CEPF630/CEBF630 March 1998 N-Channel Enhancement Mode Field Effect Transistor a FEATURES + 200V,,10A, Rosiou=400m2 @VGS=10V, + Super high dense cell design for extremely low Rosi, + High power and current handling capably. + 10-220 & TO-268 package. ° a, Sg 4 % x D ° no CEP SERIES i") Tox ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage vos 200 v Gate-Source Voltage Vos 220 v Drain Current-Continuous 'o 10 A Pulsed om 20 A Drain-Source Diode Forward Current is 10 A Maximum Power Dissipation @Tc=25°C PD 1 Ww Derate above 25°C 06 wire Operating and Storage Temperature Range | Tu,Tste | —-65 to 150 c THERMAL CHARACTERISTICS Thermal Resistance, Junction to-Case Rose 18 “ow Thermal Resistance, Junctonto-Ambient | — RoJa 625 “ow 4q77CEPF630/CEBF630 ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter ‘Symbol Condition Min } Typ | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Vokage BVoss | _Vos=0V, I0=250)A 200 v Zero Gate Voltage Drain Current loss ‘Vos =160V, Vos=0V. 25 | yA Gate-Body Leakage loss Ves=+20V, Vos=0V +100} nA ON CHARACTERISTICS* Gate Threshold Voltage Vestn) | Vos=Ves, lo= 250A 2 [29] 4] V Drain-Source On-State Resistance Roson) | Ves=10V, lo =5A 265 | 400 | ma On-State Drain Current Loon) Ves=10V,Vos=10V | 10 A Forward Transconductance Ss Vos=10V, lo=5A 3 | 6 $s DYNAMIC CHARACTERISTICS" Input Capacitance Ciss 646 | 800 | oF Vos=25V, Ves= OV Output Capacitance Coss | ts 0M 405 | 140 | °F Reverse Transfer Capacitance rss 96 | 50 | PF SWITCHING CHARACTERISTICS” Turn-On Delay Time ‘toioN) 50 | 60 | ns Rise Time te [| 80 | 120 | ns ‘Turn-Off Delay Time {DFR 55 | 80 | ns Fall Time th 40 | 50 | ns Total Gate Charge Q 5 | 60 | nc Gate-Source Charge Qs ie 4 ay [n=53h, 5 nc Gate-Drain Charge Que 7 nc 4478CEPF630/CEBF630 ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter ‘Symbol Condition Min | Typ | Max | Unit o DRAIN-SOURCE DIODE CHARACTERISTICS * Diode Forward Voltage Vso Vos = 0V, Is=10A og} 15 | V Notes aPuse TestPulse Width <300 us, Duty yee < 2%, ‘Guaranteed by design, not subject to production testing Ib, Drain Vos, Drain-to-Source Vattage (V) Vas, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics & Vos, Drain-Source Voltage (V) Ip, Drain Curren) Figure 3. Capacitance Figure,4. On-Resistance Variation with Drain Current and Temperature 4.179CEPF630/CEBF630 Faso 3 “| 3 105 S10 = oss] ® ¢ | Faso g o3s| @ os 080 Eos 1 duncion Temperature (6) “Thsunction Temperature) Figure S. Gate Threshold Variation _-Figure 6. Breakdown Voltage Variation with Temperature wrth Temperature * a4 ; Fos a &, 2 los, Drai-Souee Curent (A) ‘Veo, Bay Dade Fomar Vote Figure 7. Transconductance Variation _ Figure &, Body Diode Forward Voltage wrth Drain Current ‘Variation with Source Current -* Beh asses 2 i & g ? Ss ‘Single Pulse] 8 eae 0 ore es Wa 1 ‘0 vo 2 5 Tl ai charg Vos Dan-Souee Vege) Figure 9, Gate Charge Figure 10, Maximum Safe ‘Operating Area 4-180CEPF630/CEBF630 Your ‘hing Test Circuit rmal mpodarce Normalized Etectve Transient INVERTED PULSE WIDTH Figure 12. Switching Waveforms ‘Square Wave Pulse Duration (meee) Figure 13. Normalized Thermal Transient Impedance Curve 4181