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VOL. 7, NO.

2, FEBRUARY 2023 2000104

Sensor materials

Development of a Reliable Zinc Oxide Thin-Film-Based Ammonia Gas Sensor


Jitesh Agrawal , Mayoorika Shukla, and Vipul Singh
Molecular and Nanoelectronics Research Group, Department of Electrical Engineering, IIT Indore, Indore 453552, India

Manuscript received 26 October 2022; revised 26 December 2022; accepted 7 January 2023. Date of publication 10 January 2023; date of current version
27 January 2023.

Abstract—In this work, a simple ZnO thin-film-based ammonia gas sensor fabricated via a straightforward and cost-
effective sol-gel technique has been demonstrated. The as-prepared device was found to be extremely sensitive toward
ammonia gas and has shown a high response of 13.5% at concentrations as low as 10 ppm at an optimal temperature of
180 °C (much lower than the threshold value of 25 ppm). The device response was observed to be linear up to 70 ppm
ammonia concentration with a response of 51% corresponding to it. The simplicity, repeatability, low production cost, and
high efficiency have made the device a potential candidate for various future applications, especially in industries where
ammonia sensing is critical.

Index Terms—Sensor materials, ammonia, gas sensor, sol–gel technique, zinc oxide.

I. INTRODUCTION et al. [13] utilized Ag-doped ZnO nanoflowers and Devi et al. [5]
has used strontium-doped ZnO thin films. Moreover, various ZnO
In recent years, sensors and electronics related to it have been nanocomposites have also been developed namely ZnO-MWCNT and
explored exhaustively and applied to the areas such as triboelec- ZnO-CuO core hollow cubes for obtaining better gas sensor response
tric nanogenerator-based sensor systems [1], motion monitoring and [14], [15]. Noteworthily, the most common approach used to develop a
human-machine interface, etc. [2], biosensors [3], and gas sensors ZnO-based gas sensor is to use pre-synthesized ZnO nanostructures to
[4]. However, it has been a challenge to fabricate a gas sensor for prepare a paste or slurry by mixing them with some binder e.g., ethanol,
the selective detection of toxic gases at low concentrations with high ethyl cellulose, and terpineol [16]. Which, in turn, was coated on the
sensitivity. substrate to obtain a ZnO thin film with a high aspect ratio. However,
Recently, ammonia gas sensing has gained a lot of attention from the the major disadvantage of such a process has been observed to be the
research community due to its wide applications in different industries nonuniform film with poor adhesion over the substrate [17]. Further,
such as plastic, fertilizers, chemical, refrigerators, pesticides, etc. the use of such binder leads to poor electrical contact between both the
Detection of ammonia beyond a certain threshold, i.e., 25 ppm has been interfaces, i.e., ZnO/electrode and between nanostructures themselves.
crucial for human health. Moreover, it may cause fire and explosions Also, it blocks the gas molecules to reach active sites, which adversely
in industries where either it has been used as a precursor or emitted as affects the performance of device [18]. Therefore, using ZnO thin
an intermediate or end by-product [5]. film directly grown on the substrate could significantly improve the
A variety of metal oxides such as TiO2 , SnO2 , WO3 , NiO, CuO, device sensing response. Henceforth, in this work, we have developed a
ZnO, etc., have been used to develop high-sensitivity ammonia gas ZnO thin film-based ammonia gas sensor. A relatively straightforward
sensors. Amongst different types of metal oxide semiconductors, ZnO and single-step sol-gel technique has been utilized to obtain ZnO thin
has emerged as the most suitable material for fabrication of the same film and a simple device structure. It has been observed to exhibit
owing to its high thermal and chemical stability, electron mobility, and a better response in comparison to some of the recently published
tunable aspect ratio of nanostructures and electronic energy states. In works, which have followed complex device structure and synthesis
addition to this, the piezoelectric property of ZnO has resulted in the techniques.
design and fabrication of innovative self-powered sensing devices [6].
Further, ZnO thin films and nanostructures can be synthesized on a
large scale via sol-gel techniques at a comparatively lower temperature, II. EXPERIMENTAL WORK
making the process simple and cost-effective [7].
In the past, efforts have been made toward the improvement of Pre-cut glass samples of 1.5 cm × 1.5 cm were ultrasonically
the gas sensor figure of merits. In this regard, Zhu et al. [8] have cleaned in acetone, isopropanol, and DI (deionized) water for 10 min
used pristine ZnO nanorods and nanosheets, Kanaparthi et al. [9] each. Thereafter, the precursor solution has been prepared by mixing
have synthesized ZnO nanoflakes, Wang et al. [10] have used Pt- equimolar (3M) zinc acetate and ethanolamine in 2-methoxy ethanol
loaded ZnO nanosheets, Wang et al. [11] have uniformly dispersed Ag followed by stirring at 350 rpm for 6 h. Then the precursor solution
nanoparticles over ZnO Nanoparticles for gas sensing applications. was spin-coated over the cleaned glass substrates at 3000 rpm for 30
Further, doped ZnO has also been employed for the same such as s and annealed at 240 ˚C for 5 min for better crystallinity. Then the
Namgung et al. [12] have doped Al in ZnO nanorods, whereas Tsai Pt interdigitated electrodes (IDEs) of 500 µm channel length were
deposited using DC sputtering techniques at 60 W DC power.
The photoluminescence (PL) analysis of the samples was performed
Associate Editor: J. Gardner. using DongwooOptron DM 500 I, equipped with a 325 nm continuous
Corresponding author: Vipul Singh (E-mail: vipul@iiti.ac.in)
This work was supported by Indian Space Research Organisation (ISRO), under
wave He-Cd (excitation wavelength 325 nm) and a photomultiplier
the ISRO RESPOND Scheme under Grant ISRO/RES/3/849/19-20. tube (PMT) detector. UV-VIS-NIR Perkin-Elmer Lambda 750 has
Digital Object Identifier 10.1109/LSENS.2023.3235890 been used to obtain the absorption spectra of the samples. To record

2475-1472 © 2023 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
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2000104 VOL. 7, NO. 2, FEBRUARY 2023

Fig. 1. Optical characterization of the samples. (a) UV-Vis spec- Fig. 3. (a) Time-dependent response recovery behavior of as-
troscopy; inset shows absorption spectra in the visible region. (b) PL fabricated gas sensor. (b) Gas sensor response to different ammonia
spectroscopy analysis. gas concentrations.

Fig. 4. A schematic of change in the depletion region of ZnO thin film


Fig. 2. (a) Device schematic. (b) Optimization of the temperature to after purging the ammonia in the gas sensing chamber.
maximize the gas sensing response.

the gas sensing response of the fabricated device, the Keithley 2612A decrease in temperature leads to the adsorption of the gas molecules.
source meter unit has been used. Aalborg DPC17 mass flow controller Therefore, it is highly desirable to optimize the sensing temperature
was used to regulate the gas flow while purging the air-gas mixture so that the gas adsorption–desorption equilibrium can be established.
in the sensing chamber. The airflow was maintained at 2 Kg/cm2 Fig. 2(b) shows the ammonia sensing response as a function of tem-
throughout the gas-sensing characterization process. perature ranging from 80 to 280 °C. It has been observed that the gas
sensing response has increased with the increase in temperature to
180 °C. However, further increasing the temperature has resulted in a
III. RESULTS AND DISCUSSION significant reduction in the response. Therefore, 180 °C temperature,
where the maximum response has been achieved was considered for
The absorption spectra of the ZnO thin film sample have been further characterization.
shown in Fig. 1(a). High and sharp band edge absorbance in the near Fig. 3(a) shows the typical response recovery behavior of the gas
UV region, which corresponds to the band-to-band transition in ZnO sensor, i.e., change in the resistance of ZnO for varied ammonia
has been observed which corresponds to the better crystallinity of concentrations. The device was found to be highly sensitive to am-
the sample. Further, there was considerable absorption in the visible monia even at concentrations as small as 10 ppm. Furthermore, the
region [shown in the inset of Fig. 1(a)], which indicates the presence device response was observed to increase linearly with the ammonia
of mid-gap energy states, e.g., singly and doubly charged oxygen concentration as shown in Fig. 3(b). The gas sensor response has
vacancies. increased from 13.5% to 51% with the increase in concentration from
Fig. 1(b) shows the PL spectra of the sample. An intense and sharp 10 to 70 ppm. In addition to this, it was observed to be highly linear
emission peak, centered at 380 nm, known as near band emission in this range.
(NBE) of ZnO, signifies the high crystallinity of the as-prepared ZnO Fig. 4 explains the gas sensing mechanisms of the ZnO thin film-
thin film. Further, a broad emission peak in the visible region was based device: As the oxygen molecules come in the vicinity of ZnO,
observed which could be attributed to the deep energy levels, i.e., they would get adsorbed over the surface. These adsorbed oxygen
charged and neutral oxygen vacancies, present in the sample. It was molecules capture the free electron from the ZnO surface and form
evident from the Absorption and PL spectroscopy that the sample O− ions (1) which lead to increase in the resistance of the ZnO thin
consists of a large number of oxygen vacancies-related defect states. film. Thus, a depletion region is formed over the surface and hence
These vacancies act as preferential sites for the absorption of oxygen the resistance of the ZnO thin film increases significantly. Further,
molecules which may lead to improvement in the efficiency of the as the ammonia-air mixture is injected into the chamber, the ammonia
gas-sensing device [19]. molecules react with O− ions resulting in the formation of N2 and H2 O.
Fig. 2(a) shows the device schematic of the as-prepared gas sensor. Also, the electrons captured by the adsorbed oxygen were released
The typical time-dependent response recovery behavior of the gas back into ZnO, which thereby restores the resistance of the film (2).
sensor has been recorded at 10 V of applied bias. The sensing response The chemical reactions involved in the NH3 sensing can be ex-
is calculated as S = ((Ra-Rg)/Ra)×100%, where Ra and Rg are the plained as follows [20]:
resistance of the device in zero air and zero air-ammonia mixture,
respectively. The device response depends significantly on the sensing O2 (ads) + 2e− ↔ 2O−
(ads) (1)
temperature, as the increase in temperature leads to the desorption of
the oxygen gas molecules from the active layer surface, whereas the 2NH3 + 3O−
(ads) ↔ N2 + 3H2 O + 3e . −
(2)

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VOL. 7, NO. 2, FEBRUARY 2023 2000104

Therefore, the proposed device could be a potential candidate for


future applications where a lower concentration of ammonia sensing
is required.

ACKNOWLEDGMENT
Jitesh Agrawal is thankful to SIC, IIT Indore for Providing the Required Research
Facility and J. A. and V. S. are also thankful to Indian Space Research Organisation
(ISRO) for providing the financial support under the ISRO RESPOND Scheme (Project
No.: ISRO/RES/3/849/19-20).

Fig. 5. (a) Device stability analysis. (b) Device sensing response for
ammonia and CO gases at 50 ppm.
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