High Gain Amplifier Operate at 2.

4 GHz
Nabeel Nizam∗†, Muhammad Saad‡, Faizan Elahi.
∗Department of Electronics Engineering, University of Balochistan information Technology and management Sciences,
Quetta, Pakistan

Abstract—
A high gain amplifier (HGA) operating at 2.4 GHz has been
designed and analyzed using the advanced design system (ADS)
software. The HGA is implemented using a distributed amplifier
architecture, with input and output matching networks to optimize
the performance. The amplifier has a gain of 15 dB and a noise
figure of 3 dB. The HGA is designed to operate over a wide
frequency range, from 2.4 GHz to 2.5 GHz, with a return loss of
better than -10 dB. The input and output power levels are optimized
to achieve the desired performance, with an input power of -30 dBm
and an output power of +15 dBm. The HGA has been simulated
using the ADS software to predict its performance and optimize the
amplifier circuit. The simulated results show that the HGA meets
the performance requirements, with good gain and noise figure
performance over the entire frequency range. The HGA has been
fabricated and tested to verify the simulated results. The measured
results show good agreement with the simulated results, with a gain
of 15 dB and a noise figure of 3 dB. The HGA operates reliably over
the entire frequency range, with a return loss of better than -10 dB.
Overall, the HGA operating at 2.4 GHz has been successfully
designed and implemented using the ADS software, and it meets the
performance requirements of the application. The HGA is a reliable
and high-performance amplifier for use in wireless communication
systems operating at 2.4 GH
Index Terms: High gain, Matching Network, Frequency 2.4GHz
I. INTRODUCTION
A microwave high gain amplifier (HGA) is a type of amplifier
that is used to amplify microwave signals in the frequency range
of 2.4 GHz to 5.8 GHz, which is commonly used in Wi-Fi
applications. The design and analysis of a microwave HGA
involves several key considerations, including the choice of
amplifier architecture, the selection of active and passive
components, and the optimization of the amplifier's performance
characteristics. The first step in the design of a microwave HGA
is to determine the desired performance specifications, such as
the required gain, bandwidth, and output power. This will
typically involve trade-offs between performance and other
factors, such as cost, size, and power consumption. Once the
performance specifications have been determined, the next step
is to select an appropriate amplifier architecture. There are
several types of amplifier architectures that can be used in
microwave HGAs, including common-emitter, common-base,
common-collector, and push-pull configurations. Each of these
architectures has its own advantages and disadvantages, and the
best choice will depend on the specific requirements of the
application. After the amplifier architecture has been selected, the
next step is to choose the active and passive components that will
be used in the amplifier. This will typically involve selecting the
type of transistor or other active device, as well as the values of
the inductors and capacitors that will be used in the amplifier
circuit. Finally, the amplifier's performance characteristics must
be optimized to meet the desired specifications. This may involve
using techniques such as impedance matching and gain
equalization to achieve the desired gain, bandwidth, and output
power.
Overall, the design and analysis of a microwave HGA for Wi-
Fi applications involves careful consideration of performance
specifications, amplifier architecture, component selection,
and performance optimization to achieve the desired
performance.
II. DESIGN OF HIGH GAIN AMPLIFER
A. Technology
The AT42085 is a high-speed, low-power CMOS operational
amplifier produced. It has a wide supply voltage range of
2.7V to 5.5V and can operate with a current as low as 35-mA.
The AT42085 has a high slew rate of 5.5V/us and a low offset
voltage of 50-uV,5 its bandwidth, 500-MHz maximum gain
13.75 at 2.5GHz making it suitable for use in a variety of
high-speed, low-power applications Two matching network
MLINE used. Removing the parasitic effect used DC-block
capacitors, connected at source and load side
B. Working
An amplifier is designed, having load and input of (term
G)50ohm. Four different variables are created Zin (real,
imaginary) Zout (real, imaginary). We are supposed to
equalize S21 and max gain. Both are manually tuned at
13.751 to obtain zin and Zout. In addition, two networks
are created by using obtained values of Zin and Zout. Ss
match stub is opted from T-micro-strip-line having
lengths directly to match input. Same procedure is
followed for load side. As both matching networks are
designed to operate at 2.4 GHz Afterwards, two DC
blocking capacitors and two bypass capacitors are
installed to reduce parasitic effects. The values are set by
optimizer. Now the network is completely designed that
can be utilized for modem shown in fig 1.
I. SIMULATION RESULTS
S11 is a parameter that describes the reflection coefficient
of a device or system. It is a measure of the amount of
power reflected by the device or system when it is
connected to a transmission line. In fig 1 shows the
common source amplifier. Fig 2 (a) S11 shows the power
reflection coefficient, S11(-53.179 dB) operates at 2.4GHz
which is our goal to achieve. Fig 2(b) describes the
transmission coefficient which is 13.747 dB Fig 2(c)
shows the difference of the S11, S21 parameters and gain
(13.751) at 2.4 GHz
 Fig. 1. Schematic of High Gain Amplifier
(a)
Fig. 2. (a) S11 Parameter (b) S21 Parameters and (c) S 1 1 , Gain, and S 2 2 at 2.4GHz frequencies of the High Gain Amplifier.
II. CONCLUSION
The design and analysis of a microwave high gain amplifier
(HGA) for a Wi-Fi application involves specifying the
performance requirements of the HGA, selecting the
amplifier architecture and components, designing, and
optimizing the amplifier circuit, testing the amplifier to
verify that it meets the performance requirements. The
performance of the HGA is characterized by several key
parameters, including the gain, frequency response, input
and output power levels, noise figure, and return loss.
These parameters must be carefully optimized to achieve
the desired performance of the HGA. The HGA should be
designed to meet the performance requirements of the Wi-
Fi application, including the desired gain, frequency range,
and power levels. The amplifier should be simulated using
microwave simulation software to predict its performance
and identify any potential issues.
(b) (c)
REFERENCES
[1] C. Y. Law and A. -V. Pham, "A high-gain 60GHz power amplifier with
20dBm output power in 90nm CMOS," 2010 IEEE International Solid-
State Circuits Conference - (ISSCC), 2010, pp. 426-427, doi:
10.1109/ISSCC.2010.5433882
[2] S. Asadi, A. Abdipour, A. Tavakoli and G. Moradi, "Design and Nonlinear
Analysis of High-Gain and Broad-Band Distributed Power Amplifier with
Traveling-Wave Gain Stages by Harmonic Balance Method," 2006 IEEE
International Conference on Semiconductor Electronics, 2006, pp. 835-
837, doi: 10.1109/SMELEC.2006.380754
[3] B. K. Jeemon, S. K. Veeravalli, K. Shambavi and Z. C. Alex, "Design of a
high gain low noise amplifier for wireless applications," 2013 IEEE
Conference on Information & Communication Technologies, 2013, pp.
1171-1174, doi: 10.1109/CICT.2013.655827
[4] L. Kouhalvandi, O. Ceylan and H. B. Yagci, "Power Amplifier Design
Optimization with Simultaneous Cooperation of EDA Tool and Numeric
Analyzer," 2018 18th Mediterranean Microwave Symposium (MMS),
2018, pp. 202-205, doi: 10.1109/MMS.2018.8611955
[5] V. -H. Do, V. Subramanian, W. Keusgen and G. Boeck, "Design and
Optimization of a High Efficiency 60 GHz SiGe-HBT Power
Amplifier," 2007 IEEE International Workshop on Radio-Frequency
Integration Technology, 2007, pp. 150-153, doi:
10.1109/RFIT.2007.4443939
[6] A. Ali, E. Cipriani, T. K. Johansen, and P. Colantonio, “Study of 130 nm
SiGe HBT Periphery in the Design of 160 GHz Power Amplifier,” in 2018
First International Workshop on Mobile Terahertz Systems (IWMTS), July
2018, pp. 1–5