Chapter 1 Diode

សាកលវិទ្យាល័យ អន្តរជាតិ
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ADVANCE
មុខវជាា ELECTRONIC
DEVICE
ឌីយត
៉ូ
មេម ៀនទី ១
Diode
លោកគ្រូ ល ឿង យាន្
គ្រូបច្ចេកច្េសជំនាញច្េឡិចគ្រូនិច
វេាស្ថ
ិ ា នពហុបច្ចេកច្េសភូមភា
ិ រច្រច្ោសសនកំពរ
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Learning outcome
•Become aware of the general characteristics of three important
semiconductor materials: Si, Ge, GaAs
•Understand conduction using electron and hole theory.
•Be able to describe the difference between n - and p -type materials.
•Develop a clear understanding of the basic operation and characteristics of
a diode in the no-bias, forward-bias, and reverse-bias regions.
•Be able to calculate the dc, ac, and average ac resistance of a diode from
the characteristics.
•Understand the impact of an equivalent circuit whether it is ideal or
practical.
•Become familiar with the operation and characteristics of a Zener diode
and light- emitting diode.
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CONTENT
1. Introduction 10. Revers recovery times
2. Semiconductor 11. Diode specification Sheets
3. Covalent Bonding and Intrinsic 12. Diode Notation
Materials 13. Diode Testing
4. Energy Levels 14. Zener Diodes
5. N-type and p-type materials 15. Light Emitting Diodes
6. Semiconductor Diode
7. Resistance Levels
8. Diodes Equivalent Circuits
9. Transitions and diffusion
capacitance
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1. INTRODUCTION 0976727000
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What is Semiconductor?
What is Diode?
History of IC?
IC in technology?
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ិ រច្រច្ោសសនកំពរ Gmail chhoeungyean901@gmail.com
2. SEMICONDUCTOR 0976727000
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Semiconductor are a special class of elements having a conductivity

between that of a good conductor and that of an insulator.
Semiconductor are:
Ge(Germanium) and Si(Silicon) have a repetitive crystal structure.
GaAs(Gallium Arsenide) CdS (Cadmium sulfide) and GaN(Gallium
Nitride) are compound semiconductor have two or more semiconductor
material of different atomic structures.
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Ge(Germanium)
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Ge(Germanium)
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Si(Silicon)
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GaAs
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3. Covalent Bonding and Intrinsic Materials 0976727000
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Ge(Germanium)
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Si(Silicon)
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4. Energy Levels 0976727000
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The farther an electron is from the nucleus, the higher is the energy state, and any
electron that has left its parent atom has a higher energy state than any electron in the
atomic structure
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An electron in the valence band of silicon must absorb more energy than one in the
valence band of germanium to become a free carrier. Similarly, an electron in the valence
band of gallium arsenide must gain more energy than one in silicon or germanium to
enter the conduction band.
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5. n -TYPE AND p -TYPE MATERIALS 0976727000
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A semiconductor material that has been subjected to the doping process is called an
extrinsic material.
n -Type Material
Diffused impurities with five valence electrons are called donor atoms.
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A semiconductor material that has been subjected to the doping process is called an
extrinsic material.
p -Type Material
The diffused impurities with three valence electrons are called acceptor atoms.
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6. SEMICONDUCTOR DIODE 0976727000
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No Applied Bias ( V 0 V)
This region of uncovered positive and negative ions is called the depletion region
due to the “depletion” of free carriers in the region.
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No Applied Bias ( V = 0 V)
In the absence of an applied bias across a semiconductor diode, the net flow of charge
in one direction is zero
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Reverse-Bias Condition ( V D < 0 V)
The current that exists under reverse-bias conditions is called the reverse
saturation current and is represented by I s .
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Forward-Bias Condition ( V D > 0 V)
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Forward-Bias Condition ( V D > 0 V)
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7. IDEAL VERSUS PRACTICAL 0976727000
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The semiconductor diode behaves in a manner similar to a mechanical switch in that it

can control whether current will flow between its two terminals.
The semiconductor diode is different from a mechanical switch in the sense that when
the switch is closed it will only permit current to flow in one direction.
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At any current level on the vertical line, the voltage across the ideal diode is 0 V and
the resistance is 0 .
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Because the current is 0 mA anywhere on the horizontal line, the resistance is

considered to be infinite ohms (an open-circuit) at any point on the axis.
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8. RESISTANCE LEVELS 0976727000
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DC or Static Resistance
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AC or Dynamic Resistance
The dc resistance of a diode is independent of
the shape of the characteristic in the region
surrounding the point of interest
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In general, therefore, the lower the Q-point of operation

(smaller current or lower voltage), the higher is the ac
resistance.
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9. DIODE EQUIVALENT CIRCUITS 0976727000
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An equivalent circuit is a combination of elements properly chosen to best represent the

actual terminal characteristics of a device or system in a particular operating region.
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Simplified Equivalent Circuit
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Ideal Equivalent Circuit
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9. TRANSITION AND DIFFUSION CAPACITANCE 0976727000
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Every electronic or electrical device is frequency sensitive.
1
𝑋𝐶 =
2𝜋𝑓𝐶
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the transition capacitance is the predominant capacitive

effect in the reverse-bias
region whereas the diffusion capacitance is the
predominant capacitive effect in the
forward-bias region.
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10. REVERSE RECOVERY TIME 0976727000
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10. REVERSE RECOVERY TIME 0976727000
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12. DIODE SPECIFICATION SHEETS 0976727000
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Chapter 1 Diode

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សាកលវិទ្យាល័យ អន្តរជាតិ

Semiconductor are a special class of elements having a conductivity

Reverse-Bias Condition ( V D < 0 V)

Forward-Bias Condition ( V D > 0 V)

Forward-Bias Condition ( V D > 0 V)

The semiconductor diode behaves in a manner similar to a mechanical switch in that it

Because the current is 0 mA anywhere on the horizontal line, the resistance is

In general, therefore, the lower the Q-point of operation

An equivalent circuit is a combination of elements properly chosen to best represent the

Simplified Equivalent Circuit

Ideal Equivalent Circuit

Every electronic or electrical device is frequency sensitive.

the transition capacitance is the predominant capacitive

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