KSP2907A

KSP2907A

General Purpose Transistor

• Collector-Emitter Voltage: VCEO= 60V
• Collector Power Dissipation: PC (max)=625mW
• Refer to KSP2907 for graphs

1 TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -600 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -10µA, IE=0 -60 V
BVCEO * Collector Emitter Breakdown Voltage IC= -10mA, IB=0 -60 V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -50V, IE=0 -10 nA
hFE DC Current Gain IC= -0.1mA, VCE= -10V 75
VCE= -10V, IC= -1mA, 100
VCE= -10V , IC= -10mA 100
VCE= -10V, *IC= -150mA 100 300
VCE= -10V, *IC= -500mA 50
VCE (sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA -0.4 V
IC= -500mA, IB= -50mA -1.6 V
VBE (sat) Base Emitter Saturation Voltage IC= -150mA, IB= -15mA -1.3 V
IC= -500mA, IB= -50mA -2.6 V
Cob Output Capacitance VCB= -10V, IE=0 8 pF
f=1MHz
fT * Current Gain Bandwidth Product IC= -50mA, VCE= -20V 200 MHz
f=100MHz
tON Turn On Time VCC= -30V, IC= -150mA 45 ns
IB1= -15mA
tOFF Turn Off Time VCC= -6V, IC= -150mA 100 ns
IB1=IB2= -15mA
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
* Also available as and PN2907

©2002 Fairchild Semiconductor Corporation Rev. A2, February 2002

 KSP2907A
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 -10
VCE = -10V

IC = 10 IB
hFE, DC CURRENT GAIN

-1 VBE(sat)

100

-0.1

VCE(sat)

10 -0.01
-1 -10 -100 -1000 -1 -10 -100 -1000

IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

100 1000
CURRENT GAIN BANDWIDTH PRODUCT

IE = 0
f = 1MHz VCE = -20V
Cob [pF], CAPACITANCE

10
fT[MHz],

100

0.1 10
-1 -10 -100 -1000
-1 -10 -100

VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, February 2002

 KSP2907A
Package Demensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, February 2002

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™ FAST® OPTOLOGIC™ SMART START™ VCX™

Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench® SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOS™ LittleFET™ QS™ TruTranslation™
EnSigna™ MicroFET™ QT Optoelectronics™ TinyLogic™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. H4