SPECIAL TOPICS – MIDTERM

1. What is the ratio of the input impedance with series feedback to that without feedback?

a. 1 + BA
b. BA
c. B
d. 1

2. Which of the following is required to start oscillation?

a. BA > 1
b. The phase shift around the feedback network must be 180 degrees.
c. Both BA > 1 and the phase shift around the feedback network must be 180 degrees.
d. None of the above

3. Only the condition BA = _____ must be satisfied for self-sustained oscillations to result.

a. 0
b. -1
c. 1
d. None of the above

4. In the Wien bridge oscillator, which of the following is (are) frequency-determining components?

a. Both resistors
b. Both capacitors
c. Both resistors and capacitors
d. None of the above

5. In which of the following applications is a pulsating dc voltage suitable?

a. Battery charger
b. Radio
c. Stereo system
d. Computer

6. Across which of the following components of a power supply does the average (dc) voltage exist?

a. Diodes
b. Secondary of transformer
c. Capacitor filter
d. None of the above

7. What is the purpose of an additional RC filter section in a power supply circuit?

a. Increase the dc voltage component

b. Increase the ac voltage component
c. Decrease the ac voltage component
d. None of the above

8. _______________ allows simplifying a one-port circuit to a current source in parallel with an impedance.

a. Norton’s Theorem
b. Thevenin’s Therorem
c. Kirchoff’s Current Law
d. Faraday’s Law of Magnetic Induction

9. Charge carriers move in semiconductors via two mechanisms: _____ and _______.

a. drift and diffusion

b. drift and avalanche
c. avalanche and diffusion
d. none of the above

10. The ___________ is the minimum energy required to dislodge an electron from its covalent bond.

a.barrier potential
b. bandgap energy
c. potential energy
d. diffusion energy

11. Under a high reverse bias voltage, pn pn junctions break down, conducting a very high current. Depending
on the structure and doping levels of the device, ____________ breakdown may occur.

a. Zener
b. Avalanche
c. Drift
d. answers a or b

12. For proper operation, the____________________ is forward-biased and the _____________________ is

reverse-biased.

a. base-emitter junction, collector-emitter junction

b. base-emitter junction, base-collector junction
c. collector-base junction, base-emitter junction
d. collector-emitter junction, collector-base junction

13. The ________________ of the bipolar transistor consists of an exponential voltage-dependent current
source tied between the collector and emitter, and a diode (accounting for the base current) tied between
the base and emitter.

a. r-paramter model
b. h-parameter model
c. small signal-model
d. large-signal model

14. The ______ stage provides a moderate voltage gain, a moderate input impedance, and a moderate output
impedance.

a. common-drain
b. common-collector
c. common-base
d. common-emmiter

15. The ___________ provides a voltage gain less than unity, a high input impedance, and a low output
impedance, serving as a good voltage buffer

a. emitter follower
b. common base
c. common emitter
d. common source

16. A measure of the small-signal performance of voltage-dependent current sources is the _____________
defined as the change in the output current divided by the change in the input voltage.

a. impedance
b. conductance
c. transconductance
d. reluctance
 17. For what value of ID is gm equal to 0.5 gm0?

a. 0 mA
b. 0.25 IDSS
c. 0.5 IDSS
d. IDSS

18. Which of the following transistor has depletion and enhancement types?

a. BJT
b. JFET
c. MOSFET
d. Diode

19. The region to the left of the pinch-off locus is referred to as the _____ region.

a. saturation
b. cut-off
c. ohmic
d. None of the above

20. The drain current will always be one-fourth of IDSS as long as the gate-to-source voltage is _____ the
pinch-off value.

a. one-fourth
b. one-half
c. three-fourths
d. None of the above

21. It is the insulating layer of _____ in the MOSFET construction that accounts for the very desirable high input
impedance of the device.

a. SiO
b. GaAs
c. SiO2
d. HCl

22. How many terminals can a MOSFET have?

a. 2
b. 3
c. 4
d. 3 or 4

23. Which of the following FETs has the lowest input impedance?
a. JFET
b. DMOSFET
c. EMOSFET
d. None of the above

24. How many orbiting electrons does the germanium atom have?

a. 4
b. 14
c. 32
d. 11

25. One eV is equal to _____ J.

a. 6.02 E23
b. 1.6 E–19
c. 6.25 E18
d. 1.66 E–24

26. What unit is used to represent the level of a diode forward current?

a. pA
b. nA
c. A
d. mA

27. Calculate the power dissipation of a diode having ID = 40 mA.

a. 28 mW
b. 28 W
c. 280 mW
d. undefined

SOLUTION:
PD = VD x ID = 0.7V x 40 mA = 28 mW

28. What does a high resistance reading in both forward- and reverse-bias directions indicate?

a. A good diode
b. An open diode
c. A shorted diode
d. A defective ohmmeter

29. At what region of operation is the base-emitter junction forward biased and the base-collector junction reverse
biased?

a. Saturation
b. Linear or Active
c. Cut-off
d. None of the above

30. For the BJT to operate in the saturation region, the base-emitter junction must be _____-biased and the base-
collector junction must be _____-biased.

a. forward, forward
b. forward, reverse
c. reverse, reverse
d. reverse, forward

31. Which of the following voltages must have a negative level (value) in any NPN bias circuit?

a. VBE
b. VCE
c. VBC
d. None of the above

32. Which of the following is referred to as the reverse transfer voltage ratio?
a. hi
b. hr
c. hf
d. ho
33. The _____ model suffers from being limited to a particular set of operating conditions if it is to be considered
accurate.

a. hybrid
b. re
c. Thevenin
d. None of the above

34. What is the unit of the parameter ho of a BJT?

a. Volt
b. Siemen
c. Ohm
d. Unitless

35. What is the typical value of the current gain of a common-base configuration?

a. Less than 1
b. Between 1 and 50
c. Between `100 and 200
d. Undefined

36. What does the negative sign in the voltage gain of the common-emitter fixed-bias configuration indicate?

a. The output and input voltages are 180º out of phase.

b. Gain is smaller than 1.
c. Gain is larger than 1.
d. None of the above

37. The _____ configuration is frequently used for impedance matching.

a. fixed bias
b. voltage-divider bias
c. emitter-follower
d. collector feedback