STGW50H65DFB2-4

Datasheet

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT

in a TO247-4 package

Features
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
4
2
3 • Tight parameter distribution
1 • Low thermal resistance
TO247-4 • Positive VCE(sat) temperature coefficient

C(1, TAB)
• Excellent switching performance thanks to the extra driving kelvin pin

Applications
G(4)
• Welding
K(3)
• Power factor correction
• UPS
E(2) • Solar inverters
NG4K3E2C1_TAB
• Chargers

Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current
values, as well as in terms of reduced switching energy. A very fast soft recovery
diode is co-packaged in antiparallel with the IGBT. The result is a product specifically
designed to maximize efficiency for a wide range of fast applications.

Product status link

STGW50H65DFB2-4

Product summary

Order code STGW50H65DFB2-4

Marking G50H65DFB2
Package TO247-4
Packing Tube

DS13420 - Rev 1 - August 2020 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGW50H65DFB2-4
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 650 V

Continuous collector current at TC = 25 °C 86

IC
Continuous collector current at TC = 100 °C 53 A

ICP (1)(2)
Pulsed collector current 150

Gate-emitter voltage ±20

VGE V
Transient gate-emitter voltage (tp ≤ 10 μs) ±30

Continuous forward current at TC = 25 °C 60

IF
Continuous forward current at TC = 100 °C 38 A

IFP(1) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 150

PTOT Total power dissipation at TC = 25 °C 272 W

TSTG Storage temperature range -55 to 150

°C
TJ Operating junction temperature range -55 to 175

1. Defined by design, not subject to production test.

2. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

Thermal resistance junction-case IGBT 0.55

RthJC
Thermal resistance junction-case diode 1.14 °C/W
RthJA Thermal resistance junction-ambient 50

DS13420 - Rev 1 page 2/15

 STGW50H65DFB2-4
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 1 mA 650 V
voltage
VGE = 15 V, IC = 50 A 1.55 2

VGE = 15 V, IC = 50 A,
Collector-emitter saturation 1.8
VCE(sat) TJ = 125 °C V
voltage
VGE = 15 V, IC = 50 A,
1.9
TJ = 175 °C

IF = 50 A 1.85 2.45

VF Forward on-voltage IF = 50 A, TJ = 125 °C 1.65 V

IF = 50 A, TJ = 175 °C 1.45

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 2928 -

VCE = 25 V, f = 1 MHz,
Coes Output capacitance - 162 - pF
VGE = 0 V
Cres Reverse transfer capacitance - 78 -

Qg Total gate charge VCC = 520 V, IC = 50 A, - 151 -

Qge Gate-emitter charge VGE = 0 to 15 V - 30 - nC

(see Figure 29. Gate charge test
Qgc Gate-collector charge - 63 -
circuit)

DS13420 - Rev 1 page 3/15

 STGW50H65DFB2-4
Electrical characteristics

Table 5. Switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 18 - ns

tr Current rise time VCC = 400 V, IC = 50 A, - 20 - ns

Eon (1)
Turn-on switching energy VGK = 15 V, RG(on) = 12 Ω, - 629 - μJ
RG(off) = 6.8 Ω
td(off) Turn-off delay time - 128 - ns
(see Figure 28. Test circuit for
tf Current fall time inductive load switching) - 32 - ns

Eoff (2)
Turn-off switching energy - 478 - µJ

td(on) Turn-on delay time - 12 - ns

VCC = 400 V, IC = 50 A,
tr Current rise time - 22 - ns
VGK = 15 V, RG(on) = 12 Ω,
Eon (1)
Turn-on switching energy - 1215 - μJ
RG(off) = 6.8 Ω
td(off) Turn-off delay time TJ = 175 °C - 161 - ns

tf Current fall time (see Figure 28. Test circuit for - 86 - ns

inductive load switching)
Eoff (2) Turn-off switching energy - 983 - µJ

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 92 - ns

Qrr Reverse recovery charge IF = 50 A, VR = 400 V, - 673 - nC

Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 20.9 - A

Peak rate of fall of reverse (see Figure 31. Diode reverse

dIrr/dt - 675 - A/µs
recovery current during tb recovery waveform)

Err Reverse recovery energy - 138 - µJ

trr Reverse recovery time - 209 - ns

IF = 50 A, VR = 400 V,
Qrr Reverse recovery charge - 3500 - nC
VGE = 15 V, di/dt = 1000 A/µs,
Irrm Reverse recovery current - 45.8 - A
TJ = 175 °C
Peak rate of fall of reverse
dIrr/dt (see Figure 31. Diode reverse - 600 - A/µs
recovery current during tb
recovery waveform)
Err Reverse recovery energy - 841 - µJ

DS13420 - Rev 1 page 4/15

 STGW50H65DFB2-4
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature

PTOT GADG041220191034PDT IC GADG041220191035CCT

(W) ≥ ≤ (A) VGE ≥ 15 V, TJ ≤ 175 °C

250
80

200
60
150
40
100

20
50

0 0
25 75 125 175 TC (°C) 25 75 125 175 TC (°C)

Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)

IC GADG041220191035OC25 IC GADG041220191036OC175
(A) (A)
VGE = 11 V VGE = 13 V VGE = 11 V
125 125
VGE = 13 V
VGE = 15 V
100 100
VGE = 15 V VGE = 9 V
VGE = 9 V
75 75

50 50

25 25
VGE = 7 V
VGE = 7 V
0 0
0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)

Figure 5. VCE(sat) vs junction temperature Figure 6. VCE(sat) vs collector current

VCE(SAT) GADG041220191036VCET VCE(SAT) GADG041220191037VCEC

(V) VGE = 15 V (V)
VGE = 15 V
2.6 3.2
IC = 100 A
2.8 TJ = 175 °C
2.3
2.4 TJ = 25 °C
2.0
IC = 50 A
2.0
1.7 TJ = -40 °C
1.6
1.4
IC = 25 A 1.2

1.1 0.8
0.8 0.4
-50 0 50 100 150 TJ (°C) 0 25 50 75 100 125 IC (A)

DS13420 - Rev 1 page 5/15

 STGW50H65DFB2-4
Electrical characteristics (curves)

Figure 7. Collector current vs switching frequency Figure 8. Forward bias safe operating area

IC GADG051220191302CCS IC IGBT061220191241FSOA
(A) (A)

80

10 2
60 tp = 1 µs
TC = 100 °C

TC = 80 °C tp = 10 µs
40
10 1
tp = 100 µs
20 Single pulse, TC = 25 °C,
Rectangular current shape TJ ≤ 175 °C, VGE = 15 V tp = 1 ms
(duty cycle = 0.5, VCC = 400 V,
0 RG = 4.7 Ω, VGE = 0/15 V , Tj = 175 °C 10 0
10 0 10 1 10 2 f (kHz) 10 0 10 1 10 2 VCE (V)

Figure 9. Transfer characteristics Figure 10. Diode VF vs forward current

IC GADG041220191038TCH VF IGBT230216EWF6GDVF
(A) (V) TJ = -40 °C
VCE = 6 V
125 2.3

100 2.0
TJ = 25 °C

75 1.7

TJ = 175 °C
50 1.4
Tj = 175 °C

25 1.1
Tj = 25 °C

0 0.8
4 6 8 10 VGE (V) 20 30 40 50 60 70 80 IF (A)

Figure 11. Normalized VGE(th) vs junction temperature Figure 12. Normalized V(BR)CES vs junction temperature

VGE(th) GADG300120191024NVGE V(BR)CES GADG300120191024NVBR

(norm.) (norm.)

1.1 IC = 1 mA
VCE = VGE 1.08
IC = 1 mA
1.0
1.04
0.9
1.00
0.8

0.96
0.7

0.6 0.92
-50 0 50 100 150 TJ (°C) -50 0 50 100 150 TJ (°C)

DS13420 - Rev 1 page 6/15

 STGW50H65DFB2-4
Electrical characteristics (curves)

Figure 13. Capacitance variations Figure 14. Gate charge vs gate-emitter voltage

C GADG041220191039CVR VGE GADG091220190907GCGE

(pF) (V) VCC = 520 V, IC = 50 A, IG = 12 mA

Cies 15

10 3 12

10 2 6
f = 1 MHz Coes
3
Cres
10 1 0
10 -1 10 0 10 1 10 2 VCE (V) 0 40 80 120 160 Qg (nC)

Figure 15. Switching energy vs collector current Figure 16. Switching energy vs temperature

E GADG220720201127SLC E GADG220720201127SLT
(mJ) VCC = 400 V, RG(on) = 12 Ω, (mJ) VCC = 400 V, IC= 50 A, RG(on) = 12 Ω,
4.0 RG(off) = 6.8 Ω, VGK = 15 V, TJ=175 ℃ RG(off) = 6.8 Ω, VGK = 15 V
3.5 2.0
Etot
3.0 Etot
1.6
2.5

2.0 Eon 1.2

1.5 Eon

1.0 Eoff 0.8

Eoff
0.5
0.0 0.4
0 20 40 60 80 IC (A) 0 50 100 150 TJ (°C)

Figure 17. Switching energy vs collector emitter voltage

Figure 18. Switching energy vs gate resistance
E GADG220720201129SLV
(mJ) IC = 50 A, RG(on) = 12 Ω, RG(off) = 6.8 Ω, E GADG220720201130SLG
(mJ) IC = 50 A, VCC= 400 V,
3.0 VGK = 15 V, TJ= 175 ℃ VGK = 15 V, TJ=175 ℃
4.0
2.6 3.5
Etot
2.2 3.0

1.8 2.5
Eon
1.4 2.0

1.5
1.0
Eoff
1.0
0.6
0.5
0.2 0 10 20 30 40 RG (Ω)
150 250 350 450 VCE (V)

DS13420 - Rev 1 page 7/15

 STGW50H65DFB2-4
Electrical characteristics (curves)

Figure 19. Switching times vs collector current Figure 20. Switching times vs gate resistance

t GADG220720201130STC t GADG220720201131STR
(ns) VCC = 400 V, RG(on) = 12 Ω, (ns) td(off)
RG(off) = 6.8 Ω, VGK = 15 V, TJ=175 ℃
td(off)
tf tf
10 2 10 2

tr
td(on)
tr
10 1 td(on) 10 1

VCC = 400 V, VGK = 15 V, IC= 50 A

10 0 10 0 TJ=175 ℃
0 20 40 60 80 IC (A) 0 10 20 30 40 RG (Ω)

Figure 21. Reverse recovery current vs diode current

Figure 22. Reverse recovery time vs diode current slope
slope
trr GADG051220191300RRT
Irrm GADG051220191300RRC
(ns)
VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C
(A)
55
240
50

45
220
40

35
200
30

25
180
20 0 500 1000 1500 2000 2500 3000 di/dt(A/µs)
0 500 1000 1500 2000 2500 3000 di/dt(A/μs)

Figure 23. Reverse recovery charge vs diode current Figure 24. Reverse recovery energy vs diode current
slope slope

Qrr GADG051220191301RRQ Err GADG051220191301RRE

(μC) VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C (mJ) VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C

4.0 1.0

3.5 0.8

3.0 0.6

2.5 0.4

2.0 0.2
0 500 1000 1500 2000 2500 3000 di/dt(A/µs) 0 500 1000 1500 2000 2500 3000 di/dt(A/µs)

DS13420 - Rev 1 page 8/15

 STGW50H65DFB2-4
Electrical characteristics (curves)

Figure 25. Thermal impedance for IGBT

ZthTO2T_B
K
δ=0.5

0.2

0.1 0.05
-1
10
0.02
Zth=k Rthj-c
0.01 δ=tp/t

Single pulse tp

t
-2
10 -5 -4 -2 -1
tp (s)
-3
10 10 10 10 10

Figure 26. Thermal impedance for diode

DS13420 - Rev 1 page 9/15

 STGW50H65DFB2-4
Test circuits

3 Test circuits

Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit

A A
C
L=100 μH
G

E B
B
3.3 1000 VCC
C μF μF

G D.U.T

RG
K E

GND1 GND2
(signal ground) (power ground) HB650_4_leads GADG030820201115SA

Figure 29. Switching waveform Figure 30. Diode reverse recovery waveform

90%

VG 10%

90%

VCE tr(Voff)
10%
tcross
10
90%

IC td(off)
10%
td(on) tf
tr(Ion)
ton toff

AM01506v1 GADG140820170937SA

DS13420 - Rev 1 page 10/15

 STGW50H65DFB2-4
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO247-4 package information

Figure 31. TO247-4 package outline

8405626_2

DS13420 - Rev 1 page 11/15

 STGW50H65DFB2-4
TO247-4 package information

Table 7. TO247-4 mechanical data

mm
Dim.
Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.29
b1 1.15 1.20 1.25
b2 0 0.20
c 0.59 0.66
c1 0.58 0.60 0.62
D 20.90 21.00 21.10
D1 16.25 16.55 16.85
D2 1.05 1.20 1.35
D3 24.97 25.12 25.27
E 15.70 15.80 15.90
E1 13.10 13.30 13.50
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 2.44 2.54 2.64
e1 4.98 5.08 5.18
L 19.80 19.92 20.10
P 3.50 3.60 3.70
P1 7.40
P2 2.40 2.50 2.60
Q 5.60 6.00
S 6.15
T 9.80 10.20
U 6.00 6.40

DS13420 - Rev 1 page 12/15

 STGW50H65DFB2-4

Revision history

Table 8. Document revision history

Date Version Changes

03-Aug-2020 1 First release.

DS13420 - Rev 1 page 13/15

 STGW50H65DFB2-4
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

DS13420 - Rev 1 page 14/15

 STGW50H65DFB2-4

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DS13420 - Rev 1 page 15/15