WSP4953

Dual P-Ch MOSFET

General Description Product Summery

The WSP4953 is the highest performance

BVDSS RDSON ID
trench P-ch MOSFET with extreme high
cell density , which provide excellent -30V 60mΩ -5.3A
RDSON and gate charge for most of the
synchronous buck converter applications .
Applications
The WSP4953 meet the RoHS and Green
Product requirement with full function z High Frequency Point-of-Load Synchronous
reliability approved. Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features z Load Switch

z Advanced high cell density Trench technology SOP8 Pin Configuration

z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available

Absolute Maximum Ratings

Symbol Parameter Rating Units

VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, -VGS @ -10V -5.3 A
1
ID@TC=100℃ Continuous Drain Current, -VGS @ -10V -4.6 A
2
IDM Pulsed Drain Current -12 A
3
PD@TC=25℃ Total Power Dissipation 1.5 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-Ambient --- 85 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 36 ℃/W

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 WSP4953
Dual P-Ch MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃
VGS=-10V , ID=-3A --- 60 90
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=-4.5V , ID=-1.5A --- 90 120
VGS(th) Gate Threshold Voltage -1.0 -1.5 -2.5 V
VGS=VDS , ID =-250uA
△VGS(th) VGS(th) Temperature Coefficient --- 4.32 --- mV/℃
VDS=-24V , VGS=0V , TJ=25℃ --- --- -1
IDSS Drain-Source Leakage Current uA
VDS=-24V , VGS=0V , TJ=55℃ --- --- -5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=-5V , ID=-3A --- 5.5 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 24 48 Ω
Qg Total Gate Charge (-4.5V) --- 5.22 ---
Qgs Gate-Source Charge VDS=-20V , VGS=-4.5V , ID=-5A --- 1.25 --- nC
Qgd Gate-Drain Charge --- 2.3 ---
Td(on) Turn-On Delay Time --- 18.4 ---
Tr Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω --- 11.4 ---
ns
Td(off) Turn-Off Delay Time ID=-1A --- 39.4 ---
Tf Fall Time --- 5.2 ---
Ciss Input Capacitance --- 463 ---
Coss Output Capacitance VDS=-15V , VGS=0V , f=1MHz --- 82 --- pF
Crss Reverse Transfer Capacitance --- 68 ---

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,4
IS Continuous Source Current --- --- -5.3 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2,4 --- --- -12 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V

Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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 WSP4953
Dual P-Ch MOSFET

Typical Characteristics

12 135.0

ID= -4A
10
-ID Drain Current (A)

115.0
8 VGS=-10V

RDSON (mΩ)
VGS=-7V
6 VGS=-5V 95.0
VGS=-4.5V
4 VGS=-3V
75.0
2

0 55.0
0 0.5 1 1.5 2 2 4 6 8 10
-VDS , Drain-to-Source Voltage (V) -VGS (V)

Fig.2 On-Resistance vs. G-S Voltage

Fig.1 Typical Output Characteristics
10 10
VDS=-20V
ID=-4A
8
-VGS Gate to Source Voltage (V)

7.5
-IS Source Current(A)

5
TJ=150℃ TJ=25℃ 4

2.5
2

0 0
0 0.3 0.6 0.9 1.2 0 2.5 5 7.5 10
-VSD , Source-to-Drain Voltage (V) Fig.3 QG , Total Gate Charge (nC)

Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

1.5 2.0
Normalized On Resistance
Normalized VGS(th)

1 1.5

0.5 1.0

0 0.5
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

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 WSP4953
Dual P-Ch MOSFET

1000 100.00
F=1.0MHz

Ciss 10.00 10us

Capacitance (pF)

100us

-ID (A)
100 Coss 1.00

Crss 10ms
100ms
0.10
DC
TC=25℃
Single Pulse
10 0.01
1 5 9 13 17 21 25 0.1 1 10 100
-VDS , Drain to Source Voltage (V) -VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJA)

DUTY=0.5

0.2

0.1 0.1

0.05

0.01 P DM T ON
0.01
T

D = TON/T
SINGLE
TJpeak = TC+P DMXRθJA

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

www.winsok.tw Page 4 Dec.2014

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