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ES13 - BJT As A Switch

Objectives:

• DC Biasing

• Transistor as a switch

• Troubleshooting

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Jim Duffy - Technological University Dublin

https://www.youtube.com/watch?v=J4oO7PT_nzQ&ab_channel=TheEngineeringMindset

ES13 - BJT As A Switch

DC Biasing:

• A transistor must be properly biased with dc voltage in order to operate as an electronic switch.

• The two pn junctions are normally biased in one of the three biasing combinations, as follows:

Base-Emitter Junction Base-collector Junction Operating Region


Reverse biased Reversed biased Cutoff
Forward biased Reverse biased Active
Forward biased Forward biased Saturation

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ES13 - BJT As A Switch
Operation of the BJT as a switch:

• Switching applications are the second major application area for BJT. For this operation a
transistor is normally operated alternatively in cutoff and saturation. As shown below.
• In Fig. (a) the BJT is cutoff because the base-emitter junction is not forward biased and there is
an open between collector and emitter.
• In Fig. (b) the BJT is saturated because the base-emitter junction is forward biased and the base
current large enough to cause the collector current to reach its saturated value and there is a short
between collector and emitter.

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ES13 - BJT As A Switch

Operation of the BJT as a switch (continued):

Conditions in Cutoff:
• The base emitter junction is not forward biased. All the currents are approximately zero.

• VCE(cutoff)  VCC and IC = 0

Conditions in Saturation:
• When the base emitter junction is forward biased and there is enough base current to produce a
maximum collector current, the transistor is saturated.

• VCE  0 and IC(sat) = VCC / RC

• Minimum base current needed to produce saturation is: IB(min) = IC(sat) / DC

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ES13 - BJT As A Switch
Example: For the transistor shown determine:

(a) What is VCE when VIN = 0V


(b) What min. value of IB is required to saturate this transistor if DC = 200
(c) Calculate the max. value of RB when VIN = 5V

(a) VCE = VCC = 10V (transistor is in cutoff)

VCC 10
(b) I C ( sat )    0.01 A or 10 mA
RC 1000
I C ( sat ) 10 103
I B (min)    50 106 A or 50 A
 DC 200

KVL: Vin=V_RB+0.7 =>


(c) VRB  VIN  0.7  5  0.7  4.3 V

Ohm Law
VRB 4.3V
Max. value of RB needed to allow a min. IB = 50A is: RB (max)  
IB 50 106
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Jim Duffy - Technological University Dublin RB (max)  86000  or 86k

ES13 - BJT As A Switch

In Circuit DMM Test – Importance of Point of Measurement in Troubleshooting:

If the initial measurement was taken on the transistor lead itself, see Fig. (a), and an open were
internal to the transistor you would have measured VCC indicating a faulty transistor.

However, if the measurement was taken as in Fig. (b), the first measurement at the output side of
the resistor indicated VCC, then a second test point is needed to establish the cause of the fault.
In this case it is an open connection at the collector terminal pad.

Fig.(a) Fig.(b) 6
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ES13 - BJT As A Switch
Troubleshooting:

Example: What fault(s) are indicated by the measurements given in the figure below.

(a) 10V on the collector lead indicates the transistor is in cutoff.

(b) The 3V reading on the PC board contact but not on the base lead of the transistor indicates an
open external to the transistor.

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ES13 - BJT As A Switch

Troubleshooting (continued):

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ES13 - BJT As A Switch

Troubleshooting (continued):

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ES13 - BJT As A Switch

Summary:

• A transistor can be operated as an electronic switch.

• Cutoff for a BJT is an operating state where IC = 0 (no current).

• Saturation for a BJT is an operating state where IC has reached a maximum (max. current)

• A transistor must be properly biased with dc voltage in order to operate as an electronic switch.

• Transistors can be tested using our knowledge for testing diodes

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ES14 - BJT's (Amplifiers)

Objectives:

• Discuss transistor biasing

• BJT Class A Amplifier

• Collector Characteristic Curve


• DC Load Line
• Q-point (dc operating point)
• Voltage divider bias
• BJT Class A Amplifier

• Troubleshooting

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Jim Duffy - Technological University Dublin

ES14 - BJT's (Amplifiers)


BJT – DC Biasing:

• A transistor must be properly biased with dc voltage in order to operate as an amplifier.


Therefore a transistor can be used to produce a larger signal using a smaller signal as a “pattern”.

• When you bias a transistor, you establish the dc voltage and current values, e.g. at the dc
operating point, IC and VCE have specified values.

• The dc operating point is often referred to as the Q-point

• The two pn junctions are normally biased in one of the three biasing combinations,
as follows:

Base-Emitter Junction Base-collector Junction Operating Region


Reverse biased Reversed biased Cutoff
Forward biased Reverse biased Active
Forward biased Forward biased Saturation

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ES14 - BJT's (Amplifiers)

BJT Biasing – Transistor Operating Regions:

Cutoff operating region:- is a BJT operating state where IC = 0 and VCE = VCC

Saturation operating region:- is a BJT operating region where IC reaches its maximum value
and the relationship IC = IB no longer holds. This is like a short
between from collector to emitter i.e. VCE = 0.

Active operating region:- is the BJT operating region required for transistor to work
properly as an amplifier.

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ES14 - BJT's (Amplifiers)


How to Bias a transistor?
• For the transistor to work properly as an amplifier, the two pn junctions must be correctly biased
with external dc voltages.

• The proper bias arrangement for both the npn and pnp transistors is shown below. Note that in
both cases the base-emitter (BE) junction is forward biased and the (BC) base-collector junction
is reverse biased. This is called forward-reverse bias.
BC BC
reverse reverse
biased biased

BE forward BE forward
biased biased

The amount of current flow in the base-emitter circuit controls the amount of current that
flows in the collector circuit. Small changes in base emitter current yields a large change in
collector current.
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ES14 - BJT's (Amplifiers)
BJT Transistor – Collector Characteristic Curves:
• With a circuit such as that shown on the previous slide Saturation Breakdown
Region
curves can be generated. Region

Active Region

• The collector characteristic curve shown in (a) illustrates


the relationship between IC, and VCE for one value of IB.

• The base current, IB, is established by the base bias.


(a)
• When several IB versus IC curves are plotted for a given
transistor, a composite graph similar to the one shown in
(b) is created.

• A collector curve is divided into three parts:


- The saturation region
(b)
- Active region
- Breakdown region

Cutoff
• Note that the IB = 0 line represents the operation of the Region
transistor when it is in cutoff
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ES14 - BJT's (Amplifiers)


The DC Load Line:
• A straight line drawn on the collector curves between the cutoff and saturation points of the
transistor is called the dc load line. This line represents all the possible combinations of IC and
VCE for a given transistor circuit.

• As we have already seen the two max. operating points for a BJT are cutoff and saturation.

• Applying Kirchoff’s voltage law to the collector loop: VCC  I C RC  VCE  0

Rearranging: VCC VCE


IC  
RC RC
V
At saturation VCE is zero: VCE  0  I C  CC
RC
(like short circuit from
emitter to collector)

At cutoff IC = 0 (like an open circuit from emitter to collector): I C  0  VCC  VCE

• This gives two points to form a straight line plotted on the collector characteristic curves
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ES14 - BJT's (Amplifiers)
The DC Load Line & Q Point:

• The dc load line is plotted between the saturation and cutoff points in the graph below.

• The linear (active) operating region of a transistor lies along the dc load line below saturation
and above cutoff.
Ideal saturation = VCC / RC
IB
• As long as the transistor is operated in this 5

region, the output voltage is ideally a linear IB


reproduction of the input. dc load line
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IB
3
Q Point
• The point at which the base current curve IB
2
intersects the dc load line is the Q-Point for
the circuit. The coordinates for the Q-point IB
1
are the values for IC and VCE at that point.

• The Q point for IB2 is shown.


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ES14 - BJT's (Amplifiers)


Q – Point (dc operating point):
(1/2,1/2)
• For linear operation of an amplifier. It is desirable to have the Q-point centered on the load line.
Therefore VCE is half the value of VCC, and IC is half the value of IC(sat) as shown below.

• The amplifier is said to be midpoint biased when it is designed to have a centered Q-point.

• Midpoint biasing allows optimum ac operation of the amplifier.

Mid-Point Based
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ES14 - BJT's (Amplifiers)
If Q–Point (dc operating point) is not at the centre line:

• Note: VCEQ, IBQ, and ICQ are dc Q-point values. AC values are indicated by lower case subscript
values.

• When the Q-point is not mid-point biased, the transistor may be driven into saturation or cutoff,
and the input wave may be limited or clipped.
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ES14 - BJT's (Amplifiers)


Q – Point (dc operating point) (continued):

• Note: VCEQ, IBQ, and ICQ are dc Q-point values. AC values are indicated by lower case subscript
values.

• When the Q-point is not mid-point biased, the transistor may be driven into saturation or cutoff,
and the input wave may be limited or clipped.
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ES14 - BJT's (Amplifiers)
The DC Load Line and Q-point – Example: Determine the dc load line and Q-point for the
circuit. Amme te r

RC
NPN Tra nsisto r 330ohm Voltme te r
Be ta = 2 00
VCC
RB 20V

VBB 47kohm
10V

Find the cutoff and saturation points to construct the dc load line:

V 20
At saturation VCE is zero:  CC 
I C Transistor
2N2222A
( sat ) XMM2
XMM1  0.0606 A or 60.6 mA
(as there is no resistor RE)
RC 330

At cutoff IC = 0: VCE  VCC  20V


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ES14 - BJT's (Amplifiers)


The DC Load Line and Q-point – Example (continued):

Q-point is defined by IC and VCE:

IB 
VBB  VBE   10  0.7  198 106 A or 198 A
RB 47000
I C  I B  (200)(198 106 )  0.0396 A or 39.6 mA

VCE  VCC  I C RC  20  (0.0396)(330)  6.93 V

Q-point is at IC = 39.6mA and VCE = 6.93V

IC
60.6mA Saturation
Q-point
39.6mA DC Load Line

Cutoff

VCE
6.93V 20V 12
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