UNIT-6

SUBJECTIVE QUESTIONS
6.1 CLASSIFICATION OF OUTPUT STAGES

1. Classify the output stages and mention their conduction angles with collector
current waveforms.

2. Define power conversion efficiency.

6.2 CLASS A OUTPUT STAGE

1. Explain the circuit operation of class A output stage with transfer characteristics.

2. Derive the power conversion efficiency of class A output stage.

6.3 CLASS B OUTPUT STAGE

1. What is called crossover distortion? How it can be eliminated?

2. Explain the circuit operation of class B output stage with transfer characteristics.

3. Derive the power conversion efficiency of class B output stage.

4. Consider the complementary-BJT class B output stage and neglect the effects of
finite VBE and VCEsat. For ±10V power supplies and a 100 Ω load resistance, what
is the maximum sine-wave output power available? What supply power
corresponds? What is the power-conversion efficiency? For output signals of half
this amplitude, find the output power, the supply power, and the power-conversion
efficiency.
5. Consider the class B BJT output stage with a square wave output voltage of
amplitude V0 across a load RL and employing power supplies ±VSS. Neglecting the
effects of finite VBE and VCE sat, determine the load power, the supply power, the
power-conversion efficiency, the maximum attainable power-conversion efficiency
and the corresponding value of Vo, and the maximum available load power. Also
find the value of Vo at which the power dissipation in the transistors reaches its
peak, and the corresponding value of power conversion efficiency.

6. Design a class B output stage to deliver an average power of 100 W into a 16 Ω

load. The power supply should be 4 V greater than the corresponding peak sine-
wave output voltage. Determine the power-supply voltage required (to the nearest
volt in the appropriate direction), the peak current from each supply, the total
supply power, and the power-conversion efficiency. Also, determine the maximum
possible power dissipation in each transistor for a sine-wave input.

7. A class B output stage operates from ±5V supplies. Assuming relatively ideal
transistors, what is the output voltage for maximum power-conversion efficiency?
What is the output voltage for maximum device dissipation? If each of the output
devices is individually rated for 1W dissipation, and a factor-of-2 safety margin is
to be used, what is the smallest value of load resistance that can be tolerated, if
operation is always at full output voltage? If operation is allowed at half the full
output voltage, what is the smallest load permitted? What is the greatest possible
output power available, in each case?

6.5 CLASS AB OUTPUT STAGE

1. Explain the circuit operation of class AB output stage with transfer
characteristics.

2. Explain biasing techniques of class AB output stage.

6.6 BIASING CLASS AB CIRCUITS

1. With necessary diagrams, explain diode based biasing of class AB circuits.

2. Explain the class AB amplifier circuit biasing using VBE multiplier technique.
3. Explain briefly about various biasing techniques used for Class AB Power
amplifier.

6.7 POWER BJTS

1. Describe Power BJTs.

2. What is Thermal Resistance & Draw its electrical equivalent circuit?

3. Explain the thermal resistance property of Power BJTs.

4. What is thermal runaway? How it can be avoided?

5. What is the significance of Heat Sink in power transistors? Explain with the
electrical equivalent of Thermal conduction when Heat sink is used.

6. Explain the parameters of power transistors.

7. A particular transistor having a thermal resistance θ]A = 2°C/W is operating at an

ambient temperature of 30°C with a collector-emitter voltage of 20 V. If long life
requires a maximum junction temperature of 130°C, what is the corresponding
device power rating? What is the greatest average collector current that should be
considered?
8. A particular transistor has a power rating at 25°C of 200 mW, and a maximum
junction temperature of 150°C. What is its thermal resistance? What is its power
rating when operated at an ambient temperature of 70°C? What is its junction
temperature when dissipating 100 mW at an ambient temperature of 50°C?
9. A power transistor is specified to have a maximum junction temperature of
130°C. When the device is operated at this junction temperature with a heat sink,
the case temperature is found to be 90°C. The case is attached to the heat sink with
a bond having a thermal resistance θCS = 0.5°C/W and the thermal resistance of the
heat sink θSA = 0.1°C/W. If the ambient temperature is 30°C what is the power
being dissipated in the device? What is the thermal resistance of the device, θ ]C,
from junction to case?

10. A power transistor for which TJmax = 180°C can dissipate 50 W at a case
temperature of 50°C. If it is connected to a heat sink using an insulating washer for
which the thermal resistance is 0.6°C/W, what heat-sink temperature is necessary
to ensure safe operation at 30 W? For an ambient temperature of 39°C, what heat-
sink thermal resistance is required? If, for a particular extruded-aluminum-finned
heat sink, the thermal resistance in still air is 4.5°C/W per centimeter of length,
how long a heat sink is needed?