AP9972GS/P

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low Gate Charge BVDSS 60V

D
▼ Single Drive Requirement RDS(ON) 18mΩ
▼ Surface Mount Package ID 60A
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, G D
low on-resistance and cost-effectiveness.
S TO-263(S)

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP)
are available for low-profile applications.
G TO-220(P)
D
S
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±25 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 60 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 38 A
1
IDM Pulsed Drain Current 230 A
PD@TC=25℃ Total Power Dissipation 89 W
Linear Derating Factor 0.7 W/℃
3
EAS Single Pulse Avalanche Energy 450 mJ
IAR Avalanche Current3 30 A
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W

Data and specifications subject to change without notice 1

200803183
AP9972GS/P

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=35A - - 18 mΩ
VGS=4.5V, ID=25A - - 22 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=35A - 55 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=48V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±25V - - ±100 nA
2
Qg Total Gate Charge ID=35A - 32 51 nC
Qgs Gate-Source Charge VDS=48V - 8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 20 - nC
2
td(on) Turn-on Delay Time VDS=30V - 11 - ns
tr Rise Time ID=35A - 58 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 45 - ns
tf Fall Time RD=0.86Ω - 80 - ns
Ciss Input Capacitance VGS=0V - 3170 5070 pF
Coss Output Capacitance VDS=25V - 280 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF
Rg Gate Resistance f=1.0MHz - 1.7 - Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=35A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=35A, VGS=0V, - 50 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

2
 AP9972GS/P

200 150
10V 10V
7.0V 7.0V
ID , Drain Current (A)

150

ID , Drain Current (A)

100
5.0V
5.0V

100
4.5V
4.5V

50

50

V G =3.0V T C = 150 C
o V G =3.0V
o
T C =25 C

0 0
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

20 1.6

I D = 25 A I D =35A
T C =25 o C 1.4
V G =10V
Normalized RDS(ON)

18
RDS(ON) (mΩ)

1.2

1.0

16

0.8

14 0.6
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
20 1.7

15
Normalized VGS(th) (V)

T j =150 o C T j =25 o C
1.2
IS(A)

10

0.7

0 0.2
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP9972GS/P
f=1.0MHz
12 10000

I D = 35 A
VGS , Gate to Source Voltage (V)

10

V DS =48V C iss

8
V DS =38V
V DS =30V

C (pF)
6 1000

C oss
2
C rss

0 100
0 20 40 60 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

100 0.2

100us
ID (A)

0.1

0.1
1ms
0.05

PDM
10 10ms 0.02
t
T

T C =25 o C
0.01

Duty factor = t/T

Single Pulse 100ms Single Pulse Peak Tj = PDM x Rthjc + T C

DC
1 0.01
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

100

VG
V DS =5V
80
ID , Drain Current (A)

T j =25 o C T j =150 o C QG
4.5V
60

QGS QGD
40

20

Charge Q
0
0 2 4 6 8

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

4
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-220

E1
E A
SYMBOLS Millimeters
φ L1 MIN NOM MAX
L2 A 4.25 4.48 4.70
L5 b 0.65 0.80 0.90
c1
b1 1.15 1.38 1.60
c 0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
D E1 --- --- 11.50
L4 e ---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
b1 L2 1.00 1.40 1.80
L3 L3 2.6 3.10 3.6
L4 14.70 15.50 16
L5 6.30 6.50 6.70
L
φ 3.50 3.60 3.70
D 8.40 8.90 9.40

b c
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-220

Part Number
Package Code
9972GP
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence

5
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-263

E
SYMBOLS Millimeters
MIN NOM MAX
A 4.25 4.75 5.20
A1 0.00 0.15 0.30
A2 2.20 2.45 2.70
D b 0.70 0.90 1.10
b1 1.07 1.27 1.47
c 0.30 0.45 0.60
c1 1.15 1.30 1.45
L2 b1 D 8.30 8.90 9.40
L3 E 9.70 10.10 10.50
e 2.04 2.54 3.04
b
L2 ----- 1.50 -----
L3 4.50 4.90 5.30

e L4 L4 ----- 1.50 ----

A
A2 1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.

c θ
c1
A1

Part Marking Information & Packing : TO-263

Part Number
Package Code
XXXXXS
9972GS
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence