UNIVERSITY OF CINCINNATI

EECE 5141/6041: Microfabrication Lab for Semiconductor Devices and MEMS

Lab P06: Boron Ion Implantation and Annealing/Drive-in

Procedures

1. Boron Ion Implantation

(a). The ion implantation parameters for satisfying the conditions are as follows.
Energy: 50 keV
Dose: 8×1014 #/cm2
Species: Boron
Offset (tilt): 7 degrees
Rp (projected range): 1,566 Å
ΔRp (projected range): 504 Å
(b). Remove PR with AZ NMP Rinse (Positive PR Stripper) at 80-90°C for about 1 hour.
(c). Perform Baker Clean process

2. Annealing/Drive-in and oxidation

Annealing is carried out at 900°C for 30 minutes in nitrogen gas to heal the damaged tracks in
the semiconductor crystal lattice due to high-energy implantation and also to activate the
implanted boron. After this, the drive-in and oxidation processes are carried out at 1000 °C.
The process conditions for this step are as follows.

Dry O2 10 min Si + O2 → SiO2

Wet O2 40 min Si + 2H2O → SiO2 + 2H2
Dry O2 10 min Si + O2 → SiO2
Unload wafer in N2 (idle gas)

3. Measure the oxide thickness.

4. Protect the front side of the wafer with PR coating. [Recipe 28 in Lab P02]

HMDS coating → PR coating → Hard bake

5. Dip the PR coated wafer in BOE solution to remove the oxide on the back side of the wafer to
prepare for anodic bonding. Calculate the time for BOE according to the oxide thickness.

6. Remove PR with AZ NMP Rinse. Clean wafer with acetone, IPA and DI water to make sure
PR residue is fully removed.