SPECIAL TOPICS – TRANSISTORS AND AMPLIFIERS

1. A class of amplifiers wherein the output signal swings more than 180° but less than
360°.
A. class A
B. class B
C. class C
D. class AB
ANSWER: D

2. Which class of amplifiers that is intended for pulse operation?

A. class B
B. class C
C. class D
D. class S
ANSWER: C

3. For a class B amplifier, the operating point or Q-point is set at

A. the top of the load line
B. saturation
C. the center
D. cutoff
ANSWER: D

4. A push-pull amplifier that uses npn and pnp transistors to amplify the positive and
negative cycles respectively.
A. transformer-coupled push –pull amplifier
B. complementary-symmetry amplifier
C. quasi-complementary push-pull amplifier
D. transformer-coupled class A amplifier
ANSWER: B

5. If three amplifiers with a gain of 8 each are in cascade, how much is the overall gain?
A. 72
B. 24
C. 512
D. 8
ANSWER: C

6. A multistage transistor amplifier arranged in a conventional series manner, the output of

one stage is forward-coupled to the next stage.
A. cascaded amplifier
B. cascoded amplifier
C. darlington configuration
D. feed-back pair configuration
ANSWER: A

7. A two-stage transistor amplifier in which the output collector of the first stage provides
input to the emitter of the second stage. The final output is then taken from the collector
of the second stage.
A. cascade configuration
 B. cascode configuration
C. quasi-complementary
D. complementary amplifier
ANSWER: B

8. Transistor configuration known to have a super-beta (β2).

A. cascade
B. cascode
C. darlington
D. differential
ANSWER: C

9. Transistor arrangement that operates like a darlington but uses a combination of pnp
and npn transistors instead of both npn.
A. differential
B. common
C. cascode
D. feedback pair
ANSWER: D

10. The flow of electron in a NPN transistor when used in electronic circuit is from _______.
A. collector to base
B. collector to base
C. emitter to collector
D. base to emitter
ANSWER: C

11. Which of the three regions/areas in a transistor that is the smallest in construction?
A. emitter
B. collector
C. base
D. all are equal
ANSWER: C

12. The region or area in a transistor that is heavily doped

A. at the junction
B. emitter
C. collector
D. base
ANSWER: B

13. It is a particularly important parameter that provides a direct link between current levels
of the input and output circuits for a common-emitter configuration.
A. α
B. β
C. A and B above
D. none of the above
ANSWER: B

14. It is applied to any system where levels have reached their maximum values
A. saturation
 B. active
C. cutoff
D. quiescent point
ANSWER: A

15. In the active region, the collector-base junction is ________, while the base-emitter
junction is ________.
A. forward and forward-biased
B. forward and reverse-biased
C. reverse and reverse biased
D. reverse and forward-biased
ANSWER: D

16. In dc biasing, it means quiet, still, inactive

A. passive
B. quench
C. static
D. quiescent
ANSWER: D

17. Which transistor configuration has the highest input resistance?

A. common base
B. common emitter
C. common collector
D. common transistor
ANSWER: C

18. Calculate the common-emitter amplification factor β of a transistor with a common-base

amplification factor α=0.99.
A. 10
B. 50
C. 100
D. 200
ANSWER: C

19. For a common-emitter transistor configuration, the hybrid parameter hfe stands for
forward transfer current ratio. This parameter is approximately equal to
A. HFE
B. βac
C. β
D. all of the above
ANSWER: D

20. In most transistor input equivalent circuit it comprises of a resistor and a

A. voltage source
B. stiff voltage source
C. current source
D. stiff current source
ANSWER: A

21. Considered as the basic FET or the simplest form of FET

 A. JFET
B. MOS-FET
C. IGFET
D. VMOS-FET
ANSWER: A

22. Junction field effect transistor or JFET has three terminals, which corresponds to the E-
B-C of the BJT?
A. D-S-G
B. D-G-S
C. S-G-D
D. S-D-G
ANSWER: C

23. A BJT is a current-controlled current-source device while JFET is a _________ device.

A. current-controlled voltage-source
B. voltage-controlled voltage-source
C. voltage-controlled current-source
D. voltage-controlled transconductance-source
ANSWER: C

24. What do you call the area in a JFET where current passes as it flows from source (S) to
drain (D).
A. channel
B. substrate
C. depletion
D. drift
ANSWER: A

25. In MOSFET, it is the foundation upon which the device will be constructed and is formed
from a silicon base
A. substrate
B. slab
C. source
D. base
ANSWER: A