Sra TN hen erent flo inthe crt the potential of terminal ¥ will be Ge Dee ae * z ‘Sol. The Ge diode conducts for a p.d of 0.3V, thee thecureatpasesthroughitandthe ‘Sidiode do not conduct. Hence the potential! | 5 L 2 8 a As TT 3 i ier idl +10 Tio, 4 a the orig tne . eo s at I= 20ma, V = -Pee ‘Sol. Inthe situation given, germanium diode wilh stuation m ry 2 AP (A= 0.10 /10mA = 100. cntrsbecase pele rae s ison de by Fromihecune at prt too tieewren rf ya-l0V,1=—1ud ilopen ecu The equal erat atin peforesty #107 /1414 = 10x 1070 av yssaind maximum voltage across AB in 4 ‘he circuit shown in Fig. Assume that 1 diode is ideal ay | te a ‘gi As the diode is treated ideal, its forward resistance R, = 2er0 .Itactsas short circuit, - So 1040 is in parallel with 15kQ2and the S268 =r, totalresstance=R, = 640+ 5KOQ= 11k. Pan Y-20V. Current em from the bttery is De pot. 2 2.72ma % R ® ina Fag Mey =2.TmAx 64O.=16320 ‘WIR Find the voluage ¥., inthe circuit shown in figure. The potential barrier for Geis 03V and for Si is 0.7 V‘semicondeutor diode, > In half wave. we efficieney is R er (where Fr) > forward resistance ofdiode and R, > loud resistance.) {W's maximum value is 40.6%, > Maximum current 1 opt tt ruximamvoiage) > Meande curt La» * eas > Value ofrigpl factor =1.21 > Therigple fequency equal tothe frequency famed emt > Thevahicofde component inout pu vokage sks thant a. Efficiency of a half-wave rectifier (Formula derivation) %® Inbualfwave rectification we need atleast one ; oad [owe] | | Vere 7 ad, denote diode resistin, Jond resistance respectively Hence dc. power = az powering Fa 4, Forahalf-wave rectifier Im, = | Heme #, =/2%(0,+8,) » y ~ eee se wee> Infulfraverectfiation eeael inal semiondeutor diodes, > Infill waverestifer the efficiency is vanaf -Itsmaximum values Scented siueresieananst diodeand R, > lad resistance.) > Masirumeurent L age ismax imum voltage) Rey, 21, > Mean decurtent lg ==" | > aae > ale ofripple factor = 0.482 > Thenipple fequencyistwie tothe frequency ofapphed emt p ™ Temeeeteccomponee notreFiitecosiosht ers dbcrpi ead ath ORE Oi 2 haleyeleofretifed ouput. © a erged to the peak Valen ure he rate of fil of He VORAKE dey capacitor depends upon the inverse pad Form fctortisraio of 1, and 1, 8) Forhalt-wave rectification:——- ma ue sitrep-njemction dod, asquare input 1 al of 10¥ i applied as shwon At “Thenthe out put signal across R, willbe sis referred as zener voltage wn in zener diode can occ by tint process depending on the evel of doping of the diode. They are i) Zener breakdown(high level doping) i) Avalanche breakdown (low level doping) > _ Forzener breakdown, when fverse potential difference i nereased the elec fell across the depletion layer also increases and at 8 crt vale of pot dies bere or sere 2 . level of doping is high in the diode and § ‘The zener voltage for zener breakdown } ‘usually less than SV. a] al For avalanche breakdown, —_ sited nM ae eshte rhs Pace thc esa fel eros he cxpetion || aemsmcne sees nj ea vaceertinss| Seaeeenerrc sceiteet Revemieounstes | vie ny tera Se lbcobtindd during postivehalfocleonly | ronsavalanche) which finally ads tO -Sooptionis 3) acscain] Imasive crease reverse current. Te wad cy eae _ > feeietraireeree te ° Selene aa ioe a aa 00 0 @ rs 20——— eet > Symbol of zener diode = > zener diode is used as voliage regulator is ‘reat diagram 8 1 changes that Vy (1) V, remain constant. WEA: The curent in the forward bias is kent be more (nA) than the current and n> p, i Hence, the fraction AT (Le An /n would on HY tht inthe maori es MHS thay ‘bias currentis nt | factional change int mana 2 S| According to Kirchofi's first law J =1,+! fvely | 2) Opto electronic junction device input volage V, =1207; 5 e=t=l,=1410? 5x10? =9x10° 904 Photodiode Shpg: LV characteristics of photodiode for ‘_Seeatthumination intensity Z, > ,> 1). Light Emitting Light (LED) tp cells. Voc (open circuit voltage) \ | > sie emiting diode (LED) isa forward-biased -ajunction diode which emits visible light ‘shen energised > The energy of radiation emitted by LED is ‘gual to or less than the band gap of the seniconductr. > Theband width of emitted light is 100° to 5004 orn other words itis nearly (but not v TRIV characterstics of L.ED: ‘eT Short circuit current Hpoand gap( 1.010 186V) Aiphigh optical absorption (10%) iy good ectrial conductivity iv) availability ‘ofthe raw material and Wyeast ‘Transfer + resistor = Transistor > ‘Transistors are current operated solic-state the element from which most of the ind other semiconductor > Transistor has three regions known as the ‘emitter (E), base (B) and collector (C) 1) Emitters heavily doped and mediumin size. 2) Base of transistor is lightly doped and very ‘hin,= px Bae oo AsAxp= pix whe fs sais erat ‘othinpat and output. » Srier-eollctoras shown in figure “onfguraion, > iltage gain=current gain x resistance gain. * Power gain = Voltage gain x current gain. \nthis configuration collector is common (0 > Thecolectoris earthed and inputs given acT0sS ‘ese - collector and output is taken across ‘This mode is called grounded collector ¢ Corrent iran ee ane eee collector rf ‘x | Current amplification factor of common