Module2 - Session3a

www.rajasekarkpronline.blogspot.
com
Dr.P.Rajasekar
Syllabus
Bipolar Junction Transistor
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
Dr.P.Rajasekar
BJT Operation
Region
Advantages and Department of Electronics and Communication Engineering
Applications
–Sri Krishna College of Technology, Coimbatore
BJT
Configuration rajasekarkpr@gmail.com & rajasekar.p@skct.edu.in
Common Emitter
Configuration www.rajasekarkpronline.blogspot.com
Common Collector
Configuration
Common Base
configuration
June 28, 2023
Outline
www.rajasekarkpronline.blogspot.com
Dr.P.Rajasekar
Syllabus
1 Syllabus
Bipolar
Junction
Transistor 2 Bipolar Junction Transistor
Construction and
Working principle
Construction and Working principle
Current Component
BJT Operation
Current Component
Region
Advantages and BJT Operation Region
Applications
BJT
Advantages and Applications
Configuration
Common Emitter
Configuration
3 BJT Configuration
Common Collector
Configuration
Common Base
Common Emitter Configuration
configuration
Common Collector Configuration
Common Base configuration
Syllabus I
Dr.P.Rajasekar
Course Objective
Syllabus
1 To provide a comprehensive understanding of diodes and
Bipolar
Junction transistors.
Transistor
Construction and
Working principle
Course Outcome:
Current Component
BJT Operation
CO5Examine the principle of operation of BJT, JFET and
Region
Advantages and MOSFET. [AN]
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Transistor I
Dr.P.Rajasekar
☞ A bipolar junction transistor (BJT) is a type of transistor
Syllabus
that uses both electrons and holes as charge carriers.
Bipolar
Junction
Transistor
☞ A bipolar junction transistor is a three-terminal
Construction and
Working principle
semiconductor device that consists of two p-n junctions
Current Component which are able to amplify or magnify a signal.
BJT Operation
Region
Advantages and ☞ It is a current controlled device.
Applications
BJT ☞ The three terminals of the BJT are the base, the
Configuration
Common Emitter
collector, and the emitter.
Configuration
Common Collector
Configuration
☞ we join together two individual PN diodes back-to-back
Common Base
configuration ☞ The fusion of these two diodes produces a three layer.
Transistor II
Dr.P.Rajasekar
☞ The flow of charge in a Bipolar transistor is due to the
Syllabus diffusion of charge carriers between the two regions
Bipolar
Junction
belonging to different charge concentrations.
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure
Construction I
Dr.P.Rajasekar
☞ BJT is a semiconductor device that is constructed with 3
Syllabus
doped semiconductor Regions i.e. Base, Collector &
Bipolar
Junction Emitter separated by 2 p-n Junctions.
Transistor
Construction and
Working principle
BJT Junction model
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration Figure: BJT Junction
Construction II
Dr.P.Rajasekar
The two junctions which are produced between these three
Syllabus layers are called emitter-base (E/B) junction and collector-
Bipolar
Junction
base Junction (C/B)
Transistor Types of BJT
Construction and
Working principle
Current Component ☞ NPN
BJT Operation
Region A NPN transistor consists of two N-type semiconductor
Advantages and
Applications materials separated through a narrow P-type
BJT
Configuration
semiconductor
Common Emitter
Configuration ☞ PNP
Common Collector
Configuration A PNP transistor comprises an N-type material, which is
Common Base
configuration sandwiched between two P-type materials.
Construction III
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration Figure: BJT - NPN and PNP - Construction
Common Collector
Configuration
Common Base
configuration
Construction IV
Dr.P.Rajasekar
The arrow sign in PNP and NPN transistors symbols is also
Syllabus located on the emitter The direction of the arrow sign reflects
Bipolar
Junction
the direction of flow of conventional current.
Transistor Emitter
Construction and
Working principle
Current Component ☞ This region or electrode of the transistor is most heavily
BJT Operation
Region doped compared to the other two electrodes and it is
Advantages and
Applications located on one side of the transistor.
BJT
Configuration ☞ The basic function of the emitter is supplying the
Common Emitter
Configuration majority of charge carriers (electrons or holes) to the
Common Collector
Configuration base.
Common Base
configuration
☞ The emitters of both PNP and NPN transistors are
forward biased related to the base
Construction V
Dr.P.Rajasekar
☞ The emitter of the PNP transistor supplies hole charges
Syllabus whereas the NPN transistors’ emitter supplies free
Bipolar
Junction
electrons.
Transistor
Construction and
Base
Working principle
Current Component ☞ This is a central part of the transistor, which produces
BJT Operation
Region
Advantages and
two PN junctions between emitter and collector.
☞ Base is quite thin/ narrow (10−6 m) compared to the
Applications
BJT
Configuration emitter and collector
Common Emitter
Configuration
Common Collector
☞ it is also very lightly doped.
Configuration
Common Base
configuration
☞ The function of the base is to control the flow of
charges.
☞ The base-emitter junction is forward biased - there is
very low resistance
Construction VI
Dr.P.Rajasekar
☞ The base-collector junction is reverse biased. -
Syllabus resistance is very high.
Bipolar
Junction Collector
Transistor
Construction and
Working principle
☞ The Collector region of most of the transistors is large
Current Component compared to the emitter region
BJT Operation
Region
Advantages and ☞ Base - Collector is reverse biased.
Applications
BJT ☞ The doping level of the collector lies between the

Configuration
Common Emitter
emitter’s heavy doping and the base’s light doping
Configuration
Common Collector
Configuration
Common Base
configuration
Construction VII
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: NPN Transistor
Construction VIII
Dr.P.Rajasekar
When the anodes of two diodes are connected together it forms
Syllabus an NPN transistor. The current will flow from the collector to
Bipolar
Junction
emitter because the collector terminal is more positive than
Transistor emitter in NPN connection.
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Working principle I
Dr.P.Rajasekar
☞ The transistor can transform its resistance.
Syllabus
Bipolar
☞ The resistance varies in such way that it can either act as
Junction
Transistor
an insulator or conductor by applying small signal
Construction and
Working principle
voltage.
Current Component
BJT Operation
☞ This changing ability makes it able to perform both as an
Region
Advantages and ”Amplifier” or a ”Switch”.
Applications
BJT ☞ It can be used either as a switch or an amplifier at a

Configuration
Common Emitter
single time
Configuration
Common Collector
Configuration
Common Base
configuration
Current components in BJT I
Dr.P.Rajasekar
☞ The conduction of current in NPN transistor is owing to
Syllabus
electrons
Bipolar
Junction
Transistor
☞ The emitter-base junction (JE) is forward biased and the
Construction and
Working principle
collector-base junction (JC) is reversed
Current Component
BJT Operation
☞ the current arrives the transistor through the emitter and
Region
Advantages and this current is called emitter current (IE).
Applications
BJT ☞ This current consists of two constituents – Hole current

Configuration
Common Emitter
(IhE ) and Electron current (IeE ). IeE is due to passage of
Configuration
Common Collector
electrons from base to emitter and IhE is due to passage
Configuration
Common Base of holes from emitter to base.
configuration
IE = IhE + IeE (1)

Current components in BJT II
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: Current Components
Current components in BJT III
Dr.P.Rajasekar
Emitter is heavily doped compared to base. So, the
Syllabus Electron current is negligible compared to Hole current.
Bipolar
Junction
Thus we can conclude that, the whole emitter current in
Transistor this transistor is due to the passage of holes from the
Construction and
Working principle
Current Component
emitter to the base.
BJT Operation
Region Some of the holes which are crossing the junction JE
Advantages and
Applications (emitter junction) combines with the electrons present
BJT
Configuration
in the base (N-type)
Common Emitter
Configuration
Common Collector
Configuration
IB = IE − IC (2)
Common Base
configuration
Emitter Base open
When the emitter circuit is open circuited, then IE = 0
and IhC = 0.
Current components in BJT IV
Dr.P.Rajasekar
In this condition, the base and collector will perform as
Syllabus reverse biased diode.
Bipolar
Junction The collector current, IC will be same as reverse
Transistor
Construction and
saturation current (ICO or ICBO).
Working principle
Current Component current due to Emitter and base forward bias(IE ̸= 0)
BJT Operation
Region
Advantages and
Applications IC = IC 0 + Ihc (3)
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
BJT Operation Region I
Dr.P.Rajasekar
Active Region
Syllabus
Bipolar
Saturation Region
Junction
Transistor Cutoff Region
Construction and
Working principle Cutoff mode
Current Component
BJT Operation
Region Both junctions are reversed biased so no current flows
Advantages and
Applications through the device.
BJT
Configuration transistor is in off mode and acts like open switch.
Common Emitter
Configuration This mode is used for switch OFF application.
Common Collector
Configuration
Common Base
configuration
BJT Operation Region II
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration Figure: Cutoff mode
Common Collector
Configuration
Common Base
configuration
Saturated mode
Both junctions are forward biased so current flows through
the device.
BJT Operation Region III
Dr.P.Rajasekar
Transistor is in on mode and acts like closed switch.
Syllabus
This mode is used for switch ON application.
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
BJT Operation Region IV
Dr.P.Rajasekar
Figure: Saturation mode
Syllabus
Bipolar
Junction
Transistor
Active mode
Construction and
Working principle In this mode, one junction (emitter to base) is forward
Current Component
BJT Operation
biased and another junction (collector to base) is reverse
Region
Advantages and biased.
Applications
BJT This mode is used for amplification of current.

Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
BJT Operation Region V
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: Active mode
Advantages of BJT
BJT Operation Region VI
Dr.P.Rajasekar
It has high frequency operation,
Syllabus
It has high driving capability,
Bipolar
Junction
Transistor
It can be used as digital switch.
Construction and
Working principle Applications
Current Component
BJT Operation
Region
Radio transmitters
Advantages and
Applications Audio amplifiers
BJT
Configuration Televisions
Common Emitter
Configuration Computers
Common Collector
Configuration
Common Base
Mobile phones
configuration
BJT Configuration I
Dr.P.Rajasekar
Types of Configuration
Syllabus
Common Base (CB) Configuration
Bipolar
Junction
Transistor
Common Collector (CC) Configuration
Construction and
Working principle Common Emitter (CE) Configuration
Current Component
BJT Operation
Region
Uses of configuration
Advantages and
Applications Common Base (CB) Configuration: no current gain but
BJT voltage gain
Configuration
Common Emitter
Configuration
Common Collector (CC) Configuration: current gain but
Common Collector
Configuration no voltage gain
Common Base
configuration
Common Emitter (CE) Configuration: current gain and
voltage gain
Common Emitter Configuration I
Dr.P.Rajasekar
Emitter as common terminal for both input and output.
Syllabus
Bipolar
Common emitter configuration is an inverting amplifier
Junction
Transistor
circuit.
Construction and
Working principle The input is applied between base-emitter region and the
Current Component
BJT Operation
output is taken between collector and emitter terminals.
Region
Advantages and
Applications
Input parameters are VBE and IB and the output
BJT parameters are VCE and IC.
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Common Emitter Configuration II
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration Figure: Common Emitter Configuration
Common Collector
Configuration
Common Base
configuration
Common Emitter Configuration III
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: Common Emitter configuration
Input Characteristics
Common Emitter Configuration IV
Dr.P.Rajasekar
The input characteristics of CE are obtained between
Syllabus input current IB and input voltageVBE with constant
Bipolar
Junction
output voltage VCE
Transistor
Construction and
Keep the output voltageVCE constant and vary the input
Working principle
Current Component voltage VBE for different points,
BJT Operation
Region
Advantages and
Record the values of input current at each point.
Applications
BJT
using these values we need to draw a graph between the
Configuration values of IB and VBE at constant VCE
Common Emitter
Configuration
Common Collector
Rin = VBE /IB(when VCE is at constant) (4)
Configuration
Common Base
configuration
Common Emitter Configuration V
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CE Input Characteristics
Output Configuration
Common Emitter Configuration VI
Dr.P.Rajasekar
It is obtained between the output current IC and output
Syllabus voltage VCE with constant input current IB .
Bipolar
Junction Keep the base current IB constant and vary the value of
Transistor
Construction and
output voltage VCE for different points,
Working principle
Current Component Note down the value of collector IC for each point.
BJT Operation
Region
Advantages and Plot the graph between the parameters IC and VCE
Applications
BJT Rout = VCE /IC (when IB is at constant) (5)

Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Common Emitter Configuration VII
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CE -Output Characteristics
Common Collector Configuration I
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: Common Collector Configuration
Common Collector Configuration II
Dr.P.Rajasekar
Collector terminal as common for both input and output
Syllabus signals.
Bipolar
Junction This configuration is also known as emitter follower
Transistor
Construction and
configuration because the emitter voltage follows the base
Working principle
Current Component voltage.
BJT Operation
Region
Advantages and
This configuration is mostly used as a buffer.
Applications
BJT
Widely used in impedance matching applications
Configuration because of their high input impedance.
Common Emitter
Configuration
Common Collector
The input signal is applied between the base-collector
Configuration
Common Base region and the output is taken from the emitter-collector
configuration
region
the input parameters are VBC and IB and the output
parameters are VEC andIE .
Common Collector Configuration III
Dr.P.Rajasekar
The common collector configuration has high input
Syllabus impedance and low output impedance.
Bipolar
Junction The input and output signals are in phase.
Transistor
Construction and
Working principle
Configuration is a non inverting amplifier circuit
Current Component
BJT Operation
Here also the emitter current is equal to the sum of
Region
Advantages and collector current and the base current
Applications
BJT Current Gain calculation

Configuration
Common Emitter
Configuration Ai = IE /IB
Common Collector
Configuration
Common Base
= (IC + IB )/I B
configuration (6)
= (IC /IB ) + 1
Ai = β + 1
Common Collector Configuration IV
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CC - Circuit Configuration

Common Collector Configuration V
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CC- Input Characteristics
Common Collector Configuration VI
Dr.P.Rajasekar
Syllabus VEC = VEB + VBC (7)

Bipolar
Junction
Transistor
Construction and
Working principle
VEB = VEC − VBC (8)
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Output Configuration
Dr.P.Rajasekar
Syllabus It is same as that of common emitter circuit

Bipolar
Junction
Transistor
Construction and
Working principle
Obtained between the output voltageVEC and output
Current Component
BJT Operation
current IE at constant input current IB
Region
Advantages and
Applications
BJT
Configuration
If the base current is zero then the emitter current also
Common Emitter
Configuration
becomes zero
Common Collector
Configuration
Common Base
configuration
If the base current increases then the transistor operates in

active region and finally reaches to saturation region.
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CC- Output configuration
Common Base configuration I
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CB- Configuration

Common Base configuration II
Dr.P.Rajasekar
Use base as common terminal for both input and output
Syllabus signals
Bipolar
Junction A input is applied between the base and emitter
Transistor
Construction and
terminals and the corresponding output signal is taken
Working principle
Current Component between the base and collector terminals with the base
BJT Operation
Region terminal grounded
Advantages and
Applications
the input parameters areVBE and IE and the output
BJT
Configuration parameters areVCB and IC .
Common Emitter
Configuration
Common Collector
The input current flowing into the emitter terminal must
Configuration
Common Base
be higher than the base current and collector current to
configuration
operate the transistor, therefore the output collector
current is less than the input emitter current
Common Base configuration III
Dr.P.Rajasekar
The input and output signals are in-phase in this
Syllabus configuration.
Bipolar
Junction The amplifier circuit configuration of this type is called as
Transistor
Construction and
non-inverting amplifier circuit
Working principle
Current Component It has high output impedance and low input impedance.
BJT Operation
Region
Advantages and
This type of configuration has high resistance gain
Applications
BJT
Voltage Gain
Configuration
Common Emitter
Configuration AV = Vout /Vin = (IC ∗ RL )/(IE ∗ Rin ) (9)
Common Collector
Configuration
Common Base
configuration Current Gain
α = IC /IE (10)
Common Base configuration IV
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CB- Configuration Circuit diagram
Input Characteristics
Common Base configuration V
Dr.P.Rajasekar
Input characteristics are obtained between input current
Syllabus and input voltage with constant output voltage
Bipolar
Junction The output voltage VCB constant and vary the input
Transistor
Construction and
voltage VEB for different points then at each point record
Working principle
Current Component the input current IE value
BJT Operation
Region
Advantages and
The input resistance Rin value is given below.
Applications
BJT
Configuration
Rin = VEB /IIE (11)
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Common Base configuration VI
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CB- Input configuration
Output Characteristics
Common Base configuration VII
Dr.P.Rajasekar
Obtained between output current and output voltage
Syllabus with constant input current.
Bipolar
Junction The emitter current constant and vary the VCB value for
Transistor
Construction and
different points, now record the IC values at each point
Working principle
Current Component output resistance value is given below.
BJT Operation
Region
Advantages and
Applications Rout = VCB /IC (when IE is constant) (12)
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Common Base configuration VIII
Dr.P.Rajasekar
Syllabus
Bipolar
Junction
Transistor
Construction and
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
Figure: CB- Output characteristics
BJT configuration Comparison I
Dr.P.Rajasekar
Syllabus Characteristic Common base (CB) Common emitter,(CE) Common collector,(CC)
Bipolar
Junction Input Dynamic Resistance Very Low(less than 100 ohm) Low(less than 1K) Very High(750K)
Transistor
Construction and
Working principle
Output Dynamic Resistance Very High High Low
Current Component
BJT Operation
Region
Current Gain Less than 1 High Very High
Advantages and
Applications
BJT Voltage gain Greater than CC but less than CE Highest Lowest(less than 1)
Configuration
Common Emitter
Configuration
Power gain Medium Highest Medium
Common Collector
Configuration
Common Base
configuration Leakage current Very small Very large Very large
Relationship between I/p and o/p In phase Out of phase(180º) In phase
Application For High freq. applications For Audio freq. Applications For impedance Matching Applications
Breakdown I
Dr.P.Rajasekar
The Breakdown Region of a transistor is the region where
Syllabus
the collector voltage, Vcc, is so large that the
Bipolar
Junction collector-base diode breaks down, causing a large,
Transistor
Construction and
undesired collector current to flow
Working principle
Current Component
BJT Operation
Region
Advantages and
Applications
BJT
Configuration
Common Emitter
Configuration
Common Collector
Configuration
Common Base
configuration
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Module2 - Session3a

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www.rajasekarkpronline.blogspot.

BJT ☞ The doping level of the collector lies between the

BJT ☞ It can be used either as a switch or an amplifier at a

BJT ☞ This current consists of two constituents – Hole current

IE = IhE + IeE (1)

BJT This mode is used for amplification of current.

BJT Rout = VCE /IC (when IB is at constant) (5)

BJT Current Gain calculation

Figure: CC - Circuit Configuration

Syllabus VEC = VEB + VBC (7)

Syllabus It is same as that of common emitter circuit

If the base current increases then the transistor operates in

Figure: CB- Configuration

Syllabus Characteristic Common base (CB) Common emitter,(CE) Common collector,(CC)

Relationship between I/p and o/p In phase Out of phase(180º) In phase

LATEX was unable to guess the total number of pages correctly.

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