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Onit 4

FET

T C deite n hich flo ot


Curve -thvoghh he Conduth
a eloukn fhel
Controlled

Canouuuhm
1S du
The Curre
Corrieog
hen
o maony
Called uni Po lar dewice

FET

SFeT MosFET

N- Chawrel P- Chonne

SFET TFCT

Constrchon Of
-chownel TFET

3ource
he ermi ro is Conneched he
neahve Pole of he batterY Electvoms
OYe
mojon CoorYIess in th

N-ype emtep e ba hooh


hig erminov
Tem hal

ole He
RhvNe

moyor h CoYieo

ennu nal

Gote
do ped lim i5 dised
Hecwily P-yPe
of Siicon
on
On both Sidess he N-tyPe
bor which PN Jwnctiong CAYe firrned
by
4esns Co joined Tgees

Calle d Gate G'

Chawnol:-

Yeon B he
N-ype
bar beneem he deplen oM Yea un

Called Chonel

COmstruchom n-Ckawnel TFET


amd mbol-
Drain o)

Gate

Snru CS
ren (D)
Covta

N
o Source (S)

Semiconduhyy
Smal
A
and
tak
mererCd, Y type
oknic
ContaS
two
hwo ends
e
C w h c d

mode of FeT.
T minas
Souwe

drain Cnd

P tyPe
doped elueoks

H eaily
wLhs

P-n
bar

hn earo) bekaem e

Called chann
plakes

P- chauurel FET
Dran (b

P
ohmit
( o v a i S

Coher

Snsd CS)

Unbiased JFET
Dvoin ())

ohi Conlauy

Depleh

Sa

Hhe ablente aPplied


Vooqe GFET os channe
diunuhoms nden no bas Condihm
eoh durnh oM
Deplah Shm
charac terishe Parameher3 o FFET

the droin
Curfeut
1D cePeudg
JFET

he dran volto Vps oud

the Vol tage Vas

u Vus

Mutuo Conductoute O Trous Con duchomia

ha Yatio a Small chag


Small
he drain CurreA he

Hha voltage a
cho
Conatout droun voltog

ALD
Vus AVus
Ves

8:8tauue- Cra)
Small

he droin to he
chage M

Congat
Cuaner
AVns
i 8 C o n s t a u s

1
VDs Vus

Amplificahon oaso r)
he rouho of goll c
Hhe gmoul
in Hhe Jroin votage
votto o a
choa he e
Constoum doun Cusran

Los A Vps

AVys
Hhot ken
Here Ne Sign
be
18 incoese Vos
reuai
decowRa
Cons tot

APplicahon GF ET

FeTs
vbvoge vasiablo
Yes i9, h
oPerohianal aunpli hey

Fers
CiruS in
FM nd roeives

OS iabr
Mos F ET (Melol Ode Semi nduuntrr

field Effect raus)s tor

MoSFETT tha Commo

he InSulated Cyate field effect 7vausi

CTGFeT)
Tere ore oSic ferms L MosF6T
a) Enhausenen NosFET

b)Deplehiom Mos FeT

Enhanemiut MosFE T

Substra
Substrae
o 6

N- Conred
channal

F++4+
NT

Inducbd
N-chorel
P-T1Pe Substrate

N chane &nhaunumeus MOSFe


chamnol n C
The no Conhinons

MoSFET, +his Condihn


enhounemet
Tha bYDkon ine
Ye pragened
Symbols
are
TO gg doped N regions
Substrate
do ped
Siffuse in lighhly
of P-type Silton

Soura and
Ome Nt Yea n Colad

is Caled Ha dro-n D
D
he oHe

A loger of Sioa
in in uah
of He shruuh
Surtace
on O Ver tha
Cut im to he nida laye
holes are

Contectf with Soura aud drain


alluwia
in loyen o ra aluminjun

he laen o Sio°
S tormed
This mral ayo Coves he ewhre
ChomneA regi m Qud torms he

OPerohion

Hhe Substyrae S arounded and a

appliee Hhe
Vottoge
sikve chang on
gale, He
gahve Vo lhge
mdunes
Substrak 8ida be hween

Sonre and dvain

he dire ch m Hhe elechric.


P e r pediculah
fiedd is

of
Capo hor
thngk
plas
Hhe Oudle

The elackravs
egakve
chaoe
Caoyes
wch a9h mnon'y
Substrae
e P- t9Pe

lae
As Hhe Posihve volga on ha

gade Hh ndunud nogohve


in h SeiConoluetr
hoa
Hene Con duuhviy
in eosLS
C sewt Lon fro
Inoeog
Hhe indued
Sonr to droin thoogh
Vus 3
Chane
2
naneret
TmA

-JV Deplabn

Vos
Vol awnflere Chaalesi ghi3
De plehon Mas FET

M D

N-ckawme

P yukstreke

D D
?

-o B

N-channl P- channel

and he at
Hith V 0
Potenka wi espet D
asive
he ele croms Plow
Sour
N- Chanel

thwovgh
D. Theatore Cwenh oral

Cunren los Hovgh ho


chamnel D

made
gce vota
Psiive cha
egah ve dhe Chanral
n
in d u e d
hols
qare chamred
of Hhe
hrov9 i0

Capacih

he introduh'm o Po8ihv
depkhom of
Chog Causes deplehn
chonnl
elcrns în ha
Mobie

depehin
Thg
he ckannel
Produred
o Hhe deplahmn egioy
sope
us and
depevds ps
Chounnel will be
Hene ha
g haped.
wedge
When Vos
os ncraed, I increaSeS
beCos Prahcollut Con3haui

Callad
Ceon Valne ob Vps
Pinch oyt Vothoq
also be
depuh'am
MoSFCT mo

enbonnement
mo da
ope rahtd

Enbamismtnk

Deple hm

Toss

- -

Yas Cobb

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