LinearL2TM IXTH30N50L2 VDSS = 500V

Power MOSFET IXTQ30N50L2 ID25 = 30A

w/ Extended FBSOA IXTT30N50L2 RDS(on)  215m

D
O D
TO-268 (IXTT)
N-Channel Enhancement Mode
RGi
G O ww G

O S
S D (Tab)

TO-3P (IXTQ)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25C to 150C 500 V
VDGR TJ = 25C to 150C, RGS = 1M 500 V
G
VGSS Continuous  20 V D
VGSM Transient  30 V S
D (Tab)
ID25 TC = 25C 30 A
IDM TC = 25C, Pulse Width Limited by TJM 60 A TO-247 (IXTH)
IA TC = 25C 30 A
EAS TC = 25C 1.5 J
PD TC = 25C 400 W
G
TJ -55 ... +150  C D D (Tab)
S
TJM 150  C
Tstg -55 ... +150  C G = Gate D = Drain
TL Maximum Lead Temperature for Soldering 300 °C S = Source Tab = Drain
TSOLD Plastic Body for 10s 260 °C
Md Mounting Torque (TO-247&TO-3P) 1.13 / 10 Nm/lb.in
Features
Weight TO-268 4.0 g
TO-3P 5.5 g 
TO-247 6.0 g Designed for Linear Operation

International Standard Packages

Avalanche Rated

Guaranteed FBSOA at 75C
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max. Advantages

BVDSS VGS = 0V, ID = 250μA 500 V 

Easy to Mount

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V Space Savings

High Power Density
IGSS VGS = 20V, VDS = 0V           100 nA
Applications
IDSS VDS = VDSS, VGS = 0V 50 A
TJ = 125C 300 A 
Solid State Circuit Breakers
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 215 m 
Soft Start Controls

Linear Amplifiers

Programmable Loads

Current Regulators

© 2014 IXYS CORPORATION, All Rights Reserved DS99957B (02/14)

 IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
Symbol Test Conditions Characteristic Values TO-3P Outline
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 9 12 15 S
Ciss 8100 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 530 pF
Crss 115 pF
RGi Integrated Gate Input Resistor 3.5 
td(on) 35 ns
Resistive Switching Times
tr 117 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off) 94 ns
RG = 0 (External)
tf 40 ns
Qg(on) 240 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 58 nC
Qgd 135 nC
RthJC 0.31 °C/W
RthCS (TO-247&TO-3P) 0.25 °C/W

Safe Operating Area Specification

Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 400V, ID = 0.5A, TC = 75°C, Tp = 2s 200 W

Source-Drain Diode
TO-247 Outline
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 30 A
ISM Repetitive, Pulse Width Limited by TJM 120 A P
1 2 3

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr IF = IS, -di/dt = 100A/s, 500 ns
VR = 100V, VGS = 0V

Note 1: Pulse test, t  300s, duty cycle, d 2%. e

Terminals: 1 - Gate 2 - Drain

3 - Source

TO-268 Outline Dim. Millimeter Inches

Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
Terminals: 1 - Gate 2,4 - Drain L1 4.50 .177
3 - Source P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

30 80
VGS = 20V VGS = 20V
12V 70 14V
10V 12V
24
9V
60

10V

I D - Amperes
I D - Amperes

50
18
8V
40
9V
12 7V 30
8V

20
6 7V
6V
10
6V
5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 5 10 15 20 25 30
VDS - Volts VDS - Volts

Fig. 4. RDS(on) Normalized to ID = 15A Value vs.

Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature
30 2.8
VGS = 20V
VGS = 10V
12V
10V 2.4
24
9V
RDS(on) - Normalized

8V 2.0
I D - Amperes

18 I D = 30A

1.6 I D = 15A
7V
12
1.2
6V
6
0.8
5V

0 0.4
0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Fig. 6. Maximum Drain Current vs.
Drain Current Case Temperature
2.8 35

VGS = 10V
30
2.4 TJ = 125ºC
25
RDS(on) - Normalized

I D - Amperes

2.0
20

15
1.6

10
TJ = 25ºC
1.2
5

0.8 0
0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade

© 2014 IXYS CORPORATION, All Rights Reserved

 IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2

Fig. 7. Input Admittance Fig. 8. Transconductance

50 30

27 TJ = - 40ºC

40 24

21 25ºC
TJ = 125ºC

g f s - Siemens
I D - Amperes

30 25ºC 18
- 40ºC 125ºC
15

20 12

10 6

0 0
3.5 4.5 5.5 6.5 7.5 8.5 9.5 0 5 10 15 20 25 30 35 40 45 50
VGS - Volts I D - Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge
90 16

VDS = 250V
80 14
I D = 15A
70 I G = 10mA
12

60
I S - Amperes

10
VGS - Volts

50
8
40

TJ = 125ºC 6
30
TJ = 25ºC 4
20

10 2

0 0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 100 150 200 250 300 350
VSD - Volts QG - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance

100,000 1

f = 1 MHz
Capacitance - PicoFarads

Ciss
10,000
Z (th)JC - ºC / W

1,000 Coss 0.1

100
Crss

10 0.01
0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 10
VDS - Volts Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area
@ TC = 25ºC @ TC = 75ºC
100 100

RDS(on) Limit RDS(on) Limit

25µs

100µs 25µs

10 10 100µs
I D - Amperes

I D - Amperes
1ms

1ms

10ms
10ms
1 1

100ms
DC 100ms
DC
TJ = 150ºC TJ = 150ºC
Single Pulse Single Pulse

0.1 0.1
10 100 1000 10 100 1000
VDS - Volts VDS - Volts

© 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: T_30N50L2(7R)4-23-08-A

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