MITSUBISHI IGBT MODULES

CM75TU-24F
HIGH POWER SWITCHING USE

CM75TU-24F

¡IC ..................................................................... 75A

¡VCES . ....................................................... 1200V
¡Insulated Type
¡6-elements in a pack

APPLICATION
General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

107
4–φ5.5
90 ±0.25
23 MOUNTING HOLES (4)
12 12
3.75

CM
N P
17

11 21.7 11 21.7 11 14.4

GuP G E G E G E GuN
EuP EuN
GvN
80 ±0.25

48.5

GvP
102

EvP EvN
GwP GwN
0.5

EwP G E G E G E
EwN
3.75

U V W

12 12 12 +1
23 23 0.8 29 –0.5
5–M5NUTS
11 21.7 11 21.7 11
Tc measured point 2.8 Tc measured point
4
P
7.1

8.1

GUP GVP GWP

RTC RTC RTC

26

LABEL E UP
U
EVP
V
EWP
W

G UN GVN GWN

RTC RTC RTC

E UN EVN EWN
N

CIRCUIT DIAGRAM

Sep.2000

http://store.iiic.cc/
 MITSUBISHI IGBT MODULES

CM75TU-24F
HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C)

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage G-E Short 1200 V
VGES Gate-emitter voltage C-E Short ±20 V
IC TC = 25°C 75 A
Collector current
ICM Pulse (Note 2) 150
IE (Note 1) TC = 25°C 75
Emitter current A
IEM (Note 1) Pulse (Note 2) 150
PC (Note 3) Maximum collector dissipation TC = 25°C 450 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Main terminal to base plate, AC 1 min. 2500 V
Main Terminal M5 2.5 ~ 3.5 N•m
— Torque strength
Mounting holes M5 2.5 ~ 3.5 N•m
— Weight Typical value 680 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA

VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 5 6 7 V

IGES Gate leakage current VGE = VCES, VCE = 0V — — 20 µA

Tj = 25°C — 1.8 2.4
VCE(sat) Collector-emitter saturation voltage IC = 75A, VGE = 15V V
Tj = 125°C — 1.9 —
Cies Input capacitance — — 29
VCE = 10V
Coes Output capacitance — — 1.3 nF
VGE = 0V
Cres Reverse transfer capacitance — — 0.75
QG Total gate charge VCC = 600V, I C = 75A, VGE = 15V — 825 — nC
td(on) Turn-on delay time — — 100
tr Turn-on rise time VCC = 600V, IC = 75A — — 50
ns
td(off) Turn-off delay time VGE1 = VGE2 = 15V — — 400
tf Turn-off fall time RG = 4.2Ω, Inductive load switching operation — — 300
trr (Note 1) Reverse recovery time IE = 75A — — 150 ns
Qrr (Note 1) Reverse recovery charge — 3.1 — µC
VEC(Note 1) Emitter-collector voltage IE = 75A, VGE = 0V — — 3.2 V
Rth(j-c)Q IGBT part (1/6 module) — — 0.28
Thermal resistance*1
Rth(j-c)R FWDi part (1/6 module) — — 0.47
°C/W
Rth(c-f) Contact thermal resistance Case to fin, Thermal compoundapplied*2 (1/6 module) — 0.09 —
Rth(j-c’)Q Thermal resistance Tc measured point is just under the chips — — 0.22*3
RG External gate resistance 4.2 — 42 Ω
Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.

Sep.2000

http://store.iiic.cc/
 MITSUBISHI IGBT MODULES

CM75TU-24F
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
150 3

SATURATION VOLTAGE VCE (sat) (V)

15
Tj=25°C 11 VGE = 15V
COLLECTOR CURRENT IC (A)

125 10 2.5

COLLECTOR-EMITTER
VGE=20V 9.5
9
100 2

75 1.5
8.5
50 1

8 0.5 Tj = 25°C
25
Tj = 125°C

0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 50 100 150

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
5 103
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 7 Tj = 25°C
5
EMITTER CURRENT IE (A)

3
4
COLLECTOR-EMITTER

102
3 7
5
IC = 150A 3
2
2 IC = 75A
101
IC = 30A 7
1 5
3
2
0 100
6 8 10 12 14 16 18 20 0.5 1 1.5 2 2.5 3 3.5

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE–VCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
102 103
7 tf
CAPACITANCE Cies, Coes, Cres (nF)

7
5 5
3 Cies 3
td(off)
SWITCHING TIMES (ns)

2 2
101 102
7 7
5 5 td(on)
3 3
2 2
Conditions: tr
100 101 VCC = 600V
7
5 Coes
7
5 VGE = ±15V
Cres RG = 4.2Ω
3 3
2 VGE = 0V 2 Tj = 125°C
Inductive load
10–1 –1 100 0
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 101 2 3 5 7 102

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Sep.2000

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 MITSUBISHI IGBT MODULES

CM75TU-24F
HIGH POWER SWITCHING USE

REVERSE RECOVERY CHARACTERISTICS TRANSIENT THERMAL

OF FREE-WHEEL DIODE IMPEDANCE CHARACTERISTICS
(TYPICAL) (IGBT part & FWDi part)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

102 101

THERMAL IMPEDANCE Zth ( j–c) (°C/W)

7 IGBT part:
REVERSE RECOVERY TIME trr (ns)

7 5 Per unit base = Rth(j–c) = 0.28°C/W

3 FWDi part:

NORMALIZED TRANSIENT
5 Irr 2 Per unit base = Rth(j–c) = 0.47°C/W
3 trr 100
7
2 5
3 3
2 2
101 10–1 10–1
7 7
7 5 5
5 Conditions: 3 3
VCC = 600V 2 2
3 VGE = ±15V 10–2 10–2
RG = 4.2Ω 7 7
2 5 5
Tj = 25°C 3 Single Pulse 3
Inductive load 2 TC = 25°C 2
100 0 10–3 10–3
10 2 3 5 7 101 2 3 5 7 102 10–5 2 3 5 710–4 2 3 5 7 10–3

EMITTER CURRENT IE (A) TMIE (s)

GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 75A
GATE-EMITTER VOLTAGE VGE (V)

18
16 VCC = 400V
14
VCC = 600V
12
10
8
6
4
2
0
0 200 400 600 800 1000 1200

GATE CHARGE QG (nC)

Sep.2000

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