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    35 views13 pages

    BTS432E2 Profet Siemens

    Uploaded by

    musah ayuba

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
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    of 13
    SIEMENS Smart Highside Power Switch Features * Load dump and reverse battery protection’) * Clamp of negative voltage at output * Short-cireuit protection * Current limitation * Thermal shutdown * Diagnostic feedback * Open load detection in ON-state + CMOS compatible input * Electrostatic discharge (ESD) protection * Loss of ground and loss of Vop protection2) * Overvoltage protection * Undervoltage and overvoltage shutdown with auto-restart and hysteresis Application * ZC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads + All types of resistive, inductive and capacitve loads PROFET® BTS 432 E2 Product Summary Vioad dump 30 Vv Vop-Vour Avalanche Clamp 58 Vv Vbb (operation) 45.42 V Vob (reverse) 320 =«V Ron 38 =mQ Iisep) 440A fuser) 35 A ALISO) 1 A * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smert SIPMOS= chip on chip technology. Fully protected by embedded protection functions. Voltage Charge pump| sentor Level shifter Rectifier ono ‘sonal GND » 2 Semiconductor Group 1 Open load detection Umit for unciamped ind. loads remperature Load short circuit detection PROFET | Lead OND No external components required, reverse load current limited by connected load, Additional external diode required for charged inductive loads 04.96 SIEMENS BTS 432 E2 Pin Symbol Function 1 GND = | Logic ground 2 IN |_| Input, activates the power switch in case of logical high signal 3 Vbb +] Positive power supply voltage, the tab is shorted to this pin 4 st S | Diagnostic feedback, low on failure 5 ouT 0] Output to the load (Load, L) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values | Unit Supply voltage (overvoltage protection see page 3) Vow 63 Vv Load dump protection Visseounp = Ua + Ve, Ux=13.5V | V,9 665; V R= 2Q, R= 1.1 Q, te 200 ms, IN= low or high Load current (Short-circuit current, see page 4) I selflimited [A Operating temperature range T, -40..+150| °C Storage temperature range Tog -85 ...#150 Power dissipation (DC) Pao 125| W Inductive load switch-off energy dissipation, single pulse J=150 °C: | Ens 17| J Electrostatic discharge capability (ESD) Veso 20]; kV (Human Body Model) Input voltage (DC) Vin 05.76, V Current through input pin (DC) In 0} ma Current through status pin (DC) Isr 25.0 see intemal circuit diagrams page 6 Thermal resistance chip - case: | Ric =1] KW junction - ambient (free air): | Risa S75 SMD version, device on peb*): stbd 2) Vg is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 4) Device on 50mm*50mm"1.Smm epoxy PCB FR4 with 6cm? (one layer, 70m thick) copper area for Vig, connection. PCB is vertical without blown air. Semiconductor Group 2 SIEMENS BTS 432 E2 Electrical Characteristics Parameter and Conditions at T) = 25°C, Vyp = 12 V unless otherwise specified Symbol Values min typ. max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) L=2A 125 °C: T= 150°C: Ron 30 55 38 70 ma Nominal load current (pin 3 to 5) ISO Proposal: Von =0.5V, T= 85°C ‘huisoy 1 Output current (pin 5) while GND disconnected or GND pulled up, Vin= 0, see diagram page 7, T=-40...4150°C ‘Aienohighy mA Turn-on time Semiconductor Group 3 SIEMENS BTS 432 E2 Parameter and Conditions Symbol Values Unit at T) = 25 °C, Vbb = 12 V unless otherwise specified min| typ |_max Protection Functions initial peak short circuit current limit (pin 3 to 5), | Aiscp) (max 400 «s if Von > Vonsc) ) -| = A ~| 44 2a] = Repetitive short circuit current limit huscr) T.= Th (see timing diagrams, page 10) 22| 35] -| A Short circuit shutdown delay after input pos. slope Von> Voniscy T; =-40..+150°C: | taysc) 80 -| 400| xs min value valid only, if input "low" time exceeds 30 «s Output clamp (inductive load switch of four = Veo - Vonycuy = 30 mA Voructs -| 58| -| v Seon circuit shutdown detection voltage (pin 3 to 5) Vonuscy -| 83/ =| Vv Thermal overload trip temperature Th wo; | -| Thermal hysteresis ai =| 10 K Inductive load switch-off energy dissipation”, Eas -| = J T stat = 150 °C, single pulse Vbo = 12 V: | Eicaai2 43 Von = 24 Vi | Eicadza 1.0 Reverse battery (pin 3 to 1) Veo = = 32 Vv Integrated resistor in Vbo line Roo ee) Diagnostic Characteristics Open load detection current ov 2 900] mA {on-condition) 2 750 8) Short circuit current limit for max. duration of 400 ~s, prior to shutdown (see ty(sc) page 4) 3) While demagnetizing load inductance, dissipated energy in PROFET is Eas= J Voncu)* it) dt, approx Ease My" L* B (peal ), soe diagram page 8 12) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current Ioyp of = 0.3 A at V;,,=-32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse Icyp can be reduced by an additional extemal GND-resistor (150 Q). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7), Semiconductor Group 4 SIEMENS BTS 432 E2 Parameter and Conditions Symbol Values Unit at T) = 25°C, Vbp = 12V unless otherwise specified min] typ [max Input and Status Feedback") Input turn-on threshold voltage | _/— Vincr=) 18] -|] 24] V T, =-40..4150°C: Input turn-off threshold voltage \_ Viner tof =| =| Vv T, =-40..4150°C: Input threshold hysteresis A Viwey =| 05 =| Vv Off state input current (pin 2) Vin = 0.4 V2 [inven 1 =| 30, «A On state input current (pin 2) Vin = 3.5V: | Anon io; 25{ 50/ “A Status invalid after positive input slope ist se) 80] 200] 400] =s (short circuit) Tj=-40 ... +10°C: Status invalid after positive input slope ts 360| =| 1600[ =s (open load) T=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, Is Vsrerighy 54] 61| -| Vv ST low voltage _7j =-40...#150°C, Isr Vsrom -| =| 04 1) Ifa ground resistor Ronp is used, add the voltage drop across this resistor. Semiconductor Group 5 SIEMENS BTS 432 E2 Truth Table Input- | Output | Status level | level | 432 | 432 | 432 o2_| ear2 | 2 Normal v C H 4 i ‘operation 4 H H H H ‘Open load my H H U H H L L H Shorteireuit [| L L H H H to GND L L L L Short circuit | L 4 H # v t0 Vb 4 HK | Hw | Har | ‘Overtem- L L v L L perature H L L L L Under- L L La H ve voltage 4 L Ls) H Lt) ‘Overvoltage |b L v H c H L L H L T= "Low" Level H="High" Level Terms Status output ESD-Zener diode: 6.1 V typ., max 5 mA; RT(ON) < 260 0 at 1.6 mA, ESD zener diodes are not designed for continuous current Short Circuit detection Fault Condition: Vox > 6.3 V typ.; IN high y ZDi1 6.1 Vtyp., ESD zener diodes are not designed for Logie sretecusat ' continuous current [Lae 12) Power Transistor off, high impedance 13) Low resistance short Vey to output may be detected by no-load-detection 14) No current sink capability during undervoltage shutdown Semiconductor Group 6 SIEMENS BTS 432 E2 Inductive and overvoltage output clamp Von clamped to 58 V typ Overvolt. and reverse batt. protection 1] Logie Row Dsinei ono Rb = 120 O typ., Vz +Roo"40 mA = 67 V typ., add RGN, RIN, RST for extended protection Open-load detection ON-state diagnostic condition: Voy < Ron * ly high Me Semiconductor Group GND disconnect Mob PRoFET OUT] ‘Any kind of load. In case of Input=high is Vour= Vin Vines). Duo to Vea >0, no Ver = low signal avaible GND disconnect with GND pull up PROFET OUT] ‘Any kind of load. If Vano> Vai - Vir) davico stays off Duo to Vaan >0, no Vsr = low signal avaiable Vbb disconnect with charged inductive load our] SIEMENS BTS 432 E2 Inductive Load switch-off energy dissipation Ebb ~ PROFET OUT en Energy dissipated in PROFET Eas = Epo + Et - Er. Fhoad < EL. EL = 19" LR Semiconductor Group 8 SIEMENS BTS 432 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type ers [43202] 432€2| 432F2] 43212 Logic version ofelrlt Overtemperature protection 7) >150 °C, latch function*s*® x x | x 7)>150 °C, with auto-restart on cooling x Short-circuit to GND protection switches off when Von>8.3 V typ.15) x x x x (hen frst turned on after approx. 200s) Open load detection in OFF-state with sensing current 30 t Yop | : Your ,, ST open drain Figure 2a: Switching a lamp, jin \st our BTS 432 E2 Figure 2b: Switching an inductive load Vv OUT hoout ff \ ‘tthe to constant of load is too large, pen-load satus may Figure 3a: Turn on into short circuit Semiconductor Group 10 a(S) 2ppr0% 200xs if Vin -Vaur > 83 Viyp SIEMENS Figure 3b: Turn on into overload. IN Your ” 7 eutront peak approx. 20 3 Semiconductor Group "1 BTS 432 E2 Figure 4a: Overtemperature: Reset if 7;

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