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Lec-13 - Memory Circuits
Lec-13 - Memory Circuits
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Advantages:
1. Shorter wires within blocks
2. Block address activates only 1 block => power savings
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Advantages:
1. Shorter wires within blocks
2. Block address activates only 1 block => power savings
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0.0
0 100 200 300 400 500 600 700
time (ps)
1.0
bit
Ex: A = 0, A_b = 1 word
SRAM Sizing
High bitlines must not overpower inverters during reads
But low bitlines must write new value into cell
bit bit_b
word
weak
med med
A A_b
strong
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➢ 1T DRAM requires a sense amplifier for each bit line, due to charge redistribution
read-out
➢ The read-out of the 1T DRAM cell is destructive; read and refresh operations are
necessary for correct operation.
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X : means connection
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4. EEPROM
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NOR flash is faster to read than NAND flash, but it's also more expensive.
NAND has a higher memory capacity than NOR.
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NOR FLASH memories are very fast to program and read. Erasure through tunneling is
much slower. However, this kind of array suffers from low density due to the same
reason that impacts NOR ROM density the need for multiple grounds.
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