Exam II ELEC 498/898 March 18, 2021 Prof Ianno

Name:______________________________

1. Conditions are established in a uniformly doped n-type bar such that:

p(x)=1E9cos( x/W) cm-3 where the bar is W in length.

a) Determine an expression for the hole current density as a function of x.

b) If the total current density is equal to the hole current density at the point x=0, determine
the electron current density as a function of x.
2. a) We have a semi-infinite bar of p-type semiconductor in steady state with G L=0, and
recombination =0. At x=0 we have a source of electrons such that

n= n0 and is constant over time. We have low level injection. Find Δn(x).

b) While the bar is not in equilibrium, we can enforce the constraint that J=0. Find the E-field
and sketch the band diagram. Show the direction of the field on the diagram. Note: Ef is
constant.
3.a) We uniformly illuminate a bar of silicon where
τn= τp = 5 x 10-6 s, n= 1E17 cm-3, and GL=1E19 EHP/cm2-s
Calculate the total hole concentration 7 microseconds after the light is shut off.