University of Jordan

Mechatronics Engineering Department

Circuit and Electronics Lab. (0908223)
Experiment 2: Diode characteristics

Objectives
To study and verify the functionality of a PN junction diode in forward bias and reverse biase
Theory:
The diode is a device formed from a junction of n-type and p-type
semiconductor material. The lead connected to the p-type material is
called the anode and the lead connected to the n-type material is .the
cathode. diodes only conducts current in one direction (Forward
bias operation). An ideal diode will have zero resistance in one
direction (Reverse bias operation), and infinite resistance in the
reverse direction. In general, the cathode of a diode is marked by a
solid line on the diode.
Forward bias operation:
In forward bias operation the positive terminal of a source is
connected to the p-type side and the negative terminal of the
source is connected to the n-type side of the diode and if we
increase the voltage of this source slowly from zero there is no
current flowing through the diode. Until the voltage reach cut in
voltage (Vɣ) then current will pass.

This potential barrier is called forward potential barrier. The

majority charge carriers start crossing the forward potential
barrier only when the value of externally applied voltage across
the junction is more than the potential of the forward barrier. For
silicon diodes, the forward barrier potential is 0.7 volt and for
germanium diodes, it is 0.3 volt.

When the externally applied forward voltage across the diode becomes more than the forward
barrier potential, the free majority charge carriers start crossing the barrier and contribute the
forward diode current. In that situation, the diode would behave as a short-circuited path, and the
forward current gets limited by only externally connected resistors to the diode.

Reverse bias operation:

Reverse bias is the condition that essentially prevents current through the diode. Figure 2–6 shows a
dc voltage source connected across a diode in the direction to produce reverse bias. This external
bias voltage is designated as VBIAS just as it was for forward bias. Notice that the positive side of
VBIAS is connected to the n region of the diode and the negative side is connected to the p region.
Also note that the depletion region is shown much wider than in forward bias or equilibrium.
Procedure:

A. Forward bias operation:

1- Construct the circuit in figure 2.2 a.

2- Turn the voltage supply knob fully CCW at 0V before switching
the power on.
3- Switch on the Dc power supply and increase the voltage slowly
and record the corresponding current and voltage values as in the following table:
(experiment results*)

0 94.34 188.96 285.33 383.84 476.61 0.5533 0.569 0.593 0.611 0.62 0.645
mV mV mV mV

0 0 0 0 0.026 0.153 0.51 1.1 1.77 2.527 3.26 4.91 * mA

4- After finishing set the output of the DC power supply to zero then switch it off.
B. Reverse bias operation:

1-Reverse the polarity of the voltage supply as in figure 2.2 b and repeat the previous steps with
filling the following table: (multism results*)

7µV -1 -2 -5

-0.07µA -0.333µA -0.444µA -0.888µA

2-Draw the i-v characteristics curve of the diode on the given graph
paper.
3- Find the approximate forward-bias turn-on voltage. 0.6V

4- Write the equation of the load line for the circuit when draw it on the same (i-v) characteristic
curve (Vs= 1.5 V), Find Vd and Id from the graph. (use excel or matlab to draw the curve)
5- find Id Vd using piecewise model (Vs=1.5V)
5- From diode datasheet find Vf, maximum reverse voltage