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TVS Diode - Application
TVS Diode - Application
Current (I) %
I30
energy previously stored or induced by other means, such as
heavy inductive loads or lightning. In electrical or electronic I60
tr = 0.7 to 1.0ns
Repeatable transients are frequently caused by the operation
of motors, generators, or the switching of reactive circuit Figure 2: ESD Test Waveform
components. Random transients, on the other hand, are
often caused by Lightning and Electrostatic Discharge (ESD). The exponential rise time of lightning is in the range 1.2µsec
Lightning and ESD generally occur unpredictably, and may to 10µsec (essentially 10% to 90%) and the duration is in the
require elaborate monitoring to be accurately measured, range of 50µsec to 1000µsec (50% of peak values). ESD on
especially if induced at the circuit board level. Numerous the other hand, is a much shorter duration event. The rise time
electronics standards groups have analyzed transient voltage has been characterized at less than 1.0ns. The overall duration
occurrences using accepted monitoring or testing methods. is approximately 100ns.
The key characteristics of several transients are shown in the
table below. Why are Transients of Increasing Concern?
VOLTAGE CURRENT RISE-TIME DURATION Component miniaturization has resulted in increased sensitivity
Lighting 25kV 20kA 10 µs 1ms to electrical stresses. Microprocessors for example, have
Switching 600V 500A 50µs 500ms structures and conductive paths which are unable to handle
EMP 1kV 10A 20ns 1ms high currents from ESD transients. Such components
ESD 15kV 30A <1ns 100ns operate at very low voltages, so voltage disturbances must
be controlled to prevent device interruption and latent or
Table 1: Examples of transient sources and magnitude
catastrophic failures.
TVS Diode Transient Voltage Scenarios The switching of inductive loads generates high energy
transients which increase in magnitude with increasingly heavy
loads. When the inductive load is switched off, the collapsing
Electrostatic Discharge (ESD)e magnetic field is converted into electrical energy which takes
the form of a double exponential transient. Depending on
Electrostatic discharge is characterized by very fast rise times
the source, these transients can be as large as hundreds
and very high peak voltages and currents. This energy is
of volts and hundreds of Amps, with duration times of 400
the result of an imbalance of positive and negative charges
milliseconds.
between objects.
ESD that is generated by everyday activities can far surpass Typical sources of inductive transients include:
the vulnerability threshold of standard semiconductor
• Generator • Motor
technologies. Following are a few examples:
• Relay • Transformer
• Walking across a carpet:
35kV @ RH = 20%;1.5kV @ RH = 65% These examples are common in electrical and electronic
• Walking across a vinyl floor: systems. Because the sizes of the loads vary according to the
12kV @ RH = 20%;250V @ RH = 65% application, the wave shape, duration, peak current and peak
• Worker at a bench: voltage are all variables which exist in real world transients.
6kV @ RH = 20%;100V @ RH = 65% Once these variables can be approximated, a suitable
suppressor technology can be selected.
• Vinyl envelopes:
7kV @ RH = 20%;600V @ RH = 65% The diagram at right V T
• Poly bag picked up from desk: shows a transient T1
20kV @ RH = 20%;1.2kV @ RH = 65% which is the result of 90%
stored energy within
Lightning Induced Transientse the alternator of an VS
automobile charging
Even though a direct strike is clearly destructive, transients system. 10%
EMI Limiting
EMI Limiting A.C. Supply
A.C. Supply Protection
Protection
AC Supply Protection
A.C.
+ Supply Protection
+EMI Limiting
EMI Limiting
Elector-Magnetic Interference
A.C. Supply Protection
Limiting
+
+ DC output DC output
TVS TVS DC output
TVS TVS
DC Input DC Input DC output
LoadTVS Load
TVS DC Input TVS
TVS
DC Input
Load Load
- - DC motor DC motor
- DC motor
- DC motor
Operational
Operational Amplifier
Amplifier
Operational Amplifier
Operational
Operational Amplifier Protection Amplifier
RL
- -
RL
- OR -
- - RL
+I
C
+IC
RL
- OR - + + -
- - - OR -
- + IC - OR -
R- I
+
TVS
+TVS C
+ TVS TVS
TVS
(A) TVS (A)TVS (B) (B) TVS
(A)
(B) (A) (B)
GND Choke
Primary
Protection:
AK10-030
TVS Diode Fuse
TVS for PWM
SMDJ28A
(Pulse Width Modulate
TVS Diode
Cx Cx
400VDC
Fuse
TVS Secondary
0451001 CM Choke NM Choke
Cy
PWM
Shield Ground
LED Driver
LED Driver Protection
C5
LinkSwitch-PL
BP 1 μF
U1
FP 16 V
CONTROL
LNK458KG
R1 R3
3.3 kΩ 3.3 kΩ C4 R3
D1 R4
1 μF 2.2 Ω
DFL5160-7 3.3 kΩ
16 V 1% RTN
L1 L2 D S
D2
BR1 1.2 mH 1.2 mH
DFLS1200-7
MB6S R5
600 V
L
C3 C1 C2 L3 3 C6 C7 VR1
100 nF 33 nF VR2 68 nF EE10 10 nF 22 μF 1N4756A
85 - 135 RV1 SMAJ350A
VAC 140 VAC 500 V 630 V 250 V 330 μH 50 V 50 V 47 V
1
N F1
35 V, 130 mA
5A
TVS
0461.600 TVS
SMBJ6.0CA
RS232 TX FUSE
1
04611.25ER 6
GDT 2
TVS
7
SMDJ15CA SL1411A075SM
3
TVS TVS GDT 8
SMDJ15CA SMDJ15CA SL1411A075SM 4
9
5
PGND PGND
TVS GDT
SMDJ15CA SL1411A075SM
FUSE
RS232RX
04611.25ER
TVS GDT GDT
SMDJ15CA SL1411A075SM SL1411A075SM
FUSE
RS232GND
04611.25ER
TVS GDT
SMDJ15CA SL1411A075SM
Inverter
Inverter / VFD protection
/ VFD protection inProtection
in IGBT Module IGBT Module
TVS Diode AK3-430
L1
L2 Motor
L3
IGBT
Rg
TVS Diode
SMBJ16CA
Rge