SRMIST, RAMAPURAM CAMPUS

ENGINEERING PHYSICS (LE) - 18PYB104T

Academic Year: 2020-2021
Part-A
1. A conductor has ………… temperature coefficient of resistance.
a. Positive
b. Zero
c. Negative
d. None of the above
Ans. A

2. The Fermi level in a N type -semiconductor lies close to

a. The top of the valence band
b. The top of the conduction band
c. The bottom of the valence band
d. The bottom of the conduction band
Ans. D

3. To make p-type Si, the intrinsic Si is doped with an element of--------

a. Phosphorous
b. Boron
c. Aluminium
d. Both b& c
Ans. d

4. What is extrinsic semiconductor

a. Doped semiconductor
b. Pure semiconductor
c. Semiconductor whose resistance is low
d. Semiconductor doped with metal
Ans. A

5. A n-type semiconductor material is doped with ____________ impurities whereas a p-

type semiconductor material is doped with------------------impurities
a. acceptor, donor
b. acceptor, acceptor
c. donor, donor
d. donor, acceptor
Ans. D

6. Electrons in Fermi level will follow

a Bose Einstein energy Distribution
b Fermi Dirac energy distribution
c Maxwell Boltzmann energy distribution
d both a & c
Ans. b
7. A hole in a semiconductor is defined as …………….
a. A free electron
b. The incomplete part of an electron pair bond
c. A free proton
d. A free nneutr
Ans. b

8. The random motion of holes and free electrons due to thermal agitation is called ……….
a. Diffusion
b. Pressure
c. Ionisation
d. None of the above
Ans: a

9. Which of the following is true in case of an unbiased p-n junction diode?

a. Diffusion does not take place
b. Diffusion of electrons & holes goes on infinitely
c. There is zero electrical potential across the junctions
d. Charges establish an electric field across the junction
Ans. D

10. The Acronym of OLED

a. Organic laser electronic device
b. Organic light emitting diode
c. Output light emitting diode
d. Optoelectronic light emitting diode
Ans. b

11. The basic component of LED is

a. Resistor
b. P-type semiconductor
c. N-type semiconductor
d. pn-junction
Ans. d

12. The forward bias of pn-junctions is connected in such manner

a. N-type is connected to positive terminal and P-type is connected to negative terminal
b. P-type is connected to positive terminal and N-type is connected to negative terminal
c. Both P & N are connected to negative
d. Both P & N are connected to Positive
Ans. b

13. The Break down voltage refers to

 a. The voltage at which the reverse current is minimum
b. The voltage at which the reverse current is maximum
c. The voltage at which the reverse current is zero
d. The voltage at which the forward current is maximum

Ans. b

14. In order to get p-type semiconductor the semiconductor is doped with

a. Pentavalent atom
b. Trivalent atom
c. Dope with metals
d. Dope with rare earth elements

Ans. b

15. The depletion region width of a pn-junction under reverse bias condition
a. Increases
b. Decreases
c. No effect
d. Both b & c

Ans. a

16. A diode behaves as a rectifier which means

a. Allowing current to pass in one direction but not in the opposite direction.
b. Allowing current to pass in both forward and reverse direction
c. No current flow through the diode
d. Current flows in reverse direction

Ans. a
 SRMIST, RAMAPURAM CAMPUS
ENGINEERING PHYSICS (LE) - 18PYB104T
Academic Year: 2020-2021
Part-B
1. A semiconductor whose band gap is.
a. lies between conductor and insulators
b. above conductors
c. bellow insulators
d. None of the above

Ans. A

2. Diffusion Current flow in a semiconductor due to

a. Appled bias
b. Concentration gradient
c. boath a and b
d. Zero bias

Ans. B

3. To make N-type Si, the intrinsic Si is doped with an element of--------

a. Phosphorous
b. Boron
c. Aluminium
d. Both b& c

Ans. A

4. What is intrinsic semiconductor

a. Highly doped semiconductor
b. Pure semiconductor
c. Lightly doped semiconductor
d. Semiconductor doped with metal

Ans. B

5. In the n & p regions of the p-n junction the _________ & the ___________ are the
minority charge carriers respectively.
a. holes, holes
b. electrons, electrons
c. holes, electrons
d. electrons, holes

Ans. C

6. The symbol T in Fermi energy represents

 a Maxwell-Boltzmann constant
b Boltzmann constant
c Wave vector
d Temperature
Ans. d

7. When a pure semiconductor is heated, its resistance …………..

a. Goes up
b. Goes down
c. Remains the same
d. Can’t say

Ans. B

8. Current flow in a semiconductor in the external applied field is called

a. Drift
b. Diffusion
c. Recombination
d. Emission

Ans. a

9. When a physical contact between a p-region & n-region is established which of the
following is most likely to take place?
a. Electrons from N-region diffuse to P-region
b. Holes from P-region diffuse to N-region
c. a & b
d. Nothing will happen

Ans: c

10. The p-n junction diode is works under

a. Reverse bias
b. Forward bias
c. both forward and reverse bias
d. No bias

Ans. b

11. The Acronym of OEICs

a. Optoelectronic induced cells
b. Optoelectronic circuits
c. Optoelectronic integrated circuits
 d. Optoelectronic information cells

Ans. C

12. A diode is a
a. Two terminal electronic device
b. Three terminal electronic device
c. One terminal electronic device
d. Four terminal electronic device

Ans. a

13. The reverse bias of pn-junctions is connected in such manner

a. N-type is connected to positive terminal and P-type is connected to negative terminal
b. P-type is connected to positive terminal and N-type is connected to negative terminal
c. Both P & N are connected to negative
d. Both P & N are connected to Positive

Ans. a

14. Threshold voltage of a pn-junction refers to

a. The voltage at which the forward current start increases
b. The voltage at which the forward current saturates
c. The voltage at which the reverse current increases
d. The voltage at which the reverse current decreases

Ans. A

15. The effect of doping in pure semiconductor leads to

a. Increase in conductivity of semiconductor
b. Decrease in conductivity of semiconductor
c. No effect
d. Resistance of semiconductor increase

Ans. a

16. The depletion region width of a pn-junction under forward bias condition
a. Increases
b. Decreases
c. No effect
d. Both b & c

Ans. b
 SRMIST, RAMAPURAM CAMPUS
ENGINEERING PHYSICS (LE) - 18PYB104T
Academic Year: 2020-2021
Part-A

1. . ............theorem related the surface integral of the curl of a vector to the line integral
of the vector
a. stokes
b. gauss divergence
c. greens
d. cauchys

Ans. a

2. The Ampere law is based on which theorem?

a. Green’s theorem
b. Gauss divergence theorem
c. Stoke’s theorem
d. Maxwell theorem

Ans. c

3. Gauss law cannot be used to find which of the following quantity?

a. Electric field intensity
b. Electric flux density
c. Charge
d. Permittivity
Ans. d

4. Which of the following laws do not form a Maxwell equation?

a. Planck’s law
b. Gauss’s Law
c. Faraday’s law
d. Ampere’s Law
Ans. a

5. Integral form of Maxwell’s’ second equation

a.  B.ds = 0
s
→ →
b.  D • ds =  dv
s
v

d
c. e = −
dt
 dB
d.  E .dl = − 
l s dt
.ds

Ans. A

6. Gradient is applied on
a. Scalar quantity
b. Vector quantity
c. Both a & b
d. None of the above
Ans. a

7. The Stoke’s theorem uses which of the following operation?

(a) Divergence
(b) Gradient
(c) Curl
(d) Laplacian
Answer: (c) Curl

8. The expression for current density is

a. IA
b. IEA
c. I/A
d. E/I

Ans. A

9. The meaning of div B= 0 is

a. B=0
b. There is no existence of an isolated magnetic pole
c. Curl B = 0
d. Flow of current is zero
Ans. b

10. The common feature between ionic polarization and Electronic polarization
a. Both are strongly dependent on temperature
b. Both are responsible for infrared absorption of a dielectric
c. Both are caused by electronic displacements
d. Both the polarizations are unaffected by variations in temperature of the dielectrics
Ans. d

11. If the charge is spread out along a line with charge per unit length λ, then dq =
…………….
(a) dq = λdl
 (b) dq = σda
(c) dq = ρdτ
(d) dq = gdτ
Ans: (a) dq = λdl

12. The Ampere law is based on which theorem?

a) Green’s theorem
b) Gauss divergence theorem
c) Stoke’s theorem
d) Maxwell theorem

Ans. c

13. Gauss law for magnetic fields is given by

a) Div(E) = 0
b) Div(B) = 0
c) Div(H) = 0
d) Div(D) = 0

Ans. b

14. The process of producing electric dipoles are called

a. electronic polarization
b. ionic polarization
c. orientation polarization
d. space charge polarization

Ans. A

15. Space charge polarization will occur in …….. frequency range

a. Electric power
b. audio
c. radio
d. optical
Ans. A

16. In free space, the Poisson’s equation becomes

(a) Maxwell equation
(b) Ampere equation
(c) Laplace equation
(d) Steady state equation
Ans. C
 Part-B

1. The vector field whose Curl is zero is called ..................

a. irrotational
b. rotational
c. conservative
d. solenoid

Ans. a

2. The Gauss divergence theorem converts..........

a. line to surface integral
b. line to volume integral
c. surface to line integral
d. surface to volume integral

Ans. d

3. Maxwell second equation is

a. Div B = 0
b. Curl B = 0
c. Curl E = 0
d. Div b = dE/dt

Ans. b

4. Find the Maxwell equation derived from Faraday’s law.

a. Div(H) = J
b. Div(D) = I
c. Curl(E) = -dB/dt
d. Curl(B) = -dH/dt
Ans. c

5. The Stoke’s theorem can be used to find which of the following?

a. Area enclosed by a function in the given region
b. Volume enclosed by a function in the given region
c. Linear distance
d. Curl of the function
Ans. a

6. The point form of Ampere law is given by

a. Curl(B) = I
b. Curl(D) = J
c. Curl(V) = I
 d. Curl(H) = J
Ans. D

7. If the divergence of the vector field is …………….. at a point then something is

diverging from a small volume surrounding that point and that point is acting as a
source. .
(a) Negative
(b) Positive

(c) Zero
(d) Neutral
Answer: (b)

8. The …………….. is defined as the amount of work done in moving unit positive charge
from infinity to the given point of the field of the given charge against the electrical
force.
(a) Magnetic potential
(b) Electric potential
(c) Laplace equation
(d) Displacement current density
Ans: (b)

9. Maxwell third equation is

a. Curl B = - dE/dt
b. Curl E = - dB/dt
c. Curl B = - dB/dt
d. Curl E = - dM/dt
Ans. B

10. Dielectrics are

a. Electric insulators
b. Electric conductors
c. Materials that work under low voltages
d. Hole conductors
 Ans. A

11. Temperature dependent polarization is

a. Ionic polarization
b. Electronic polarization
c. Orientation polarization
d. Deformation polarization

Ans. c

12. Electric field due to an infinite line of charge is ………..

(a) E= σ/2Πε0r
(b) E= ρ/2Πε0r
(c) E= g/2Πε0r
(d) E= λ/2Πε0r
Ans: (d) E= λ/2Πε0r

13. Divergence theorem is based on

a) Gauss law
b) Stoke’s law
c) Ampere law
d) Lenz law
Ans. A

14. Orientation polarization arises due to presence of

a. conductor
b. polar molecule
c. semiconductor
d. superconductor
Ans. B

15. .……… is existence of permanent dipole in the absence of electric filed?

(a) Non-Polar dielectrics
(b) Polar dielectrics
(c) Dielectric constant
(d) Polarizability
 Ans. B

16. The dipole moment per unit volume of the dielectric material is called ……………
(a) Electric flux
(b) Polar dielectrics
(c) Polarization vector
(d) Polarizability
Ans: (c)
 SRMIST, RAMAPURAM CAMPUS
ENGINEERING PHYSICS (LE) - 18PYB104T
Academic Year: 2020-2021
Part-A
1. Who proposed the concept of Photon-----------
a. Newton
b. Einstein
c. Plank
d. Hygen
Ans: b

2. The process of moving the atoms from the excited state to the ground state is known as-------
a. Absorption
b. Emission
c. Recombination
d. Generation

Ans: b

3. The Einstein coefficient for spontaneous and stimulated emission is____________

a.

b.

c.

d.

Ans. D

4. Coherent time is
a. Coherent length-velocity of light
b. Coherent length + Velocity of light
c. Coherent length/velocity of light
d. Coherent length X Velocity of light
Ans: c

5. Example for four level laser

 a. GaAs laser
b. He-Ne laser
c. Ruby laser
d. All of the above
Ans: b

6. The wavelength of radiation from CO2 lasers is

a. 10.6 micro meter
b. 8 micro meter
c. 5 micro meter
d. 20 micro meter
Ans: a

Part-B

7. The process of raising the atoms from the ground state to the excited state is known as----
---
e. Absorption
f. Emission
g. Recombination
h. Generation
Ans: a

8. The atom in the excited state is given an external energy and is forced to go to the ground state,
this process is known as
a. Spontaneous emission
b. Absorption
c. Stimulated emission
d. Population inversion
Ans: c

9. For a typical laser, the beam divergence is about -------- radian

a. 1 nano
b. 1 micro
c. 1
d. 1 milli
Ans: d
10. The process of making more number of atoms in higher energy level compared to lower
energy level
a. Absorption
b. Emission
c. Both a and b
d. Population inversion
Ans: d

11. ND-YAG laser is

a. Two level laser
b. Three level laser
c. Single level laser
d. Four level laser
Ans: d

12. Optical resonator is

a. Pair of mirrors with 100 % reflectance
b. Pair of mirrors with 0 % reflectance
c. Pair of mirrors with one 100 % reflectance and other partially reflected
d. Pair of mirrors with partially reflectance
Ans: c
 SRMIST, RAMAPURAM CAMPUS
ENGINEERING PHYSICS (LE) - 18PYB104T
Academic Year: 2020-2021
Part-A
1. A Scalar is a quantity which is completely characterized by
a. Direction
b. Magnitude
c. Direction and magnitude
d. Neither direction nor Magnitude
Ans: a

2. If Two or more vector is said to be co terminus vectors

a. Common terminal point
b. Along same line
c. Common initial point
d. Lie in the same plane
Ans: a

3. Vectors having rotational effect are called

a. Collinear vectors
b. Coplanar vectors
c. Axial vectors
d. Polar vectors
Ans: c

4. Electric generator is the application of

a. Electromagnetic force
b. Gravitational force
c. Nuclear force
d. Mechanical force
Ans: a

5. In which year Newton develop theories of gravitation

a. 1800
b. 1600
 c. 1900
d. 1666
Ans: d

6. Second law of equation of motion

a. v = u + at
b. s = ut + ½ at2
c. v = u-at
d. s = ut - ½ at2
Ans: b

Part-B

7. A vector is a quantity which is completely characterized by

e. Direction
f. Magnitude
g. Direction and magnitude
h. Neither direction nor Magnitude
Ans: c

8. Example of a scalar quantity

a. Mass
b. Temperature
c. Volume
d. All of the above
Ans: d

9. The scalar product of two vectors is

a. A X B = AB sinθ
b. A.B = AB cosθ
c. AB = AB sinθ
d. AB = AB cosθ
Ans: b
10. Which force is stronger among others
a. Gravitational force
b. Weak nuclear force
c. Electromagnetic force
d. Both a and b
Ans: c

11. what is acceleration

a. rate of change of time
b. rate of change of length
c. rate of change pressure
d. rate of change of velocity
Ans: d

12. The vector product of two vectors is

a. A X B = AB sinθ
b. A.B = AB cosθ
c. AB = AB sinθ
d. AB = AB cosθ
Ans: a