Professional Documents
Culture Documents
RE1 - Noise - Nonlinearity - Low - Noi
RE1 - Noise - Nonlinearity - Low - Noi
521326S
NOISE, NONLINEARITY
AND LOW NOISE AMPLIFIERS
Aarno Pärssinen
CWC-RT
Additional material
12.11.2018 2
Content
• Noise (Pozar: pp. 496-510, Razavi: pp.35-46)
• Nonlinearity & dynamic range (Pozar: pp. 511-523, Razavi:
pp. 14-32)
• IC’s for RF and mmW (extra material)
• Low Noise Amplifier (LNA) (Razavi: pp. 255-296)
• Matching with lumped elements
• LNA topologies
• Common-Source
• Common-Gate
• Inductive source degeneration
• Design procedure
Radio Engineering 1 - 521326S
12.11.2018 3
Questions
• Signal dynamics in radio receivers and transmitters (small and
large signals)?
• How we can understand noise?
• Where noise comes from?
• How to analyze noise in system level?
• What is linearity?
• What does it do for the signal (power and frequency
response)?
• What is a low noise amplifier?
• How it can be analyzed in transistor level?
Two concepts for analysis (that are both correct in their domains)
Noise
Deterioration of SNR due to internal or external noise
sources
• Linear response
• Weak signals impacted
Nonlinearity
Deterioration of SNR due to presence of a large signal
• Other radio/frequency channel in receiver
• Generated signal/modulated carrier in transmitter
FRONT END
AMPLIFIER
DIGITAL
VOLTAGE
0o DIG.
o CONTROLLED MODEMI
MODEM
90
OSCILLATOR ETUPÄÄ
RF BAND D
SELECTION FILTER A
FRONT END
DIGITAL
0o DIG.
90o
MODEMI
MODEM
ETUPÄÄ
LOW NOISE A
D
AMPLIFIER A
D
AMPLIFIER
DIGITAL CONTROL
FOR RF
Evolution of integrated circuits for RF
BT SoC
~20mm2 WLAN/BT/FM SoC
1µm CMOS ~40mm2
RX & TX GSM SoC HSPA/EDGE&APE SoC
53mm2
28 GHz TRX
29mm2
HSPA with PA
65nm CMOS
Pager GSM
18mm2 LTE/3G BS
5mm2 6mm2 WCDMA RX+ADC
60 GHz TRX 45nm CMOS
12mm2
12mm2 49 mm2
28 GHz TRX
165mm2
G S
S D
typically
n+ n+ 250…750µm
p-substrate
p-substraatti
G S
S D
typically
n+ n+ 250…750µm
p-substrate
p-substraatti
𝜇𝑛 𝐶𝑜𝑥 𝑊 2
𝑉𝑔𝑠 > 𝑉𝑡ℎ -> 𝑉𝑑𝑠 > 𝑉𝑔𝑠 − 𝑉𝑡ℎ -> 𝐼𝑑 = 𝑉𝑔𝑠 − 𝑉𝑡ℎ saturation
2 𝐿
2
𝑊 𝑉𝑑𝑠
𝑉𝑔𝑠 > 𝑉𝑡ℎ -> 𝑉𝑑𝑠 < 𝑉𝑔𝑠 − 𝑉𝑡ℎ -> 𝐼𝑑 = 𝜇𝑛 𝐶𝑜𝑥 𝐿 𝑉𝑔𝑠 − 𝑉𝑡ℎ 𝑉𝑑𝑠 − 2
linear or triode region
12.11.2018 12
saturation
MOSFET G
subs
Id
Vgs3 G S
triode
Vgs2 S D
Vgs1
typically
n+ n+ 250…750µm
cutoff
Vds
p-substrate
p-substraatti
𝜇𝑛 𝐶𝑜𝑥 𝑊 2
𝑉𝑔𝑠 > 𝑉𝑡ℎ -> 𝑉𝑑𝑠 > 𝑉𝑔𝑠 − 𝑉𝑡ℎ -> 𝐼𝑑 = 𝑉𝑔𝑠 − 𝑉𝑡ℎ saturation
2 𝐿
2
𝑊 𝑉𝑑𝑠
𝑉𝑔𝑠 > 𝑉𝑡ℎ -> 𝑉𝑑𝑠 < 𝑉𝑔𝑠 − 𝑉𝑡ℎ -> 𝐼𝑑 = 𝜇𝑛 𝐶𝑜𝑥 𝐿 𝑉𝑔𝑠 − 𝑉𝑡ℎ 𝑉𝑑𝑠 − 2
linear or triode region
12.11.2018 13
RF transistor G
subs
S
Simplified small signal equivalent circuit:
rg cgd G
G D S D
+
vgs cgs ro Cdb
- gmvgs n+ n+
p-substrate
p-substraatti
S
𝜕𝐼 𝑊
𝑔𝑚 = 𝜕𝑉𝑑 -> 𝜇𝑛 𝐶𝑜𝑥 𝑉𝑔𝑠 − 𝑉𝑡ℎ for square law devices
𝑔𝑠 𝐿
12.11.2018 14
RF transistor G
subs
S
Simplified small signal equivalent circuit:
rg cgd
id
G D 20 log10
+ iin
vgs cgs ro Cdb
- gmvgs
20dB/dec
S
Frequency, where short circuit current gain is unity (=1) fT f
𝑔
𝑓𝑇 = 2𝜋 𝐶 𝑚+𝐶
𝑔𝑠 𝑔𝑑
FRONT END
AMPLIFIER
DIGITAL
VOLTAGE
0o DIG.
o CONTROLLED MODEMI
MODEM
90
OSCILLATOR ETUPÄÄ
RF BAND D
SELECTION FILTER A
FRONT END
DIGITAL
0o DIG.
90o
MODEMI
MODEM
ETUPÄÄ
LOW NOISE A
D
AMPLIFIER A
D
AMPLIFIER
DIGITAL CONTROL
FOR RF
12.11.2018 16
Amplifier
Simplification
Matching of a common-source amplifier iin for hand calculations
+
vgs cgs gmvgs
-
vin
Ls (gm+sCgs)vgs
Lg
Ls 𝑣𝑖𝑛 𝑣𝑔𝑠 + 𝑔𝑚 + 𝑠𝐶𝑔𝑠 𝑣𝑔𝑠 ∙ 𝑠𝐿𝑠 𝑔𝑚 𝐿𝑠 1
𝑍𝑖𝑛 = = = + + 𝑠𝐿𝑠
𝑖𝑖𝑛 𝑠𝐶𝑔𝑠 𝑣𝑔𝑠 𝐶𝑔𝑠 𝑠𝐶𝑔𝑠
12.11.2018 17
Amplifier
When power matched one can calculate equivalent for the whole
input stage Gm (not the same as transistor gm)
Voltage gain can be calculated at resonance frequency as:
𝐴𝑣 = 𝐺𝑚 𝑅𝐿
ZL
WHY?
Gm
12.11.2018 18