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CM1000HA-24H MitsubishiElectricSemiconductor
CM1000HA-24H MitsubishiElectricSemiconductor
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
U - M4 THD
R (2 TYP.)
P
E
G
B A
S - M8 THD
C (2 TYP.)
Description:
G
Mitsubishi IGBT Modules are de-
E C
J
signed for use in switching appli-
cations. Each module consists of
one IGBT in a single configuration
Q with a reverse-connected super-
L
fast recovery free-wheel diode. All
T - DIA. H F N
components and interconnects are
(4 TYP.)
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
D agement.
E
Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
E C u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
G
E
Applications:
u AC Motor Control
Outline Drawing and Circuit Diagram u Motion/Servo Control
u UPS
Dimensions Inches Millimeters Dimensions Inches Millimeters u Welding Power Supplies
A 5.12 130.0 L 0.79 20.0
Ordering Information:
B 4.33±0.01 110.0±0.25 M 0.77 19.5 Example: Select the complete
C 1.840 46.75 N 0.75 19.0 part module number you desire
D 1.73+0.04/–0.02 44.0+1.0/–0.5 P 0.61 15.6
from the table below -i.e.
CM1000HA-24H is a 1200V
E 1.46+0.04/–0.02 37.0+1.0/–0.5 Q 0.51 13.0 (VCES), 1000 Ampere Single IGBT
F 1.42 36.0 R 0.35 9.0 Module.
G 1.25 31.8 S M8 Metric M8
Type Current Rating VCES
H 1.18 30.0 T 0.26 Dia. Dia. 6.5 Amperes Volts (x 50)
J 1.10 28.0 U M4 Metric M4 CM 1000 24
K 1.08 27.5
Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
2000 2000 5
VGE = 20 15 12 VGE = 15V
(V) VCE = 10V
Tj = 25°C
1600 Tj = 25°C 1600 4
Tj = 125°C
11
VCE(sat), (VOLTS)
IC, (AMPERES)
IC, (AMPERES)
1200 1200 3
10
800 800 2
9
400 400 1
8 7 Tj = 25°C
Tj = 125°C
0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 400 800 1200 1600 2000
VCE, (VOLTS) VGE, (VOLTS) IC, (AMPERES)
10 104 103
Tj = 25°C
Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)
8
Cies
COLLECTOR-EMITTER
103 102
Cies, Coes, Cres, (nF)
IE, (AMPERES)
6
IC = 2000A
Coes
4 IC = 1000A
102 101
2 Cres
IC = 400A VGE = 0V
0 101 100
0 4 8 12 16 20 1.0 1.5 2.0 2.5 3.0 3.5 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) VEC, (VOLTS) VCE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS GATE CHARGE, VGE
(TYPICAL) (TYPICAL) (TYPICAL)
16
VCC = 400V
td(off)
SWITCHING TIME, (ns)
t rr 12
Irr, (AMPERES)
td(on)
t rr, (ns)
tf 102 102
Irr
8
102 tr
VCC = 600V
VGE = ±15V 4
RG = 3.3 Ω di/dt = -2000A/µsec
Tj = 125°C Tj = 25°C
Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 0.022°C/W Zth = Rth • (NORMALIZED VALUE)
Per Unit Base = R th(j-c) = 0.05°C/W
Zth = Rth • (NORMALIZED VALUE)
100 100
Sep.1998