SUP/SUB85N10-10

New Product Vishay Siliconix

N-Channel 100-V (D-S) 175C MOSFET


  
V(BR)DSS (V) rDS(on) (
) ID (A)
0.0105 @ VGS = 10 V
100 85 a
0.012 @ VGS = 4.5 V

D
TO-220AB

TO-263

DRAIN connected to TAB

G D S
Top View
G D S S
SUB85N10-10
Top View
SUP85N10-10 N-Channel MOSFET

         


Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage VGS
20 V

TC = 25C 85a
Continuous Drain Current (TJ = 175C)
175 C) ID
TC = 125C 60a
A
Pulsed Drain Current IDM 240
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
TC = 25C (TO-220AB and TO-263) 250c
Maximum Power Dissipationb PD W
TA = 25C (TO-263)d 3.75
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C

    

Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 C/W

Junction-to-Case RthJC 0.6

Notes
a. Package limited.
b. Duty cycle  1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).

Document Number: 71141 www.vishay.com
FaxBack 408-970-5600

S-00172—Rev. A, 14-Feb-00 2-1
SUP/SUB85N10-10
Vishay Siliconix New Product


      
 
 


Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 100
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = 80 V, VGS = 0 V 1
Zero
Z Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 80 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 80 V, VGS = 0 V, TJ = 175C 250
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0085 0.0105

VGS = 4.5 V, ID = 20 A 0.0010 0.012

D i S
Drain-Source O S
On-State R i
Resistance a rDS(on) W
VGS = 10 V, ID = 30 A, TJ = 125C 0.017
VGS = 10 V, ID = 30 A, TJ = 175C 0.022
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S

Dynamicb
Input Capacitance Ciss 6550
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 665 pF
F
Reverse Transfer Capacitance Crss 265
Total Gate Chargec Qg 105 160
Gate-Source Chargec Qgs VDS = 50 V,
V VGS = 10 V
V, ID = 85 A 17 nC
C
Gate-Drain Chargec Qgd 23
Turn-On Delay Timec td(on) 12 25
Rise Timec tr VDD = 50 V
V,, RL = 0 6W
0.6 90 135
ns
Turn-Off Delay Timec td(off) ID ^ 85 A,
A VGEN = 10 V V, RG = 2 5W
2.5 55 85
Fall Timec tf 130 195

Source-Drain Diode Ratings and Characteristics (TC = 25C)b

Continuous Current IS 85
A
Pulsed Current ISM 240

Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.0 1.5 V

Reverse Recovery Time trr 85 140 ns
Peak Reverse Recovery Current IRM(REC) IF = 50 A
A, di/d
di/dt = 100 A/
A/ms 4.5 7 A
Reverse Recovery Charge Qrr 0.17 0.35 mC

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

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2-2 S-00172—Rev. A, 14-Feb-00
 SUP/SUB85N10-10
New Product Vishay Siliconix

 
       
Output Characteristics Transfer Characteristics
250 200
VGS = 10 thru 6 V

200 5V
150
I D – Drain Current (A)

I D – Drain Current (A)

150

100

100

TC = 125C
50
4V
50
25C
–55C
3V
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

250 0.020

TC = –55C
200
r DS(on) – On-Resistance (
)

0.015
g fs – Transconductance (S)

25C

150 VGS = 4.5 V

125C
0.010 VGS = 10 V

100

0.005
50

0 0
0 20 40 60 80 100 0 20 40 60 80 100 120

ID – Drain Current (A) ID – Drain Current (A)

Capacitance Gate Charge

10000 20

VDS = 50 V
V GS – Gate-to-Source Voltage (V)

8000 16 ID = 85 A
Ciss
C – Capacitance (pF)

6000 12

4000 8

2000 4
Crss
Coss

0 0
0 15 30 45 60 75 0 50 100 150 200

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 71141 www.vishay.com
FaxBack 408-970-5600

S-00172—Rev. A, 14-Feb-00 2-3
SUP/SUB85N10-10
Vishay Siliconix New Product

 
       
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A
2.0
r DS(on) – On-Resistance (W)

I S – Source Current (A)

(Normalized)

1.5 TJ = 150C TJ = 25C

10

1.0

0.5

0 1
–50 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2

TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)

Drain Source Breakdown vs.

Avalanche Current vs. Time Junction Temperature
1000 140

130 ID = 250 mA
100
V(BR)DSS (V)

IAV (A) @ TA = 25C

120
I Dav (a)

10
IAV (A) @ TA = 150C 110

1
100

0.1 90
–50 –25 0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
tin (Sec) TJ – Junction Temperature (C)

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FaxBack 408-970-5600 Document Number: 71141

2-4 S-00172—Rev. A, 14-Feb-00
 SUP/SUB85N10-10
New Product Vishay Siliconix



 
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 1000

80 10 ms
100
I D – Drain Current (A)

I D – Drain Current (A)

100 ms
60
Limited
10 by rDS(on)
1 ms
40 10 ms
100 ms
dc
20 1 TC = 25C
Single Pulse

0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100 1000
TC – Ambient Temperature (C) VDS – Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1

0.05
0.02
Single Pulse

0.01
10–4 10–3 10–2 10–1 1 10
Square Wave Pulse Duration (sec)

Document Number: 71141 www.vishay.com
FaxBack 408-970-5600

S-00172—Rev. A, 14-Feb-00 2-5
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