SAHIN PHYSICS

Subject : Phy Paper Set : 1

Standard : 12 Semiconductor and Digital Circuit Date : 26-08-2023
Total Mark : 200 Time : 0H:0M

 
Physics - Section A - MCQ 
 (A) 1 (B) 2
(C) 3 (D) 0
(1) The diode used in the circuit shown in the figure has a constant voltage (5) If the voltage between the terminals A and B is 17 V and zener break-
drop of 0.5 V at all currents and a maximum power rating of 100 milliwatts. down voltage is 9 V , then the potential voltage across R is.......V
What should be the value of the resistor R, connected in series with the
diode for obtaining maximum current.......Ω

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(A) 1.5 (B) 5

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(C) 6.67 (D) 200

(2) The combination of the gates shown will produce (A) 6 (B) 8
(C) 9 (D) 17
(6) In an n − p − n common emitter (CE) transistor the collector current
changes from 5 mA to 16 mA for the change in base current from 100 µA
and 200 µA, respectively. The current gain of transistor is
PH
(A) 110 (B) 0.9
(C) 210 (D) 9
(7) An alternating voltage of 141.4 V (rms) is applied to a vacuum diode as
shown in the figure. The maximum potential difference across the con-
denser will be......V

(A) AN D gate (B) N AN D gate

(C) OR gate (D) XOR gate
N

(3) In a given circuit diagram, a 5 V zener diode along with a series resistance
is connected across a 50 V power supply. The minimum value of the resis-
tance required, if the maximum zener current is 90 mA will be ..... Ω.
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(A) 100 (B) 200

√ √
(C) 100 2 (D) 200 2
(8) Figure shown a DC voltage regulator circuit, with a Zener diode of break-
down voltage = 6 V . If the unregulated input voltage varies between 10 V
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to 16 V , then what is the maximum Zener current ?.......mA

(A) 100 (B) 1000

(C) 500 (D) 50

(4) All the diodes are ideal. The current flowing in 2 Ω resistor connected be-
tween the diodes D1 and D2 is.......A

(A) 2.5 (B) 3.5

(C) 7.5 (D) 1.5
(9) The output of a N AN D gate is 0

1
 (A) If both inputs are 0
(15) An npn transistor operates as a common emitter amplifier with a power
(B) If one input is 0 and the other input is 1 gain of 106 . The input circuit resistance is 100 Ω and the output load resis-
(C) If both inputs are 1 tance is 10 KΩ. The common emitter current gain ' β ' will be............. (Round
(D) Either if both inputs are 1 or if one of the inputs is 1 and the other 0 off to the Nearest Integer)
(10) In the given circuit The current through the battery is........A (A) 400 (B) 100
(C) 121 (D) 169

(16) Regarding a semiconductor which one of the following is wrong

(A) There are no free electrons at room temperature

(B) There are no free electrons at 0K
(C) The number of free electrons increases with rise of temperature
(D) The charge carriers are electrons and holes
(17) Which one is reverse-biased

(A) (B)

(A) 0.5 (B) 1

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(C) 1.5 (D) 2
(11) In a common base transistor circuit, the current gain is 0.98. On changing
emitter current by 5.00 mA, the change in collector current is ......... mA (D)
(C)

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(A) 0.196 (B) 2.45
(C) 4.9 (D) 5.1
(12) Given below are two statements:
Statement I : P N junction diodes can be used to function as transistor,
simply by connecting two diodes, back to back, which acts as the base ter-
minal. (18) An npn transistor operates as a common emitter amplifier, with a power

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Statement II : In the study of transistor, the amplification factor β indi- gain of 60 dB. The input circuit resistance Is 100 Ω and the output load
cates ratio of the collector current to the base current. resistance is 10 k Ω. the common emitter current gain β is
In the light of the above statements, choose the correct answer from the (A) 6 × 102 (B) 102
options given below :
(C) 60 (D) 104
(A) Statement I is false but Statement II is true
(B) Both Statement I and Statement II are true (19) A common emitter amplifier has a voltage gain of 50 , an input impedance
of 100 Ω and an output impedance of 200 Ω. The power gain of the am-
(C) Both Statement I and Statement II are false
plifier is
PH
(D) Statement I is true but Statement II is false
(A) 1000 (B) 1250
(13) Current in the circuit will be
(C) 100 (D) 5000

(20) The given transistor operates in saturation region then what should the be
value of VBB (in V olt)
(Rout = 200Ω, Rin = 100kΩ,VcC = 3volt, VBE = 0.7volt, VGE =
0, β = 200)
N

(A) 5
40
A (B) 5
50
A
(C) 5
10
A (D) 5
20
A
(14) The box in the circuit below has two inputs marked V+ and V− and a single
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{
+10V if V+ > V−
output marked Vo . The output obeys Vo =
−10V if V+ < V−

(A) 4.1 (B) 7.5

(C) 8.2 (D) 6.8
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(21) The temperature coefficient of resistance of a semiconductor

(A) Is always positive

(B) Is always negative
(C) Is zero
(D) May be positive or negative or zero
(A) (B)
(22) In the following common emitter circuit if β = 100, VCE = 7V, VBE =
Negligible RC = 2kΩ then IB =?....mA

(C)
(D)

(A) 0.01 (B) 0.04

(C) 0.02 (D) 0.03
2
(23) In P − N junction, avalanche current flows in circuit when biasing is
(A) (B)

(A) Forward (B) Reverse

(C) Zero (D) Excess

(24) In connection with the circuit drawn below, the value of current flowing
through 2 kΩ resistor is ............. ×10−4 A

(D)
(C)

(A) 30 (B) 15
(C) 25 (D) 12

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(25) P − type semiconductor is formed when

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A. As impurity is mixed in Si
B.Al impurity is mixed in Si
C.B impurity is mixed in Ge
D.P impurity is mixed in Ge
(29) P −type semiconductors are made by adding impurity element
(A) A and C (B) A and D (A) As (B) P

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(C) B and C (D) B and D (C) B (D) Bi
(30) The truth table for the followng logic circuit is ...... .

(26) The following figure shows a logic gate circuit with two inputs A and B
and the output C. The voltage waveforms of A, B and C are as shown be-
low. The logic circuit gate is
PH
(A)
A B Y
0 0 0
0 1 1
1 0 1
1 1 0
(B)
N

A B Y
0 0 1
0 1 0
1 0 0
1 1 1
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(C)
A B Y
0 0 1
0 1 0
1 0 1
(A) OR gate (B) AN D gate 1 1 0
(C) N AN D gate (D) N OR gate
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(D)
A B Y
0 0 0
0 1 1
(27) In the diagram, the input is across the terminals A and C and the output is
1 0 0
across the terminals B and D, then the output is
1 1 1
(31) Which of the following gates will have an output of 1

(A) (B)

(D)
(C)

(A) Zero (B) Same as input

(C) Full wave rectifier (D) Half wave rectifier

(32) In the study of transistor as an amplifier, if α = IIC and β = IC

IB
where
E
(28) Characteristic curve of ideal p − n diode is Ic , Ib and Ie are the collector, base and emitter currents, then
3
 (C) Low and ϕ should be high
(A) β = 1−α
α
(B) β = α
1−α (D) Low and ϕshould be high
(C) β = α
1+α
(D) β = 1+α
α (43) The variation of anode current in a triode corresponding to a change in grid
(33) A transistor is operated in CE configuration at Vcc = 2V such that a potential at three different values of the plate potential is shown in the di-
change in base current from 100 µA to 200 µA produces a change in the agram. The mutual conductance of the triode is.........mmho
collector current from 9mA to 16.5mA. The value of current gain, β is .........
(A) 45 (B) 50
(C) 60 (D) 75
(34) An N −P −N transistor in a common emitter mode is used as a simple volt-
age amplifier with a collector current of 4 mA . The terminal of a 8 V bat-
tery is connected to the collector through a load resistance RL and to the
base through a resistance RB .The collector-emitter voltage VCE = 4 V ,
base-emitter voltage VBE = 0.6 V and base current amplification factor
βd.c. = 100 . Calculate the values of RL and RB
(A) RL = 1 kΩ, RB = 185 kΩ
(B) RL = 2 kΩ, RB = 150 kΩ
(A) 2.5 (B) 5
(C) RL = 1 kΩ, RB = 240 kΩ (C) 7.5 (D) 10

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(D) RL = 3 kΩ, RB = 185 kΩ
(44) A potential difference of 2.5 V is applied across the faces of a germa-
(35) The amplification factor of a triode is 18 and its plate resistance is 8 × 103 . nium crystal plate. The face area of the crystal is 1 cm2 and its thickness is
A load resistance of 104 Ω is connected in the plate circuit. The voltage gain 1.0 mm. The free electron concentration in germanium is 2 × 1019 m−3

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will be and the electron and holes mobilities are 0.33 m2 /s and 0.17 m2 /V s re-
(A) 30 (B) 20 spectively. The current across the plate will be .......... A
(C) 10 (D) 1 (A) 0.2 (B) 0.4
(C) 0.6 (D) 0.8
(36) In P − N junction, the barrier potential offers resistance to
(A) Free electrons in N region and holes in P region (45) At room temperature, a P − type semiconductor has

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(B) Free electrons in P region and holes in N region (A) Large number of holes and few electrons
(C) Only free electrons in N region (B) Large number of free electrons and few holes
(D) Only holes in P region (C) Equal number of free electrons and holes

(37) The correct relation between α (ratio of collector current to emitter cur- (D) No electrons or holes
rent) and β (ratio of collector current to base current) of a transistor is : (46) To get output '1' at R, for the given logic gate circuit the input values must
(A) β = α
(B) α = β be
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1+α 1−α
(C) β = 1
1−α
(D) α = β
1+β

(38) The relation between Ip and Vp for a triode is Ip = (0.125Vp − 7.5) mA

Keeping the grid potential constant at 1V, the value of rp will be.....kΩ
(A) 5 (B) 4
(C) 2 (D) 8
(39) The device that can act as a complete electronic circuit is

(A) junction diode (B) integrated circuit

(A) X = 0, Y = 1 (B) X = 1, Y = 1
N

(C) junction transistor (D) zener diode

(C) X = 1, Y = 0 (D) X = 0, Y = 0
(40) A transistor having α = 0.99 is used in a common base amplifier. If the load
(47) Figure shows 2N AN D gates followed by a N OR gate. The system is
resistance is 4.5 kΩ and the dynamic resistance of the emitter junction is
equivalent to one gate G with inputs X, Y, Z and output R. What is G
50 Ω the voltage gain of the amplifier will be
?
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(A) 79.1 (B) 89.1

(C) 78.2 (D) 450
(41) For the forward biased diode characteristics shown in the figure, the dy-
namic resistance at ID = 3 mA will be ..... Ω
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(A) OR (B) N AN D
(C) XOR (D) AN D
(48) In a P − N junction diode if P region is heavily doped than n region then
the depletion layer is
(A) Greater in P region
(B) Greater in N region
(C) Equal in both region
(D) No depletion layer is formed in this case
(49) What is the voltage gain in a common emitter amplifier, where input resis-
tance is 3 Ω and load resistance 24 Ω, β = 0.6 ?
(A) 8.4 (B) 4.8
(A) 25 (B) 30 (C) 2.4 (D) 480
(C) 35 (D) 40 (50) Indium impurity in germanium makes
(42) In a diode valve the cathode temperature must be (ϕ = work function) (A) N − type (B) P − type
(A) High and ϕshould be high (C) Insulator (D) Intrinsic
(B) High and ϕ should be low