Low quiescent current of typ. 7 μA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Enhanced switching speed for reduced switching losses
• Switched mode current limitation for reduced power dissipation
in overcurrent
PG-TO263-7-1
• Current limitation level of 50 A min. / 70 A typ. (low side)
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behavior
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Green Product (RoHS compliant)
• AEC Qualified
Description
The BTN7971B is a integrated high current half bridge for motor drive applications. It is part of the NovalithIC™
family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver
IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing
EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs,
diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature,
overvoltage, undervoltage, overcurrent and short circuit.
The BTN7971B provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption.
Block Diagram
2 Block Diagram
The BTN7971B is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a integrated high current
half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to
the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a
microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current
sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage,
undervoltage, overcurrent and short circuit. The BTN7971B can be combined with other BTN7971B to form H-
bridge and 3-phase drive configurations.
VS
Overcurr.
Detection
HS
Overtemp.
detection Gate Driver
IS HS
OUT
Digital Logic LS off HS off
IN
Gate Driver
LS
INH
Overcurr.
Slewrate Detection
SR
Adjustment LS
GND
2.2 Terms
Following figure shows the terms used in this data sheet.
IGND , I D( LS)
Figure 2 Terms
Pin Configuration
3 Pin Configuration
1234 5 67
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
100
90
80
70
60
|I max | [A]
50
40
30
20
10
0
1,0E-03 1,0E-02 1,0E-01 1,0E+00 1,0E+01
t pulse[s]
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
General
5.1.1 Supply Current IVS(on) – 2 3 mA VINH = 5 V
VIN = 0 V or 5 V
RSR = 0 Ω
DC-mode
normal operation
(no fault condition)
5.1.2 Quiescent Current IVS(off) – 7 12 µA VINH = 0 V
VIN = 0 V or 5 V
Tj < 85 °C
– – 65 µA VINH = 0 V
VIN = 0 V or 5 V
25
I V S (o f f ) [µA]
20
15
10
0
-40 0 40 80 120 160
T [°C]
RON(LS ) [mΩ]
20 20
15 15 Tj = 150°C
Tj = 150°C
10 10 Tj = 25°C
Tj = 25°C
Tj = -40°C
Tj = -40°C
5 5
4 8 12 16 20 24 28 4 8 12 16 20 24 28
VS [V] VS [V]
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
High Side Switch - Static Characteristics
5.2.1 ON State High Side Resistance RON(HS) mΩ IOUT = 20 A; VS = 13.5 V
– 7 Tj = 25 °C
– 10 12.8 Tj = 150 °C
5.2.2 Leakage Current High Side IL(LKHS) – – 1 µA VINH = 0 V; VOUT = 0 V
Tj < 85 °C
– – 50 µA VINH = 0 V; VOUT = 0 V
Tj = 150 °C
5.2.3 Reverse Diode Forward-Voltage VDS(HS) V IOUT = -9 A
High Side1) – 0.9 1.5 Tj = -40 °C
– 0.8 1.1 Tj = 25 °C
– 0.6 0.8 Tj = 150 °C
Low Side Switch - Static Characteristics
5.2.4 ON State Low Side Resistance RON(LS) mΩ IOUT = -20 A; VS = 13.5 V
– 9 – Tj = 25 °C
– 14 17.7 Tj = 150 °C
5.2.5 Leakage Current Low Side IL(LKLS) – – 1 µA VINH = 0 V; VOUT = VS
Tj < 85 °C
– – 10 µA VINH = 0 V; VOUT = VS
Tj = 150 °C
5.2.6 Reverse Diode Forward-Voltage VSD(LS) V IOUT = 9 A
Low Side1) – 0.9 1.5 Tj = -40 °C
– 0.8 1.1 Tj = 25 °C
– 0.7 0.9 Tj = 150 °C
1) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR
IN
t
t dr(HS ) t r(HS ) t df (HS ) tf (HS )
VOUT
90% 90%
ΔVOUT ΔVOUT
10% 10%
IN
t
tdf (LS ) t f (LS ) tdr(LS ) tr(LS )
VOUT
90% 90%
ΔV OUT ΔVOUT
10% 10%
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
• ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
• ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)).
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 2 Ω, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
High Side Switch Dynamic Characteristics
5.2.7 Rise-Time of HS tr(HS) µs
0.2 0.6 1 RSR = 0 Ω
– 1 – RSR = 5.1 kΩ
0.8 2.7 6 RSR = 51 kΩ
5.2.8 Slew Rate HS on1) ΔVOUT/ V/µs
tr( HS) 10.8 18 54 RSR = 0 Ω
– 10.8 – RSR = 5.1 kΩ
1.8 4 13.5 RSR = 51 kΩ
5.2.9 Switch on Delay Time HS tdr(HS) µs
1.2 2 2.8 RSR = 0 Ω
– 2.8 – RSR = 5.1 kΩ
2 7.8 15 RSR = 51 kΩ
5.2.10 Fall-Time of HS tf(HS) µs
0.25 0.65 1.1 RSR = 0 Ω
– 1 – RSR = 5.1 kΩ
0.8 3.6 7 RSR = 51 kΩ
5.2.11 Slew Rate HS off1) -ΔVOUT/ V/µs
tf(HS) 9.8 16.6 43.2 RSR = 0 Ω
– 10.8 – RSR = 5.1 kΩ
1.5 3 13.5 RSR = 51 kΩ
5.2.12 Switch off Delay Time HS tdf(HS) µs
1 1.6 2.2 RSR = 0 Ω
– 2.3 – RSR = 5.1 kΩ
1 6 11 RSR = 51 kΩ
1) Not subject to production test, calculated value; |ΔVOUT|/ tr(HS) or |-ΔVOUT|/ tf(HS)
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 2 Ω, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Low Side Switch Dynamic Characteristics
5.2.13 Rise-Time of LS tr(LS) µs
0.2 0.55 0.9 RSR = 0 Ω
– 1 – RSR = 5.1 kΩ
0.8 2.6 6 RSR = 51 kΩ
5.2.14 Slew Rate LS switch off1) ΔVOUT/ V/µs
tr(LS) 12 19.6 54 RSR = 0 Ω
– 10.8 – RSR = 5.1 kΩ
1.8 4.2 13.5 RSR = 51 kΩ
5.2.15 Switch off Delay Time LS tdr(LS) µs
0.3 0.8 1.3 RSR = 0 Ω
– 1.2 – RSR = 5.1 kΩ
0.8 3.6 7 RSR = 51 kΩ
5.2.16 Fall-Time of LS tf(LS) µs
0.15 0.5 0.85 RSR = 0 Ω
– 1 – RSR = 5.1 kΩ
0.8 2.8 6 RSR = 51 kΩ
5.2.17 Slew Rate LS switch on1) -ΔVOUT/ V/µs
tf(LS) 12.7 21.6 72 RSR = 0 Ω
– 10.8 – RSR = 5.1 kΩ
1.8 3.9 13.5 RSR = 51 kΩ
5.2.18 Switch on Delay Time LS tdf(LS) µs
1.8 2.7 3.6 RSR = 0 Ω
– 3.8 – RSR = 5.1 kΩ
3 10 18 RSR = 51 kΩ
1) Not subject to production test, calculated value; |ΔVOUT|/ tr(LS) or |-ΔVOUT|/ tf(LS)
IL
tCLS
ICLx
ICLx 0
85 ICLH0 Tj = -40°C
I C L L [A]
I C L H [A]
80 Tj = 25°C 80
Tj = 150°C
ICLL0
75 Tj = -40°C
Tj = 25°C
70 70
Tj = 150°C
65
60 60
55
50 50
0 500 1000 1500 2000 0 500 1000 1500 2000
Figure 10 Typical Current Limitation Level vs. Current Slew Rate dI/dt
I C L L [ A]
I C L H [ A]
85 85
Tj = -40°C
80 80
Tj = 25°C
75 Tj = 150°C 75
Tj = -40°C
Tj = 25°C
70 70
Tj = 150°C
65 65
60 60
6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20
VS [V] VS [V]
In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.
This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN7971B
compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short
time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor
start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction
temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Under Voltage Shut Down
5.3.1 Switch-ON Voltage VUV(ON) – – 5.5 V VS increasing
1)
5.3.2 Switch-OFF Voltage VUV(OFF) 3.0 – 4.5 V VS decreasing,
IN = 1, INH = 1
3.0 – 5.5 V VS decreasing,
IN = 0, INH = 1
5.3.3 ON/OFF hysteresis VUV(HY) – 0.2 – V –
Over Voltage Lock Out
5.3.4 Switch-ON Voltage VOV(ON) 27.8 – – V VS decreasing
5.3.5 Switch-OFF Voltage VOV(OFF) 28 – 30 V VS increasing
5.3.6 ON/OFF hysteresis VOV(HY) – 0.2 – V –
Current Limitation
5.3.7 Current Limitation Detection level ICLH0 55 77 98 A VS = 13.5 V
High Side
5.3.8 Current Limitation Detection level ICLL0 50 70 90 A VS = 13.5 V
Low Side
Current Limitation Timing
5.3.9 Shut OFF Time for HS and LS tCLS 70 115 210 µs VS = 13.5 V
Thermal Shut Down
5.3.10 Thermal Shut Down Junction TjSD 155 175 200 °C –
Temperature
5.3.11 Thermal Switch ON Junction TjSO 150 – 190 °C –
Temperature
5.3.12 Thermal Hysteresis ΔT – 7 – K –
5.3.13 Reset Pulse at INH Pin (INH low) treset 4 – – µs –
1) With decreasing Vs < VUV(OFF)max, activation of the Current Limitation mode may occur before Undervoltage Shut Down
with ambient temperatures less than 25°C.
ESD-ZD ESD-ZD
IS IS
IIS~ ILoad IIS~ ILoad
Sense Sense
IIS(lim) output RIS VIS output R IS V IS
IIS(lim)
logic logic
IIS [mA]
IIS(lim)
e
v alu
i s
kil
er
low u e
val
lis
r ki
hi ghe
ICLx IL [A]
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Control Inputs (IN and INH)
5.4.1 High level Voltage VINH(H) – 1.75 2.15 V –
INH, IN VIN(H) – 1.6 2
5.4.2 Low level Voltage VINH(L) 1.1 1.4 – V –
INH, IN VIN(L)
5.4.3 Input Voltage hysteresis VINHHY – 350 – mV –
VINHY – 200 –
5.4.4 Input Current high level IINH(H) – 30 150 µA VIN = VINH = 5.3 V
IIN(H)
5.4.5 Input Current low level IINH(L) – 25 125 µA VIN = VINH = 0.4 V
IIN(L)
Current Sense
5.4.6 Current Sense ratio in static on- kILIS 103 RIS = 1 kΩ
condition 14 19.5 25 IL = 40 A
kILIS = IL / IIS 13 19.5 26 IL = 20 A
11 19.5 29 IL = 10 A
5.4.7 Maximum analog Sense Current, IIS(lim) 4 5 6.5 mA VS = 13.5 V
Sense Current in fault Condition RIS = 1kΩ
Application Information
6 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
IN
OUT
M OUT
IN
IS IS
SR SR
RIS12 RSR1 GND GND RSR2
470Ω 0..51kΩ 0..51kΩ
Application Information
RIN RINH
10kΩ 10kΩ
BTN7971B
VS CSc
INH 470nF
IN
OUT
M
IS
SR
RIS
RSR GND
1kΩ
0..51kΩ
Package Outlines
7 Package Outlines
4.4
10 ±0.2
1.27 ±0.1
0...0.3
A B
8.5 1)
0.05
1±0.3
2.4
7.551)
9.25 ±0.2
0.1
(15)
2.7 ±0.3
4.7 ±0.5
0...0.15
7 x 0.6 ±0.1 0.5 ±0.1
6 x 1.27
0.25 M A B 8˚ MAX.
0.1 B
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut. GPT09114
Footprint
10.8
9.4
16.15
4.6
0.47
0.8
8.42
Revision History
8 Revision History
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.