Department of Electrical Engineering

Indian Institute of Technology, Kanpur

EE 311 Home Assignment #9 Assigned: 20.3.23 Due: 27.3.23

1. For the tunnel diode considered in Ex.4.21 of text, if the valley voltage is 300 mV, roughly
estimate the average value of the resistance exhibited by the diode in the negative resistance
region. Compare this with the value of Rmin found in the example. What can you infer from
this comparison? Also, determine the forward voltage VF, at which the forward current IF
equals Ip, assuming that the saturation current of the diode is equal to 1.4 fA.

2. Consider that a varactor diode having hyper-abrupt doping profile, is used in an FM (88-108
MHz) radio tuner circuit in association with a 1 mH inductor. If the zero bias depletion
capacitance of the junction is 1 pF, determine the range of the reverse bias required in order
to achieve this tuning. Assume that the built-in potential of the junction is 0.9 V.

3. Consider an LED fabricated in a direct band gap material, having a band gap of 2 eV. What is
the emission wavelength of the radiation and what is its color? If the device has an optical
conversion efficiency of 25%, and the required number of photons emitted per second is 1017,
determine the required forward current of the device, if the device is forward biased by 2.5 V.

4. A photodetector shows a photocurrent of 20 mA with a responsivity of 0.4 A/W, under

illumination with the ideal wavelength. If the device operates with a quantum efficiency of
70%, determine: i) the incident optical power, ii) the band gap of the material, and iii) the
ideal wavelength.

5. Prove Eqs.(4.97) and (4.98) of text.